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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 524 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ICD, ITE-IST [detail] 2023-08-01
13:00
Hokkaido Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online)
[Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions -- Review R and D of Semiconductor device and LSI for these 43 years --
Koichiro Ishibashi (UEC) SDM2023-38 ICD2023-17
LSI density has been doubling every two years for 64 years, since Moore’s law started in 1959. The presenter began resea... [more] SDM2023-38 ICD2023-17
pp.14-15
EE, IEE-SPC 2023-07-20
13:00
Hyogo
(Primary: On-site, Secondary: Online)
[Invited Talk] Latest Trends in Automotive Power Electronics and Application of Magnetic Components
Jun Imaoka (NU) EE2023-9
Recently, achieving carbon neutrality which means balancing CO2 emissions and absorption is a global concern. Especially... [more] EE2023-9
pp.1-50
CPM, ED, SDM 2023-05-19
13:00
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
[Invited Talk] Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates
Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.) ED2023-1 CPM2023-1 SDM2023-18
We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] ED2023-1 CPM2023-1 SDM2023-18
pp.1-6
CPM, ED, SDM 2023-05-19
16:30
Aichi Nagoya Institute of Technology
(Primary: On-site, Secondary: Online)
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates
Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] ED2023-7 CPM2023-7 SDM2023-24
pp.28-31
HWS 2023-04-15
10:45
Oita
(Primary: On-site, Secondary: Online)
PUF Based on Fetal-Movement Circuit
Kotaro Naruse, Takayuki Ueda, Jun Shiomi, Yoshihiro Midoh, Noriyuki Miura (Osaka Univ.) HWS2023-12
As a yet unexploited high-energy source for powering ICs, this paper focused on high-energy plasma in a semiconductor f... [more] HWS2023-12
pp.49-50
ICD 2023-04-11
13:20
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Talk] Crystalline Oxide Semiconductor-based 3D Bank Memory System for Endpoint Artificial Intelligence with Multiple Neural Networks Facilitating Context Switching and Power Gating
Yuto Yakubo, Kazuma Furutani, Kouhei Toyotaka, Haruki Katagiri, Masashi Fujita, Munehiro Kozuma, Yoshinori Ando, Yoshiyuki Kurokawa (SEL), Toru Nakura (Fukuoka Univ.), Shunpei Yamazaki (SEL) ICD2023-10
We have achieved a small-area, low-power AI chip that enables inference corresponding to multiple neural networks using ... [more] ICD2023-10
pp.18-23
IMQ, IE, MVE, CQ
(Joint) [detail]
2023-03-17
10:45
Okinawa Okinawaken Seinenkaikan (Naha-shi)
(Primary: On-site, Secondary: Online)
Wiped-Rate Estimation for Semiconductor Manufacturing Using DNN Based on 3D Body Tracking
Takehiro Nagata (Univ. of Tsukuba), Li-Wei Cheng (NCKU), Hidehiko Shishido (Univ. of Tsukuba), Hyejin Kim, Chanya Mahapun, Naoki Yoshii, Tsuyoshi Moriya (TEL), Itaru Kitahara (Univ. of Tsukuba) IMQ2022-67 IE2022-144 MVE2022-97
This research presents a method to calculate the corresponding wiped rate from upper body wiping movements to determine ... [more] IMQ2022-67 IE2022-144 MVE2022-97
pp.235-240
HWS, VLD 2023-03-04
13:55
Okinawa
(Primary: On-site, Secondary: Online)
*
Masaru Mashiba, Kazuki Monta (Kobe Univ.), Takaaki Okidono (SCU), Takuzi Miki, Nagata Makoto (Kobe Univ.) VLD2022-121 HWS2022-92
With the development of IoT, security is becoming increasingly important. Confidential information and other information... [more] VLD2022-121 HWS2022-92
pp.267-272
SDM 2023-01-30
13:40
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors.
