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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 25  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2023-07-31
15:10
Hokkaido
(Primary: On-site, Secondary: Online)
Investigation of MIM structure with ZrN electrode as Resistive Random Access Memory
Toyoki Miura, Masaru Sato, Mayumi Takeyama (Kitami Institute) CPM2023-14
In the rapidly advancing information society, higher performance nonvolatile memories are demanded. In such a situation,... [more] CPM2023-14
pp.11-12
CPM 2021-03-03
13:45
Online Online Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film
Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] CPM2020-69
pp.52-54
CPM 2020-10-29
16:40
Online Online Preparation of low-temperature-deposited ZrO2 film applicable to RRAM
Masaru Sato, Yuki Kawai, Takayuki Mukai, Mayumi B. Takeyama (Kitami Inst. of tech.) CPM2020-21
In order to form insulating films applicable to resistive random access memory, we have prepared low-temperature-deposit... [more] CPM2020-21
pp.38-40
RCS, SR, SRW
(Joint)
2020-03-05
10:55
Tokyo Tokyo Institute of Technology
(Cancelled but technical report was issued)
A Study on Prediction of Environmental Value and Transmission Power Control in WLAN
Hironori Godo, Osamu Takyu (Shinshu Univ.), Koichi Adachi (UEC), Mai Ohta (Fukuoka Univ.), Takeo Fujii (UEC) SR2019-126
Wireless local area networks (WLAN) are widely spread over office and home for supporting various applications. In recen... [more] SR2019-126
pp.79-86
MRIS, ITE-MMS, IEE-MAG 2019-10-17
13:00
Fukuoka Kyushu University (Nishijin Plaza) Spin orbit torque-magnetization switching without external field in rare earth-transition metal alloy
Masakazu Wakae, Masahiro Itoh, Yuichiro Kurokawa, Kohei Ohnishi, Hiromi Yuasa (Kyushu Univ.) MRIS2019-15
SOT (Spin-orbit torque) has been attractively studied as one of the most active research topics because it can manipulat... [more] MRIS2019-15
pp.1-5
SIS 2018-12-07
09:30
Yamaguchi Hagi Civic Center A Switching Noise Removal Filter Based on Convolutional Neural Networks and Its Application to Random-valued Impulse Noise
Yukiya Fukuda, Ryosuke Kubota (NIT, UC) SIS2018-29
In order to remove random-valued impulse noise (RVIN) on a color image, we propose a novel switching denoising filter ba... [more] SIS2018-29
pp.41-46
EE 2018-01-29
14:40
Oita Satellite Campus Oita [Special Talk] Conducted Noise Generation Mechanism and Its Reduction Technology in Switching Power Supplies
Masahito Shoyama (Kyushu Univ.) EE2017-61
Switching power supply circuits have salient features of small size, light weight and high efficiency, and so they were ... [more] EE2017-61
pp.109-114
EMCJ 2017-11-22
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Noise Source Amplitude Modulation Method to Identify Source Devices of Electromagnetic Interference
Chiaki Ishida, Shinpei Yoshino, Chiaki Ogawa, Kengo Iokibe, Yoshitaka Tyota, Yasuyuki Nogami (Okayama Univ.) EMCJ2017-70
For a low cost determination of noise sources to reduce electromagnetic interference (EMI), we have proposed a method to... [more] EMCJ2017-70
pp.35-40
SIS 2017-06-01
10:10
Oita Housen-Sou (Beppu) Hierarchization of Genetic Algorithm Adopting Variability of Individuals and Its Application to Design of Switching Median Filter
Shinya Ishimoto, Keiichi Horio (Kyushu Inst. of Tech.), Ryosuke Kubota (UIT, UC) SIS2017-2
In this paper, we propose a new hierarchical genetic algorithm (HGA) adopting variability of individuals and fireworks a... [more] SIS2017-2
pp.7-12
ICD 2016-04-14
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy
Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] ICD2016-5
pp.21-26
SIS 2016-03-11
10:30
