| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-11-15 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor Yasuhisa Omura, Yusuke Kondo (Kansai Univ.)  SDM2013-108 |
This study tries to reproduce the unipolar “forming” process and the “reset” process of the Pt/TiO2/Pt capacitor. It is... [more] | SDM2013-108 pp.49-54 |
| SDM | 2013-06-18 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Resistive Memory Effect of Bio-nanoparticle in Si Oxide Film Mutsunori Uenuma (Osaka Univ.), Takahiko Ban, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2013-55 |
We demonstrated a novel biological process based on a use of a supra molecular protein as a reaction cage in which to fo... [more] | SDM2013-55 pp.57-60 |
| ICD | 2013-04-11 11:40 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Filament Scaling Forming Technique and Level-Verify-Write Scheme with Endurance Over 10 million Cycles in ReRAM Akifumi Kawahara, Ken Kawai, Yuuichirou Ikeda, Yoshikazu Katoh, Ryotaro Azuma, Yuhei Yoshimoto, Kouhei Tanabe, Zhiqiang Wei, Takeki Ninomiya, Koji Katayama, Shunsaku Muraoka, Atsushi Himeno, Kazuhiko Shimakawa, Takeshi Takagi, Kunitoshi Aono (Panasonic) ICD2013-4 |
Endurance characteristics over 10 million cycles almost 10 times higher as existing, and the small filament for leading ... [more] | ICD2013-4 pp.15-20 |
| ICD | 2013-04-11 17:30 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Panel Discussion]
Future prospects of memory solutions for smart society
-- Can new nonvolatile memories replace SRAM/DRAM/Flash? -- Koji Nii (Renesas Erctronics), Tetsuo Endoh (Tohoku Univ.), Yoshikazu Katoh (Panasonic), Satoru Hanzawa (Hitachi), Kazuhiko Kajigaya (Elpida Memory), Atsushi Kawasumi (Toshiba), Toru Miwa (SanDisk) ICD2013-11 |
(To be available after the conference date) [more] | ICD2013-11 p.53 |
| ICD | 2013-04-12 10:20 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Talk]
Unified Solid-State-Storage Architecture with NAND Flash Memory and ReRAM that Tolerates 32× Higher BER for Big-Data Applications Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Masafumi Doi, Ken Takeuchi (Chuo Univ.) ICD2013-14 |
Unified solid-state storage (USSS) with hybrid NAND flash memory / ReRAM provides high system-level data protection. Fou... [more] | ICD2013-14 pp.67-72 |
| ICD | 2013-04-12 11:10 |
Ibaraki | Advanced Industrial Science and Technology (AIST) | [Invited Lecture]
A High Performance Storage Class Memory/MLC NAND Hybrid SSD with Anti-Fragmentation Algorithm Kousuke Miyaji (Chuo Univ.), Hiroki Fujii (Univ. of Tokyo), Koh Johguchi (Chuo Univ.), Kazuhide Higuchi, Chao Sun (Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-15 |
A 3D through-silicon-via (TSV) -integrated hybrid storage class memory (SCM)/multi-level-cell (MLC) NAND solid-state dri... [more] | ICD2013-15 pp.73-78 |
| ICD, IPSJ-ARC | 2013-02-01 11:40 |
Tokyo | Programming Circuit of Multi-level ReRAM Utilizing Voltage Sense-Amplifier Taiki Ibe, Kazuya Nakayama, Akio Kitagawa (Kanazawa Univ.) ICD2012-126 |
For multi-level ReRAM memory, a novel read circuit using a VSA (Voltage Sense Amplifier) is proposed. This circuit compa... [more] | ICD2012-126 pp.45-49 |
|
| SDM | 2012-12-07 16:30 |
Kyoto | Kyoto Univ. (Katsura) | Memory characteristics of ReRAM filament confined in localized area. Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.) SDM2012-136 |
Clarification of memory characteristics of tiny cell is important for practical use of resistive random access memory (R... [more] | SDM2012-136 pp.123-127 |
| SDM | 2012-12-07 16:45 |
Kyoto | Kyoto Univ. (Katsura) | Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,) SDM2012-137 |
We have investigated the effects of the top electrode (TE) materials on the resistive switching (RS) characteristics of ... [more] | SDM2012-137 pp.129-132 |
| SDM, OME | 2012-04-27 14:40 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Effects of Guided Filament Formation in NiO-ReRAM Utilizing Bio Nano Process
