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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.)  ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| ICD | 2016-04-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
A 0.6V Operation ReRAM Program Voltage Generator with Adaptively Optimized Comparator Bias-Current for Batteryless IoT Local Device Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Ken Takeuchi (Chuo Univ.) ICD2016-6 |
Resistive RAM (ReRAM) is considered as candidates for batteryless IoT local device because of the low voltage and low po... [more] | ICD2016-6 pp.27-32 |
| ICD | 2016-04-14 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
ReRAM reliability characterization and improvement by machine learning Tomoko Ogura Iwasaki, Sheyang Ning, Hiroki Yamazawa, Chao Sun, Shuhei Tanakamaru, Ken Takeuchi (Chuo Univ.) ICD2016-8 |
The low voltage and fast program capability of ReRAM is very attractive for next-generation memory applications, but the... [more] | ICD2016-8 pp.39-44 |
| SDM, ICD | 2015-08-24 09:30 |
Kumamoto | Kumamoto City | [Invited Talk]
Highly Reliable TaOx ReRAM with Centralized Filament for 28-nm Embedded Application Yukio Hayakawa, Atsushi Himeno, Ryutaro Yasuhara, Satoru Fujii, Satoru Ito, Yoshio Kawashima, Yuuichirou Ikeda, Akifumi Kawahara, Ken Kawai, Zhiqiang Wei, Shunsaku Muraoka, Kazuhiko Shimakawa, Takumi Mikawa, Shinichi Yoneda (Panasonic) SDM2015-57 ICD2015-26 |
For 28-nm embedded application, we have proposed a TaOx-based ReRAM with precise filament positioning and high thermal s... [more] | SDM2015-57 ICD2015-26 pp.1-5 |
| SDM, ICD | 2015-08-25 09:30 |
Kumamoto | Kumamoto City | [Invited Talk]
Low-Power Embedded ReRAM Technology for IoT Applications Makoto Ueki, Akira Tanabe, Hiroshi Sunamura, Mitsuru Narihiro, Kazuya Uejima, Koji Masuzaki, Naoya Furutake, Akira Mitsuiki, Koichi Takeda, Takashi Hase, Yoshihiro Hayashi (Renesas Electronics) SDM2015-65 ICD2015-34 |
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7-x1/10) an... [more] | SDM2015-65 ICD2015-34 pp.41-46 |
| SDM | 2015-06-19 13:20 |
Aichi | VBL, Nagoya Univ. | Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46 |
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] | SDM2015-46 pp.41-45 |
| SDM | 2015-06-19 15:50 |
Aichi | VBL, Nagoya Univ. | Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2015-52 |
a-InGaZnO based non-volatile memories were fabricated as resistive random access memory (ReRAM) for use in System on Pan... [more] | SDM2015-52 pp.75-80 |
| SDM, EID | 2014-12-12 17:15 |
Kyoto | Kyoto University | Study of driving forces that cause resistive switching of binary transition metal oxide memory Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132 |
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] | EID2014-37 SDM2014-132 pp.125-128 |
| SDM, EID | 2014-12-12 17:30 |
Kyoto | Kyoto University | Resistive switching characteristics of NiO-based ReRAM after semi-forming process. Hiroki Sasakura, Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) EID2014-38 SDM2014-133 |
In our previous work, forming processes showing two kinds of modes in resistive switching memory (ReRAM) based on NiO de... [more] | EID2014-38 SDM2014-133 pp.129-134 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
| ICD, CPSY | 2014-12-01 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Poster Presentation]
Evaluation of ReRAM write characteristics Shin Nishikawa (Chuo Univ), Sheyang Ning (Univ. of Tokyo), Ken Takeuchi (Chuo Univ) ICD2014-89 CPSY2014-101 |
Resistance random access memory (ReRAM) is a type of the next generation non-volatile memory due to its faster write spe... [more] | ICD2014-89 CPSY2014-101 p.57 |
| ICD, CPSY | 2014-12-01 15:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Poster Presentation]
A Low-voltage Operation Programing-voltage Generator for ReRAM Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Ken Takeuchi (Chuo univ.) ICD2014-93 CPSY2014-105 |
Although the conventional Solid State Drive (SSD) consist of only NAND flash memory, Resistive RAM (ReRAM) and NAND flas... [more] | ICD2014-93 CPSY2014-105 p.65 |
| SDM | 2014-06-19 15:40 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Temperature Dependence of Resistance of Conductive Nano-filament in Resistance Change Memory Shintaro Otsuka, Yoshifumi Hamada, Tomohiro Shimizu, Shoso Shingubara (Kansai Univ.) SDM2014-57 |
Resistance change memory is expected to become one of next generation non-volatile memories. However, there is a questio... [more] | SDM2014-57 pp.75-78 |
| ICD | 2014-04-17 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Hybrid Storage of ReRAM/TLC NAND Flash with RAID-5/6 for Cloud Data Centers Hiroki Yamazawa, Tsukasa Tokutomi (Chuo Univ.), Shuhei Tanakamaru, Sheyang Ning (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2014-4 |
A hybrid storage architecture of ReRAM and TLC (3bit/cell) NAND Flash with RAID-5/6 is developed to meet cloud data-cent... [more] | ICD2014-4 pp.15-20 |
| ICD | 2014-04-17 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Panel Discussion]
Perspective of emerging memories in systems and systems on emerging memories Toru Miwa (SanDisk), Koji Nii (Renesas), Shinobu Fujita (Toshiba), Hiroki Koike (Tohoku Univ.), Ken Takeuchi (Chuo Univ.) ICD2014-9 |
(To be available after the conference date) [more] | ICD2014-9 p.45 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| ICD | 2014-01-28 15:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Poster Presentation]
Analyzing Data-Retention Characteristics of ReRAM Hiroki Yamazawa (Chuo Univ.), Shuhei Tanakamaru (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2013-114 |
Resistive RAM (ReRAM) is one of the most promising candidates for next generation nonvolatile memories due to its potent... [more] | ICD2013-114 p.37 |
| ICD | 2014-01-28 15:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Poster Presentation]
Control of ReRAM resistance Tatsuya Fujii, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ) ICD2013-128 |
ReRAM is being developed and considered as a next-generation non-volatile memory. It shows excellent performances such a... [more] | ICD2013-128 p.65 |
| ICD | 2014-01-29 13:00 |
Kyoto | Kyoto Univ. Tokeidai Kinenkan | [Invited Talk]
Next-Generation Solid-State-Drive Design with Semiconductor Non-Volatile Memories Koh Johguchi (Chuo Univ.) ICD2013-135 |
Thanks to the recent fabrication technology development, the bit cost of NAND flash memories has been reduced. Thus, sol... [more] | ICD2013-135 p.83 |
| SDM | 2013-12-13 14:10 |
Nara | NAIST | [Invited Talk]
Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM) Kentaro Kinoshita (Tottori Univ./TEDREC), Sho Hasegawa (Tottori Univ.) |
We found that both switching voltages and switching current of Cu/HfO2/Pt-structured conducting-bridge random access mem... [more] | |
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