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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2016-03-03 16:15 |
Tokyo | S322 lecture room, Tokyo Tech, O-okayama campus | Fabrication of organic transistor array on curved surface by thermal press molding Kento Watanabe, Yushi Sasaki, Junro Hayashi, Masatoshi Sakai, Yugo Okada, Hiroshi Yamauchi, Kazuhiro Kudo (Chiba Univ.)  OME2015-91 |
Organic transistor has been studied to apply bioelectronics such as biosensor and artificial retina, by making use of fl... [more] | OME2015-91 pp.25-28 |
| EID, SDM | 2015-12-14 13:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] | EID2015-15 SDM2015-98 pp.27-30 |
| EID, SDM | 2015-12-14 15:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103 |
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] | EID2015-20 SDM2015-103 pp.49-52 |
| OME, IEE-DEI | 2015-07-29 15:00 |
Toyama | Univ. of Toyama | Organic Thin Film Transistor with Various Interfacial Layer Safizan Shaari, Shigeki Naka, Hiroyuki Okada (Univ. of Toyama) OME2015-38 |
Organic Thin-Film Transistor (OTFTs) using organic semiconductors with various insulating interfacial layers (IILs) were... [more] | OME2015-38 pp.23-27 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| ED | 2014-12-22 14:35 |
Miyagi | Output power performance of InGaAs/InAlAs HEMT at 90-GHz band Issei Watanabe (NICT), Akira Endoh (NICT/Fujistu Lab.), Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujistu Lab.) ED2014-101 |
InGaAs/InAlAs high electron mobility transistors (HEMTs) are the most promising electron devices not only for future ult... [more] | ED2014-101 pp.15-19 |
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| ED | 2014-08-01 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Improvement of Off-State Characteristics with a P-Type Capping Layer in GaAs JPHEMT Katsuhiko Takeuchi, Satoshi Taniguchi, Masashi Yanagita (Sony), Yuji Sasaki, Mitsuhiro Nakamura (Sony Semiconductor), Shinichi Wada (Sony) ED2014-58 |
Due to its low insertion loss and the high linearity, the JPHEMT is widely used for RF switches in wireless communicatio... [more] | ED2014-58 pp.29-34 |
| ED | 2014-08-01 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | HAXPES Analysis for GaAs Surface State for Electronics Devices Yoshihiro Saito, Daisuke Tsurumi, Junji Iihara, Aiko Tominaga, Takumi Yonemura, Koji Yamaguchi (SEI) ED2014-61 |
Abstract The surface states of GaAs have been characterized, by using the hard x-ray photoemission spectroscopy (HAXPES)... [more] | ED2014-61 pp.47-50 |
| CPM, ED, SDM | 2014-05-28 16:10 |
Aichi | Static and dynamic operations of MOSFET by propagated surface plasmon signal Hiroki Sakai, Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) ED2014-28 CPM2014-11 SDM2014-26 |
Surface plasmon polaritons (SPPs) have attracted considerable attention as a means of increasing integration density of ... [more] | ED2014-28 CPM2014-11 SDM2014-26 pp.51-54 |
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| CPM, ED, SDM | 2014-05-28 16:30 |
Aichi | Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma and Electron Device Application Kyohei Kawakami, Takahiro Ishimaru, Masatoshi Shinohara, Hiroshi Okada (Toyohashi Tech), Masakzu Furukawa (Aries Research Group), Akihiro Wakahara, Hiroto Sekiguchi (Toyohashi Tech) ED2014-29 CPM2014-12 SDM2014-27 |
New chemical vapor deposition technique using surface-wave plasma is proposed, and silicon nitride film deposition is ma... [more] | ED2014-29 CPM2014-12 SDM2014-27 pp.55-58 |
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| SDM, OME | 2014-04-11 10:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus) SDM2014-13 OME2014-13 |
For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plasti... [more] | SDM2014-13 OME2014-13 pp.55-57 |
| MoNA, IPSJ-MBL, IPSJ-UBI | 2014-03-14 12:00 |
Kanagawa | Keio Univ. (Hiyoshi Campus) | AcrySense: Interactive Carved Acrylic Board Marina Mikubo (Ochanomizu Univ.), Koji Tsukada (Future University Hakodate/ JST), Itiro Siio (Ochanomizu Univ.) MoNA2013-84 |
These days, the carved acrylic boards became popular because the laser cutters have widespread. When an acrylic board is... [more] | MoNA2013-84 pp.357-362 |
| ED, SDM | 2014-02-27 14:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication and characterization of n-type carbon nanotube thin film transistors on plastic film Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2013-134 SDM2013-149 |
We realized high mobility n-type carbon nanotube thin-film transistors on a plastic film using the transfer process and ... [more] | ED2013-134 SDM2013-149 pp.13-18 |
| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-24 17:00 |
Kyoto | Doshisha University | Static and dynamic characteristics of surface plasmon detector-MOSFET integrated circuit Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 |
Optical interconnections (OIs) in integrated circuits have been developed for high-speed and large-capacity date-process... [more] | PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 pp.303-306 |
| OME | 2013-10-11 10:40 |
Osaka | Osaka Univ. Nakanoshima Center | Fabrication of Active Antenna for RFID Tag using Organic Oransistors Sho Hasegawa, Shunsuke Isoda, Takahiro Hashizume, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masaaki Iizuka (Chiba Univ.) OME2013-53 |
In this research, we propose active antenna combined with Step-edge Vertical Channel Organic Field-Effect Transistor (SV... [more] | OME2013-53 pp.11-16 |
| ED | 2013-08-09 11:20 |
Toyama | University of Toyama | Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-49 |
Recently, devices with three-dimensional structure such as nanowire field effect transistor (NW-FETs) and FinFETs has ex... [more] | ED2013-49 pp.61-65 |
| SDM, ICD | 2013-08-01 09:50 |
Ishikawa | Kanazawa University | Scaling Strategy for Low Power RF Applications with Multi Gate Oxide Dual Work function (DWF) MOSFETs Utilizing Self-Aligned Integration Scheme Toshitaka Miyata, Shigeru Kawanaka, Akira Hokazono, Tatsuya Ohguro, Yoshiaki Toyoshima (TOSHIBA) SDM2013-67 ICD2013-49 |
Dual Work Function (DWF)-MOSFET of 100 nm gate length device with self-aligned integration scheme was demonstrated utili... [more] | SDM2013-67 ICD2013-49 pp.13-18 |
| ICD, ITE-IST | 2013-07-05 18:05 |
Hokkaido | San Refre Hakodate | 1um Thickness Surface Electromyogram Measurement Sheet with 2V Organic Transistors for Prosthetic Hand Control Hiroshi Fuketa, Kazuaki Yoshioka, Yasuhiro Shinozuka, Koichi Ishida, Tomoyuki Yokota, Naoji Matsuhisa, Yusuke Inoue, Masaki Sekino, Tsuyoshi Sekitani, Makoto Takamiya, Takao Someya, Takayasu Sakurai (Univ. of Tokyo/JST) ICD2013-46 |
A 64-channel surface electromyogram (EMG) measurement sheet with 2V organic transistors on a 1um-thick ultra-flexible po... [more] | ICD2013-46 pp.135-140 |
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
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