-- Control of defects in thin films -- Mutsunori Uenuma, Takahiko Ban, Zheng Bin, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-4 OME2012-4 |
Controllable positioning of conductive filament in resistive memory is demonstrated using gold nanoparticles (GNPs). A G... [more] | SDM2012-4 OME2012-4 pp.15-20 |
| ICD | 2012-04-23 14:20 |
Iwate | Seion-so, Tsunagi Hot Spring (Iwate) | [Invited Talk]
An 8Mb Multi-Layered Cross-Point ReRAM Macro with 443MB/s Write Throughput Akifumi Kawahara, Ryotaro Azuma, Yuuichirou Ikeda, Ken Kawai, Yoshikazu Katoh, Yukio Hayakawa, Kiyotaka Tsuji, Shinichi Yoneda, Atsushi Himeno, Kazuhiko Shimakawa, Takeshi Takagi, Takumi Mikawa, Kunitoshi Aono (Panasonic) ICD2012-3 |
We developed an 8Mb multi-layered cross-point ReRAM Macro with 443MB/s write throughput (64 bits parallel write per 17.2... [more] | ICD2012-3 pp.13-18 |
| ICD | 2011-12-15 16:10 |
Osaka | [Poster Presentation]
Endurance enhancement programming method for 50nm resistive random access memory (ReRAM) Kazuhide Higuchi, Kousuke Miyaji, Koh Johguchi, Ken Takeuchi (Univ. of Tokyo) ICD2011-116 |
Resistive memory is the promising candidate for sub-20nm nonvolatile memory owing to low switching current, high scalabi... [more] | ICD2011-116 pp.75-80 |
|
| SDM, ICD | 2011-08-25 14:55 |
Toyama | Toyama kenminkaikan | Novel power reduction technique for ReRAM with the automatic evasion circuit of the wasteful overwrite Takaya Handa, Kazuya Nakayama, Akio Kitagawa, Junichi Akita (Kanazawa Univ.) SDM2011-80 ICD2011-48 |
ReRAM (Resistance Random Access Memory) is widely expected as a next generation memory and further researches have been ... [more] | SDM2011-80 ICD2011-48 pp.53-57 |
| SDM | 2011-07-04 16:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67 |
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] | SDM2011-67 pp.97-102 |
| ICD | 2011-04-18 11:40 |
Hyogo | Kobe University Takigawa Memorial Hall | [Invited Talk]
ReRAM Test Macro with High Speed Read/Program Circuit
-- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput -- Keiichi Tsutsui, Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Tomohito Tsushima (Sony) ICD2011-3 |
In this work, we present a 4Mb conductive bridge ReRAM test macro realizing 2.3GB/s read-throughput, 216MB/s program-thr... [more] | ICD2011-3 pp.13-18 |
| ICD | 2011-04-19 15:50 |
Hyogo | Kobe University Takigawa Memorial Hall | Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19 |
We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt... [more] | ICD2011-19 pp.105-109 |
| ICD | 2011-04-19 16:15 |
Hyogo | Kobe University Takigawa Memorial Hall | Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) ICD2011-20 |
Resistive Random Access Memory (ReRAM) is attracting attention as a non-volatile memory for the next generation. The con... [more] | ICD2011-20 pp.111-116 |
| ICD, IPSJ-ARC | 2011-01-21 14:50 |
Kanagawa | Keio University (Hiyoshi Campus) | High Error Rate Compensation Architecture and ECC for SSDs with NV-RAM and NAND Flash Mayumi Fukuda, Kazuhide Higuchi, Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo) |
An adaptive codeword ECC is proposed for NV-RAM/NAND integrated SSDs. The acceptable raw bit error rate of NV-RAM and NA... [more] | ICD2010-139 pp.75-80 |
| NC | 2010-10-23 14:30 |
Fukuoka | Kyushu Inst. Tech. (Kitakyushu Sci. and Res. Park) | A ReRAM-based Analog Synaptic Device exhibiting Spike-Timing-Dependent Plasticity Nobuo Akou, Tetsuya Asai (Hokkaido Univ.), Takeshi Yanagida, Tomoji Kawai (Osaka Univ.), Yoshihito Amemiya (Hokkaido Univ.) NC2010-46 |
We propose a STDP synaptic device that employs a resistive RAM (ReRAM). The device is a CMOS-ReRAM-hybrid circuit that c... [more] | NC2010-46 pp.23-28 |
| ED, SDM | 2010-06-30 14:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58 |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has b... [more] |
ED2010-57 SDM2010-58 pp.31-36 |
[Return to Top Page]