Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2014-12-23 11:35 |
Miyagi |
|
Ultra-Compact Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Slot-coupled Patch Antenna Kohe Kasagi, Naoto Oshima, Safumi Suzuki, Masahiro Asada (Tokyo Tech) ED2014-112 |
We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with slot-fed patch antennas ... [more] |
ED2014-112 pp.79-84 |
ED, SDM |
2014-02-28 09:00 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE
-- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157 |
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] |
ED2013-142 SDM2013-157 pp.55-59 |
ED, SDM |
2014-02-28 09:25 |
Hokkaido |
Hokkaido Univ. Centennial Hall |
Application of resonant tunneling diode oscillators to sensors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] |
ED2013-143 SDM2013-158 pp.61-66 |
ED |
2013-12-16 16:35 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
Wide-range Varactor-tuned Terahertz Oscillator Using Resonant Tunneling Diode Seiichirou Kitagawa, Safumi Suzuki, Masahiro Asada (Tokyo Inst. of Tech.) ED2013-97 |
We propose a wide-range varactor-tuned terahertz oscillator using resonant tunneling diode (RTD) and estimate the tuning... [more] |
ED2013-97 pp.41-45 |
ED |
2013-08-08 14:00 |
Toyama |
University of Toyama |
Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-37 |
RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher pe... [more] |
ED2013-37 pp.1-4 |
ED |
2013-08-08 14:25 |
Toyama |
University of Toyama |
Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-38 |
Fluidic Self-Assembly (FSA) using molten metal bumps is one of the most promising Heterogeneous Integration (HI) technol... [more] |
ED2013-38 pp.5-8 |
ED |
2012-12-18 10:50 |
Miyagi |
Tohoku University |
Frequency increase in terahertz oscillation of resonant tunneling diodes by thin and deep quantum wells Hidetoshi Kanaya, Riku Sogabe, Safumi Suzuki, Masahiro Asada (Tokyo Tech.) ED2012-104 |
We report on the increase in frequency for terahertz (THz) oscillating AlAs/InGaAs resonant tunneling diodes (RTDs) with... [more] |
ED2012-104 pp.63-67 |
ED |
2012-12-18 11:15 |
Miyagi |
Tohoku University |
A modeling and analysis of a resonant tunneling diode integrated with a broadband antenna toward terahertz wireless communications Kiyoto Asakawa, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-105 |
When we discuss deeply about system performance of terahertz wireless communication by employing resonant tunneling diod... [more] |
ED2012-105 pp.69-74 |
ED |
2012-07-27 10:20 |
Fukui |
Fukui University |
Large-signal analysis of injection locking and frequency comb properties in array oscillators consisting of resonant tunneling diodes integrated with wideband antennas Kiyoto Asakawa, Atsushi Tashiro, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2012-50 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] |
ED2012-50 pp.49-54 |
ED |
2011-12-14 16:15 |
Miyagi |
Tohoku University |
Nonlinear analysis for zero bias detection by using a triple-barrier resonant tunneling diode integrated with a ultra wideband antenna Satoshi Takahagi, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-106 |
Zero bias detection effective to realize low-power consumption and minimization of detector in terahertz frequency regio... [more] |
ED2011-106 pp.35-40 |
ED |
2011-12-14 16:40 |
Miyagi |
Tohoku University |
Time domain analysis of ultra high speed modulation by using a Resonant Tunneling Diode integrated with an antenna Yosuke Itagaki, Mitsufumi Saito, Michihiko Suhara (Tokyo Metropolitan Univ.) ED2011-107 |
Resonant tunneling diode (RTD) is expected to perform terahertz applications because of its negative
differential condu... [more] |
ED2011-107 pp.41-44 |
ED |
2011-07-30 11:40 |
Niigata |
Multimedia system center, Nagaoka Univ. of Tech. |
Identification of a nonlinear equivalent circuit in triple-barrier resonant tunneling diodes by using the particle swarm optimization method Kiyoto Asakawa, Yuji Kurakami, Mitsufumi Saito, Michihiko Suhara (Tokyo Met. Univ.) ED2011-52 |
A THz range is a frequency region from 300GHz to 10THz and many applications are expected for wireless communications, i... [more] |
ED2011-52 pp.73-77 |
ED |
2010-12-16 13:30 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
[Invited Talk]
Terahertz Oscillating Resonant Tunneling Diode at Room Temperature Safumi Suzuki, Masahiro Asada (Tokyo Tech.) ED2010-158 |
We report on recent results of terahertz oscillators using resonant tunneling diodes. We achieved a fundamental oscillat... [more] |
ED2010-158 pp.1-6 |
ED |
2010-12-16 14:10 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Transit Time Reduction with Graded Emitter in Resonant Tunneling Diode Terahertz Oscillators Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada (Tokyo Tech), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-159 |
We fabricated terahertz oscillators using GaInAs/AlAs double-barrier resonant tunneling diodes with graded emitters on I... [more] |
ED2010-159 pp.7-12 |
ED |
2010-09-13 15:20 |
Fukuoka |
Kyushu Institute of Technology(Wakamatsu) |
Characterization and modeling of triple-barrier resonant tunneling diodes Michihiko Suhara, Kiyoto Asakawa, Yosuke Itagaki, Mitsufumi Saito, Hideaki Shin-ya, Satoshi Takahagi (Tokyo Metro Univ.) ED2010-127 |
Resonant tunneling diodes have been investigated for their wide varieties of physical interests and applications since t... [more] |
ED2010-127 pp.25-30 |
ED, SDM |
2010-06-30 16:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] |
ED2010-61 SDM2010-62 pp.47-48 |
ED |
2010-06-18 10:25 |
Ishikawa |
JAIST |
Theoretical analysis of operating conditions to suppress relaxation oscillations in Resonant Tunneling Diode biased at negative differential resistance region Yosuke Itagaki, Kiyoto Asakawa, Hideaki Shin-ya, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro.Univ) ED2010-43 |
A resonant tunneling diode (RTD) is an active device with negative differential resistance operating up to THz region in... [more] |
ED2010-43 pp.53-58 |
ED |
2009-11-30 09:00 |
Osaka |
Osaka Science & Technology Center |
Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] |
ED2009-166 pp.37-40 |
SDM, ED |
2009-02-26 16:30 |
Hokkaido |
Hokkaido Univ. |
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) ED2008-230 SDM2008-222 |
A comparator with resonant tunneling diodes in proposed to reduce the regeneration time. The proposed circuit has been a... [more] |
ED2008-230 SDM2008-222 pp.35-40 |
ED |
2008-06-14 09:25 |
Ishikawa |
Kanazawa University |
Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU) ED2008-33 |
For compound semiconductor triple-barrier resonant tunneling diodes (TBRTDs), nonlinear equivalent circuits and voltage ... [more] |
ED2008-33 pp.61-66 |