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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-24 13:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech)  ED2022-30 CPM2022-55 LQE2022-63 |
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] | ED2022-30 CPM2022-55 LQE2022-63 pp.33-36 |
| SDM | 2022-11-10 15:15 |
Online | Online | [Invited Talk]
Simulation of CMOS circuit and single-electron transistors for readout of spin qubits Tetsufumi Tanamoto (Teikyo Univ.) SDM2022-68 |
In this study, we consider a scalable detection circuit theoretically based on the implementation of pairs of single-ele... [more] | SDM2022-68 pp.19-22 |
| SDM | 2022-11-11 10:30 |
Online | Online | [Invited Talk]
Implementation of Compact Model of a Metal Oxide Molecule Sensor for Self-Heating Control Yohsuke Shiiki (Keio Univ.), Shintaro Nagata, Tsunaki Takahashi, Takeshi Yanagida (Univ. Tokyo), Hiroki Ishikuro (Keio Univ.) SDM2022-72 |
Metal oxide molecule sensor has notable advantages of low-cost fabrication and integration. However, the molecule sensor... [more] | SDM2022-72 pp.40-43 |
| SDM | 2022-11-11 14:00 |
Online | Online | [Invited Talk]
Evaluation and Modeling of Inversion Layer Mobility in Si-face 4H-SiC MOSFETs with Nitrided Gate Oxide Munetaka Noguchi, Hiroshi Watanabe (Mitsubishi Electric Corp.), Koji Kita (Tokyo Univ.), Kazuyasu Nishikawa (Mitsubishi Electric Corp.) SDM2022-75 |
In this study, the inversion layer mobility of the Si-face 4H-SiC MOSFET with nitrided gate oxide is examined under a wi... [more] | SDM2022-75 pp.50-54 |
| ED, IEE-BMS, IEE-MSS | 2022-08-18 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Mechanism elucidation of resistance relaxation phenomena in Pt/Nb: SrTiO3 junctions
-- Toward the application of AI devices -- Hayato Nakamura, Hiromasa Aoki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-22 |
(To be available after the conference date) [more] | ED2022-22 pp.21-24 |
| SDM | 2022-06-21 13:00 |
Aichi | Nagoya Univ. VBL3F | [Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] | SDM2022-24 pp.1-4 |
| SDM | 2022-01-31 15:30 |
Online | Online | [Invited Talk]
Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.) SDM2021-72 |
We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabr... [more] | SDM2021-72 pp.16-19 |
| SCE | 2022-01-21 15:30 |
Online | Online | Gamma-ray transition edge sensors with a thick-trilayer membrane; Thermal Property & Microwave Multiplexing Takahiro Kikuchi, Go Fujii (AIST), Ryota Hayakawa (TMU), Ryan Smith (UTokyo), Fuminori Hirayama, Yasushi Sato, Satoshi Kohjiro, Masahiro Ukibe (AIST), Masashi Ohno (UTokyo), Akira Sato, Hirotake Yamamori (AIST) SCE2021-16 |
Thick membranes of the gamma-ray transition-edge sensor (γ-TES) generally exhibit great mechanical strength and can supp... [more] | SCE2021-16 pp.22-27 |
| SDM | 2021-10-21 10:45 |
Online | Online | [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.) SDM2021-44 |
In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (SixNy) films which are widely used in t... [more] | SDM2021-44 pp.1-4 |
| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 09:30 |
Online | Online | [Invited Talk]
Analog in-memory computing in FeFET based 1T1R array for low-power edge AI applications Daisuke Saito, Toshiyuki Kobayashi, Hiroki Koga (SONY), Yusuke Shuto, Jun Okuno, Kenta Konishi (SSS), Masanori Tsukamoto, Kazunobu Ohkuri (SONY), Taku Umebayashi (SSS), Takayuki Ezaki (SONY) SDM2021-36 ICD2021-7 |
Deep neural network (DNN) inference for edge AI requires low-power operation, which can be achieved by implementing mass... [more] | SDM2021-36 ICD2021-7 pp.33-37 |
| EMM | 2021-03-05 11:00 |
Online | Online | Physical Unclonable Function Using Hartley Oscillator Ryota Soga, Hyunho Kang (NITTC) EMM2020-78 |
(To be available after the conference date) [more] | EMM2020-78 pp.63-66 |
| CPM | 2021-03-03 11:30 |
Online | Online | Fabrication of ZnO nanorods/CuO and ZnO nanorods/Cu₂O heterojunctions by Chemical bath Deposition Takuma Omoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol. Kagawa Coll.) CPM2020-64 |
Copper (II) oxide (CuO) and copper (I) oxide (Cu2O) films were grown on Au/Ti/Si(100) substrates by conventional chemica... [more] | CPM2020-64 pp.34-37 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| SCE | 2021-01-19 13:30 |
Online | Online | Thermal Conductance of Tri-layer Membranes for Multi-Pixel Gamma-Ray Transition Edge Sensors Takahiro Kikuchi, Satoshi Kohjiro, Ryota Hayakawa, Go Fujii, Fuminori Hirayama, Masahiro Ukibe (AIST), Ryan Smith, Masashi Ohno (U-Tokyo) SCE2020-18 |
We have been developing the Gamma-ray Transition Edge Sensors (TESs) which is able to achieve high energy resolution. Mu... [more] | SCE2020-18 pp.7-12 |
| OME | 2020-12-25 16:50 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of Tandem Organic Solar Cells Using MgO as a Cathode Buffer Material Formed by a Reaction of MoO3 with Mg Hiroshi Kageyama (Univ. Ryukyus) OME2020-14 |
Effect of magnesium oxide (MgO) cathode buffer layer, which was fabricated by a reaction of molybdenum oxide with therma... [more] | OME2020-14 pp.29-32 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:30 |
Online | Online | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37 |
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] | EID2020-3 SDM2020-37 pp.9-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 13:40 |
Online | Online | Synthesis of Single Crystal BaTiO3 Nanoparticles for Self-Assembly Technique Misa Yamasaki, Masaki Yamaguchi (Shibaura Inst. of Tech.) EID2020-8 SDM2020-42 |
In this study, barium titanate single crystal fine particles used for inkjet-printing method were prepared by hydrotherm... [more] | EID2020-8 SDM2020-42 pp.29-34 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
| SDM | 2020-11-19 14:10 |
Online | Online | [Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics Yusuke Noda (Kanazawa Gakuin Univ.) SDM2020-25 |
The aim of this study is to clarify the relationship between the dielectric constants and other physical and chemical pr... [more] | SDM2020-25 pp.15-20 |
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