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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2017-12-22 10:45 |
Kyoto | Kyoto University | Conduction mechanisms in heavily Al-doped 4H-SiC epilayers
-- Dependencies of resistivity on Al concentration and temperature -- Shinji Ozawa, Akinobu Takeshita, TAtsuya imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazuoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST)  EID2017-12 SDM2017-73 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-12 SDM2017-73 pp.5-8 |
| SDM, EID | 2017-12-22 11:00 |
Kyoto | Kyoto University | Temperature Dependent Hall Coefficient in Heavily Al-Doped 4H-SiC
-- Relationship between Inversion of Hall Coefficient and Conduction Mechanism -- Rinya Nishihata, Akinobu Takeshita, Tatsuya Imamura, Kota Takano, Kazuya Okuda, Shinji Ozawa, Atsuki Hidaka, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-13 SDM2017-74 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is essential to redu... [more] | EID2017-13 SDM2017-74 pp.9-12 |
| SDM, EID | 2017-12-22 11:15 |
Kyoto | Kyoto University | Electric properties in Al-N codoped p-type 4H-SiC epilayers
-- Comparison between temperature dependent resistivity in Al-doped and codoped samples -- Atsuki Hidaka, Akinobu Takeshita, Tatsuya Imamura, kota Takano, Kazuya Okuda, Shinji Ozawa, Hideharu Matsuura (OECU), Shiyang Ji, Kazuma Eto, Kazutoshi Kojima, Tomohisa Kato, Sadafumi Yoshida, Hajime Okumura (AIST) EID2017-14 SDM2017-75 |
To realize SiC n-channel insulated gate bipolar transistors (IGBTs) with very low on-resistance, it is required to reduc... [more] | EID2017-14 SDM2017-75 pp.13-16 |
| SDM | 2013-10-17 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Technological Trend of SiC Power Devices Takashi Shinohe (TOSHIBA) SDM2013-88 |
(To be available after the conference date) [more] | SDM2013-88 pp.1-4 |
| SDM | 2011-12-16 10:40 |
Nara | NAIST | Effects of POCl3 Annealing on SiO2/p-type 4H-SiC Interface properties Toshimitsu Takaue, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2011-134 |
We have already reported that the interface state density for n-type 4H-SiC MOS structures can be greatly reduced by POC... [more] | SDM2011-134 pp.11-15 |
| SDM | 2011-11-11 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Usages of TCAD simulation on development of semiconductor for vehicles and future ploblems Hisashi Ishimabushi, Takashi Ueta, Masaru Nagao, Kimimori Hamada (TMC) SDM2011-124 |
Recently, a good performance to think about the global environment is necessary for the vehicle. The hybrid vehicle has... [more] |
SDM2011-124 pp.51-55 |
| EE, IEE-SPC | 2011-07-28 13:25 |
Hokkaido | DC-DC Converter with SiC Devices Considering Distribution System and Control Circuit Ryosuke Ohma, Itsuo Yuzurihara, Atsushi Takayanagi (Kyosan Mfg.) EE2011-7 |
SiC is noticeable as a new generation power semiconductor device. In addition to diode, SiC-MOSFET is also released. Thi... [more] | EE2011-7 pp.7-11 |
|
| EE | 2008-07-25 13:00 |
Hokkaido | [Special Talk]
Progress in Power Semiconductor Devices Takashi Shinohe (Toshiba) EE2008-28 |
Power semiconductor devices are widely used as energy saving devices in various power electronics apparatus, such as inv... [more] | EE2008-28 pp.95-100 |
|
| SDM, ED | 2008-07-11 09:00 |
Hokkaido | Kaderu２・７ | [Invited Talk]
SiC Power Transistor and Its Application for DC/DC Converter Makoto Kitabatake (Matsushita Electric Industrial) ED2008-71 SDM2008-90 |
The SiC power transistor is demonstrated as the normally-off MOSFET with high blocking voltage of 1400V and low Ron of 6... [more] | ED2008-71 SDM2008-90 pp.165-169 |
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