Tokyo Tokyo City Univ. A Designing Method of Switching Median Filter Based on Genetic Algorithm with Variability of Individual
Shinya Ishimoto (NIT UC), Keiichi Horio (Kyushu Inst. of Tech.), Ryosuke Kubota (NIT UC) SIS2015-64
In this paper, we propose a new switching median filter with signal dependent thresholds designed by a genetic algorithm... [more] SIS2015-64
pp.93-98
SDM 2015-06-19
13:20
Aichi VBL, Nagoya Univ. Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides
Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2015-46
We have studied the formation of Ti Nanodots (NDs) by remote-H2 plasma treatment and an impact of Ti-NDs embedding into ... [more] SDM2015-46
pp.41-45
NLP, CCS 2015-06-11
10:55
Tokyo Waseda Univerisity Amplitude Switching Phenomena in Coupled Networks of Hard Type Oscillators
Ryota Hirano, Takuya Kitamura, Seiichiro Moro (Univ. Fukui) NLP2015-43 CCS2015-5
In this study, we investigate the oscillation phenomena in a random-coupled network of hard-type oscillators whose nonli... [more] NLP2015-43 CCS2015-5
pp.25-30
SIS 2015-06-09
10:00
Nagasaki Arkas SASEBO Random-Valued Impulse Noise Removal of Color Images by Switching Non-local Vector Median Filter
Jyohei Matsuoka (Yamaguchi Univ.), Takanori Koga (Tokuyama College of Technology), Noriaki Suetake, Eiji Uchino (Yamaguchi Univ.) SIS2015-9
In this report, in order to remove the random-valued impulse noise superimposed on the color image, a new switch-type im... [more] SIS2015-9
pp.45-50
SDM, EID 2014-12-12
17:15
Kyoto Kyoto University Study of driving forces that cause resistive switching of binary transition metal oxide memory
Ryosuke Koishi, Takumi Moriyama, Kouhei Kimura, Kouki Kawano, Hidetoshi Miyashita, Sang-Seon Lee, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-37 SDM2014-132
It is widely received that resistive switching of resistive random access memory (ReRAM) is caused by formation and rupt... [more] EID2014-37 SDM2014-132
pp.125-128
CAS, SIP, MSS, VLD, SIS [detail] 2014-07-09
15:10
Hokkaido Hokkaido University Impulse Noise Removal by Using Non-local Median Filter
Jyohei Matsuoka, Noriaki Suetake, Eiji Uchino (Yamaguchi Univ.) CAS2014-14 VLD2014-23 SIP2014-35 MSS2014-14 SIS2014-14
In this report, we deal with the removal of the random impulse noise superimposed on the monochrome image. For the remov... [more] CAS2014-14 VLD2014-23 SIP2014-35 MSS2014-14 SIS2014-14
pp.63-68
ED, SDM 2014-02-28
11:40
Hokkaido Hokkaido Univ. Centennial Hall Direct observation of conductive filaments during MoOx/Cu ReRAM switching
Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] ED2013-148 SDM2013-163
pp.89-94
SDM 2011-07-04
16:20
Aichi VBL, Nagoya Univ. Resistive Switching Properties of Si-Oxide Thin Films Prepared by RF Sputtering
Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-67
Resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes have been studided in comp... [more] SDM2011-67
pp.97-102
SIS 2010-12-02
10:00
Nara   Random-valued Impulse Noise Removal Based on Switching Median Filter with Threshold Auto-Tuning
Ryosuke Kubota (Ube NCT), Noriaki Suetake (Yamaguchi Univ.) SIS2010-35
In order to remove the random-valued impulse noise in a color image effectively, we propose a switching median filter wh... [more] SIS2010-35
pp.1-6
ITE-MMS, MRIS 2010-10-14
16:15
Akita Akita Research and Development Center Fabrication of L10-FePt based TMR multilayer using Fe(PdxPt1-x) with tunable perpendicular magnetic anisotropy for spin torque transfer MRAM application
Shogo Omiya, Satoru Yoshimura, Genta Egawa, Hitoshi Saito (Akita Univ.) MR2010-27
We have succeeded in fabrication of highly ordered L10-Fe(Pd,Pt) film with tunable perpendicular magnetic anisotropy.
T... [more]
MR2010-27
pp.31-36
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