A da... [more]
SDM2022-80
pp.5-8
MW, ED 2023-01-27
16:15
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
[Invited Talk] Microwave Semiconductor Devices and Circuits for Industrial Innovation
Kazuhiko Honjo (UEC) ED2022-97 MW2022-156
For the past 100 years, the electron saturation velocity, which is an important parameter of semiconductors, has been ab... [more] ED2022-97 MW2022-156
pp.51-54
OME, IEE-DEI 2023-01-19
09:25
Aichi Aichi Himaka island ホテル浦島 [Invited Lecture] Development of organic semiconductors with fluorobenzene derivatives and their application to thin film devices
Takeshi Yasuda (NIMS), Junpei Kuwabara, Takaki Kanbara (University of Tsukuba) OME2022-72
Organic thin-film devices have achieved high-performances through the development of new materials, but at present, many... [more] OME2022-72
pp.37-40
EE, OME, CPM 2022-12-09
15:30
Tokyo
(Primary: On-site, Secondary: Online)
The Role of Governments and Central Banks in the Era of Providing Public Subsidies to Semiconductor Factories
Daisuke Arai, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-28 CPM2022-83 OME2022-41
This paper is a continuation of the contents presented in the past EE meetings (held on November 18, 2021, January 28, 2... [more] EE2022-28 CPM2022-83 OME2022-41
pp.53-58
CPM, ED, LQE 2022-11-25
13:00
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] ED2022-43 CPM2022-68 LQE2022-76
pp.85-88
CPM, ED, LQE 2022-11-25
14:50
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Development of Semiconductor Incoherent Light Source for Forward Raman Amplifier
Junji Yoshida (Furukawa Electric), Naoya Hojo (FFOD), Yasuto Tatamida, Tomohiro Ohisi, Shigehiro Takasaka, Takuya Kokawa, Satoru Ichihara, Ryuichi Sugisaki, Toshio Kimura (Furukawa Electric) ED2022-48 CPM2022-73 LQE2022-81
A semiconductor incoherent light source (iPump) for a forward Raman amplifier with 250 mW fiber output is developed. Fo... [more] ED2022-48 CPM2022-73 LQE2022-81
pp.107-110
ITE-BCT, OCS, IEE-CMN, OFT 2022-11-10
15:50
Miyagi Forest-Sendai
(Primary: On-site, Secondary: Online)
Remotely phase control of microwave signals using semiconductor optical amplifiers and optical beat
Shunya Hayashi, Tomoyuki Uehara, Kenichiro Tsuji (NDA) OFT2022-38
Next-generation access networks are expected to use high-frequency radio signals with high attenuation, requiring the in... [more] OFT2022-38
pp.5-10
HWS, ICD 2022-10-25
11:50
Shiga
(Primary: On-site, Secondary: Online)
Optical Microscopic Observation of Semiconductor Devices toward Hardware Trojan Detection
Hirofumi Sakane, Junichi Sakamoto, Shinichi Kawamura (AIST), Makoto Nagata (Kobe Univ.), Yuichi Hayashi (NAIST) HWS2022-34 ICD2022-26
In this paper we focus on detection of hardware Trojan (HT) in semiconductor devices under a scenario with following ste... [more] HWS2022-34 ICD2022-26
pp.23-28
OPE, OCS, LQE 2022-10-21
16:00
Ehime
(Primary: On-site, Secondary: Online)
Analysis of High-Speed Operation of Hybrid Modulation Semiconductor Lasers Using Coupled-Wave Equations
Shoki Asami, Kaori Uchiyama, Nobuhide Yokota, Hiroshi Yasaka (Tohoku Univ.) OCS2022-39 OPE2022-85 LQE2022-48
High-speed semiconductor lasers are being required to cope with the explosive increase of the traffic in data centers. T... [more] OCS2022-39 OPE2022-85 LQE2022-48
pp.116-119
EE, WPT
(Joint)
2022-10-06
10:05
Osaka
(Primary: On-site, Secondary: Online)
Changes in the Bank's Management of Funds Caused by the Shrinking Balance Sheets of Japan's Electronics Companies
Daisuke Arai, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-14
This paper is a continuation of the contents presented at previous EE meetings (held on November 18, 2021, January 28, 2... [more] EE2022-14
pp.1-6
EMD, R, LQE, OPE, CPM 2022-08-25
13:35
Chiba  
(Primary: On-site, Secondary: Online)
[Invited Talk] Development of wafer quality evaluation platform for realization of high-reliable SiC power semiconductor devices
Junji Senzaki (AIST) R2022-17 EMD2022-5 CPM2022-22 OPE2022-48 LQE2022-11
Various power supplies and inverters equipped with SiC power semiconductor devices that realize energy saving and miniat... [more] R2022-17 EMD2022-5 CPM2022-22 OPE2022-48 LQE2022-11
pp.7-12
EE, IEE-SPC 2022-07-14
13:55
Aichi WINC AICHI
(Primary: On-site, Secondary: Online)
Financial Deterioration of Japanese Electronics Firms since the 1990s and Bank Lending Trends
Daisuke Arai, Yu Yonezawa, Jun Imaoka, Masayoshi Yamamoto (Nagoya Univ.) EE2022-8
This paper is a continuation of the contents presented at previous EE meetings (held on November 18, 2021, January 28, 2... [more] EE2022-8
pp.1-6
 Results 21 - 40 of 524 [Previous]  /  [Next]  
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