| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-10-13 17:00 |
Miyagi | Niche, Tohoku Univ. | A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech)  SDM2023-61 |
LaBxNy insulator films are realized by utilizing Ar/N2 plasma reactive sputtering with nitrogen doped LaB6 as a target. ... [more] | SDM2023-61 pp.46-49 |
| MIKA (3rd) |
2023-10-10 15:35 |
Okinawa | Okinawa Jichikaikan (Primary: On-site, Secondary: Online) |
[Poster Presentation]
Epitaxial piezoelectric thin film multilayer structure for RF filters Satoshi Tokai, Yanagitani Takahiko (Waseda Univ.) |
Wireless communication devices such as smartphones are equipped with many frequency filters to transmit and receive only... [more] | |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| CPM | 2020-10-29 15:30 |
Online | Online | Characterization of Photocatalytic Gold-Doped Tantalum Pentoxide Thin Films Prepared Using a Simple Co-Sputtering Method Kai Ito, Yuya Hashimoto, Kenta Miura, Katsuya Noguchi, Wataru Kada, Osamu Hanaizumi (Gunma Univ.) CPM2020-18 |
Gold-doped tantalum pentoxide (Ta2O5:Au) thin films were deposited using a co-sputtering method. From a transmission spe... [more] | CPM2020-18 pp.27-30 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2018-10-18 10:20 |
Miyagi | Niche, Tohoku Univ. | Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58 |
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] | SDM2018-58 pp.31-34 |
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| SDM | 2017-02-06 10:05 |
Tokyo | Tokyo Univ. | [Invited Talk]
Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba) SDM2016-139 |
We evaluated the impact of process damage caused by dry or sputtering on chemical mechanical planarization (CMP) with Cu... [more] | SDM2016-139 pp.1-4 |
| EID, SDM | 2015-12-14 13:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] | EID2015-15 SDM2015-98 pp.27-30 |
| EID, SDM | 2015-12-14 15:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103 |
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] | EID2015-20 SDM2015-103 pp.49-52 |
| CPM | 2015-08-11 09:40 |
Aomori | Low temperature deposition of HfNx film by radical reaction Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40 |
We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] | CPM2015-40 pp.47-50 |
|
| SDM, EID | 2014-12-12 14:45 |
Kyoto | Kyoto University | Characteristics of Ga-Sn-Oxide thin film Yuta Kato, Daiki Nishimoto, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2014-28 SDM2014-123 |
Thin films of Ga-Sn-O (GTO) were studied for device applications. Transmittance of GTO thin films with composition ratio... [more] | EID2014-28 SDM2014-123 pp.79-82 |
| SDM, OME | 2014-04-11 10:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Electrical Characterization of SiO2 Films Deposited by RF Sputtering Using O2/Ar Mixture Kimihiko Imura, Tatsuya Okada, Kiyoharu Shimoda, Kouya Sugihara, Takashi Noguchi (Univ. of Ryukyus) SDM2014-13 OME2014-13 |
For a fabrication of flexible display, high quality gate insulator films on a thermally durable substrate such as plasti... [more] | SDM2014-13 OME2014-13 pp.55-57 |
| MRIS, ITE-MMS | 2013-07-12 13:50 |
Tokyo | Chuo Univ. | Surface Flatness Control of Ferromagnetic Alloy Thin Films with L10 Ordered Structure Akira Itabashi, Mitsuru Ohtake (Chuo Univ.), Fumiyoshi Kirino (Tokyo University of the Arts), Masaaki Futamoto (Chuo Univ.) MR2013-7 |
FePd, FePt, and CoPt alloy epitaxial thin films with L10 structure are prepared on (001) single-crystal substrates of Mg... [more] | MR2013-7 pp.7-12 |
| CPM | 2012-10-26 14:15 |
Niigata | Examination of Resistivity of AZO Thin Films Deposited by Sputtering Method Katsuhito Nagoshi, Yusuke Tomiguchi, Hidehiko Shimizu, Haruo Iwano, Takahiro Kawakami, Yasuo Fukushima, Kotaro Nagata, Nozomu Tsuboi, Takahiro Nomoto (Niigata Univ.) CPM2012-95 |
We examined the effects of the substrate temperature and post-annealing in vacuum less than 2.0×10-6 Torr of AZO thin fi... [more] | CPM2012-95 pp.13-16 |
|
| US | 2012-09-24 14:45 |
Akita | Tegata Campus, Akita Univ. | Fabrication of polarity-inverted ZnO films using ion bombardment to the substrate during an RF magnetron sputtering Ryo Ikoma (Doshisha Univ.), Takahiko Yanagitani (Nagoya Inst.Tech.), Shinji Takayanagi (Doshisha Univ.), Masashi Suzuki (Nagoya Inst.Tech.), Hiroyuki Odagawa (Kumamoto NCT), Mami Matsukawa (Doshisha Univ.) US2012-61 |
ZnO have been used as SAW devices and high frequency transducer owing to its high electromechanical coupling. In general... [more] | US2012-61 pp.21-25 |
| SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa | Okinawa Seinen-kaikan | [Poster Presentation]
The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture Jonghun Kim, Gyohun Koo, Changju Lee, Sungho Hahm (Kyungpook National Univ.), Youngchul Jung (Gyeongju Univ.), Yougsoo Lee (Kyungpook National Univ.) |
The crystalline structures of reactively sputtered nickel oxide films grown on SiO2/Si were systematically analyzed by a... [more] | |
| ED, SDM, CPM | 2012-05-18 14:50 |
Aichi | VBL, Toyohashi Univ. of Technol. | Preparation and evaluation of LiMn2O4 films prepared by sputtering method Akio Niwa, Masaaki Isai, Mitsuhiro Nakamura, Takashi Noguchi (Shizuoka Univ.) ED2012-37 CPM2012-21 SDM2012-39 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. In this research, w... [more] | ED2012-37 CPM2012-21 SDM2012-39 pp.99-104 |
[Return to Top Page]