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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, WPT 2022-04-15
15:15		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Distortion characteristics comparison of AlGaN-GaN HEMTs between SiC and GaN Substrates
Atsushi Moriwaki, Shinji Hara (NU) WPT2022-10 MW2022-10		 In this report, we propose a new intermodulation distortion (IMD) measurement method to evaluate the influence of curren... [more] WPT2022-10 MW2022-10
pp.35-39
ED, MW 2018-01-25
16:35		 Tokyo Kikai-Shinko-Kaikan Bldg. RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate
Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165		 (To be available after the conference date) [more] ED2017-96 MW2017-165
pp.15-18
SDM 2014-11-06
10:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Three-dimensional calculation of ion implantation to SiC substrate
Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) SDM2014-98		  [more] SDM2014-98
pp.13-18
ED, CPM, LQE 2006-10-05
14:15		 Kyoto   Study on crystal growth of AlGaN/GaN HEMT on SiC substrate
Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) 		AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to impro... [more] ED2006-155 CPM2006-92 LQE2006-59
pp.19-22
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