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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MI | 2015-03-02 09:05 |
Okinawa | Hotel Miyahira | Reconstitution of Developmental Dynamics of Mammalian Embryogenesis from 3D Confocal Microscope Images Tetsuya J. Kobayashi (Univ. Tokyo), Mitsunori Ozeki (Keio Univ.), Kazuo Yamagata (Osaka Univ.), Akira Funahashi (Keio Univ.)  MI2014-53 |
Reconstruction of developmental dynamics of mammalian preimplantation embryos from bioimaging data by using image analys... [more] | MI2014-53 pp.1-6 |
| EST, OPE, LQE, EMT, PN, MWP, IEE-EMT [detail] | 2015-01-29 09:00 |
Osaka | Fabrication of carbon nanotube implantation embedded structure in ZnO Shunichi Umeda (Aoyamagakuin Univ.), Kouichi Akahane (NICT), Hideyuki Sotobayashi (Aoyamagakuin Univ.) PN2014-27 OPE2014-152 LQE2014-139 EST2014-81 MWP2014-49 |
CNT is expected as an application to optical device, because it has a lot of unique optical properties. Until now the st... [more] | PN2014-27 OPE2014-152 LQE2014-139 EST2014-81 MWP2014-49 pp.1-4 |
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| EE | 2015-01-30 12:30 |
Kumamoto | Sakura-No-Baba JOSAIEN | Study on Technology of Wireless Power Transfer to High Voltage Region with Data Transfer Function Junki Ishizaki (Doshisha Univ), Toshihiro Kubo, Yoshio Matsubara (Nissin Electric), Yasuhito Takahashi, Koji Fujiwara (Doshisha Univ) EE2014-37 |
In electron beam processing system and ion implantation devices, since it is necessary to supply electric power to their... [more] | EE2014-37 pp.49-53 |
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| SDM, EID | 2014-12-12 11:00 |
Kyoto | Kyoto University | Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112 |
Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] | EID2014-17 SDM2014-112 pp.21-24 |
| SDM | 2014-11-06 10:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional calculation of ion implantation to SiC substrate Minoru Okamoto, Mamoru Shimizu, Yasuyuki Ohkura, Ken Yamaguchi, Hideaki Koike (AdvanceSoft) SDM2014-98 |
[more] | SDM2014-98 pp.13-18 |
| SDM | 2014-10-16 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Ion Implantation Technologies for Image Sensing Devices Yoji Kawasaki, Genshu Fuse, Makoto Sano, Emi Ooga, Masazumi Koike, Kazuhiro Watanabe, Michiro Sugitani (SEN Corp.) SDM2014-88 |
Some trends of the implantation processing in device fabrication of CMOS image sensors are discussed. Firstly, the varia... [more] | SDM2014-88 pp.23-30 |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| CPM, ED, SDM | 2014-05-29 14:00 |
Aichi | P - GaN by Mg Ion Implantation for Power Device Applications Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38 |
We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique an... [more] | ED2014-40 CPM2014-23 SDM2014-38 pp.109-112 |
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| CPM, ED, SDM | 2014-05-29 14:20 |
Aichi | Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39 |
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] | ED2014-41 CPM2014-24 SDM2014-39 pp.113-118 |
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| SDM, OME | 2014-04-11 10:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Fabrication of poly-Si TFT with low-temperature process using BLDA Kiyoharu Shimoda, Kouya Sugihara, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) SDM2014-14 OME2014-14 |
Poly-Si TFTs by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT witho... [more] | SDM2014-14 OME2014-14 pp.59-61 |
| SIS | 2014-03-07 10:00 |
Osaka | Gran Front Osaka, Knowledge Capital C-9F, 901 | [Tutorial Lecture]
System-on-a-Chip Implementation Technology for Image Media Processing Takao Onoye (Osaka Univ.) SIS2013-66 |
In early 1990's just after the completion of MPEG-2 standardization efforts and advent of DVD players, a VLSI system whi... [more] | SIS2013-66 p.55 |
| SDM | 2014-02-28 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Novel Implantation Process of Carbon Nanotubes for Plugs and Vias, and their Integration with Transferred Multilayer Graphene Wire Obtained by Annealing Sputtered Amorphous Carbon Motonobu Sato, Makoto Takahashi, Mizuhisa Nihei, Shintaro Sato, Naoki Yokoyama (AIST) SDM2013-170 |
We have developed a novel process, the implantation of carbon nanotubes (CNTs) into holes like plugs, vias, and through-... [more] | SDM2013-170 pp.29-33 |
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| ED, MW | 2014-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181 |
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] | ED2013-116 MW2013-181 pp.35-39 |
| LQE, OCS, OPE | 2013-10-24 10:00 |
Fukuoka | Development of high performance ultrafast intersubband all-optical gate switch using ion implantation Ryoichi Akimoto, Feng Jijun, Shin-ichiro Gozu, Teruo Mozume, Hiroshi Ishikawa (AIST) OCS2013-48 OPE2013-94 LQE2013-64 |
We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two diff... [more] | OCS2013-48 OPE2013-94 LQE2013-64 pp.5-8 |
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| SDM, ED, CPM | 2013-05-16 16:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. | Focused ion beam Ga implantation into P-doped SOI layer and its Seebeck coefficient Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./ Research Fellow of JSPS), Masaru Shimomura, Akihiro Ishida, Hiroya Ikeda (Shizuoka Univ.) ED2013-22 CPM2013-7 SDM2013-29 |
With the aim of fabricating a thermopile infrared detector using Si nanowires, we have investigated the formation of a p... [more] | ED2013-22 CPM2013-7 SDM2013-29 pp.33-37 |
| MBE, NC (Joint) |
2013-03-13 13:45 |
Tokyo | Tamagawa University | Simulation of phosphene pattern evoked by electrical stimulation on V1 and V2 Yuto Kamiya, Hirotsugu Okuno, Seiji Kameda, Tetsuya Yagi (Osaka Univ.) NC2012-147 |
We have developed a phosphene pattern simulator assuming electrical stimulation on V1 and V2 . The simulation system cal... [more] | NC2012-147 pp.79-83 |
| EE, CPM | 2013-01-25 11:40 |
Kumamoto | Study on Technology Suitable to Long Gap Wireless Power Transfer to High Voltage Region Ryota Gondo (Doshisha Univ.), Toshihiro Kubo, Yoshio Matsubara (NISSIN), Yasuhito Takahashi, Koji Fujiwara (Doshisha Univ.) EE2012-49 CPM2012-171 |
In electron beam processing system and ion implantation devices, it is necessary to supply electric power to their high ... [more] | EE2012-49 CPM2012-171 pp.123-128 |
|
| SDM | 2012-12-07 14:00 |
Kyoto | Kyoto Univ. (Katsura) | Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127 |
The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] | SDM2012-127 pp.71-76 |
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