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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2018-11-30 11:15 |
Aichi | Nagoya Inst. tech. | Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.)  ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] | ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| ICD | 2018-04-20 13:50 |
Tokyo | [Invited Talk]
Memory LSI using crystalline oxide semiconductor FET Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12 |
FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-sta... [more] | ICD2018-12 pp.47-52 |
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| SDM, OME | 2018-04-07 14:15 |
Okinawa | Okinawaken Seinen Kaikan | Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8 |
Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky c... [more] | SDM2018-8 OME2018-8 pp.33-36 |
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| SDM, EID | 2017-12-22 13:15 |
Kyoto | Kyoto University | Flexible Device Applications Using GaSnO Thin Films Ryo Takagi (Ryukoku Univ.), Kenta Umeda (NAIST), Tokiyoshi Matsuda (Ryukoku Univ.), Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-16 SDM2017-77 |
Thin-film transistors (TFTs) and thermoelectric conversion elements were evaluated by using an amorphous Ga-Sn-O (a-GTO)... [more] | EID2017-16 SDM2017-77 pp.23-28 |
| SDM, EID | 2017-12-22 13:30 |
Kyoto | Kyoto University | Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78 |
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. Ho... [more] | EID2017-17 SDM2017-78 pp.29-34 |
| CPM | 2017-07-21 14:06 |
Hokkaido | Study on the ZnO thin films prepared by sol-gel method Yukio Suganuma, Yasushi Takano (Shizuoka Univ.) CPM2017-23 |
Zinc oxide (ZnO) and magnesium zinc oxide thin films were prepared by the sol-gel method. We charactierized the films us... [more] | CPM2017-23 pp.9-13 |
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| ED, SDM | 2017-02-24 10:50 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149 |
Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.3... [more] | ED2016-132 SDM2016-149 pp.13-16 |
| SDM, EID | 2016-12-12 16:15 |
Nara | NAIST | Characterization of planar synapses with GTO thin films Keisuke Ikushima, Kenta Umeda, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2016-27 SDM2016-108 |
Neural networks are information processing models based on the human brain, and they have been activity studied. Howeve... [more] |
EID2016-27 SDM2016-108 pp.81-84 |
| CPM, LQE, ED | 2016-12-13 13:00 |
Kyoto | Kyoto University | Growth and application of corundum-structured n- and p-type wide band gap oxide semiconductors Kentaro Kaneko (Kyoto Univ.), Toshimi Hitora (FLOSFIA INC.), Shizuo Fujita (Kyoto Univ.) ED2016-74 CPM2016-107 LQE2016-90 |
Electronic carrier concentrations in corundum-structured α-In2O3 thin films decreased by being doped with a Mg ion. A M... [more] | ED2016-74 CPM2016-107 LQE2016-90 pp.85-88 |
| CPM | 2016-11-19 11:15 |
Ishikawa | Microwave activated chemical bath deposition of ZnO thin films Hiroaki Yoshiyachi, Yasushi Takano (Shizuoka Univ.) CPM2016-72 |
Zinc oxide (ZnO) film has been deposited using chemical bath deposition (CBD).We compared ZnO fims deposited by microwav... [more] | CPM2016-72 pp.55-58 |
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| SANE | 2016-10-20 14:20 |
Osaka | OIT UMEKITA Knowledge Center | [Special Talk]
Intelligent Electronic Nose with Metal-Oxide Gas Sensors and its Applicability to Smell Communication Sigeru Omatu (OIT) SANE2016-40 |
In this paper, we will show the e-nose system using neural networks and its application to fire detection system. Fina... [more] |
SANE2016-40 pp.3-11 |
| ED | 2016-07-23 15:05 |
Tokyo | Tokyo Metropolitan Univ. Minami-Osawa Campus, International House | Effects of post-deposition anneal on SiO2 layer on Ga2O3 Keita Konishi, Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki, Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2016-29 |
Ga2O3 is an attractive new oxide semiconductor for next-generation power devices due to its extremely large bandgap of 4... [more] | ED2016-29 pp.11-15 |
| SDM, OME | 2016-04-09 09:30 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
Nonvolatile Memory Applications Using Oxide Thin-Film Transistors Sung-Min Yoon, So-Jung Kim, Min-Ji Park, Da-Jeong Yun (Kyung Hee Univ.) SDM2016-12 OME2016-12 |
The embeddable nonvolatile memory devices with such characteristics as mechanical flexibility and/or transparency to the... [more] | SDM2016-12 OME2016-12 pp.49-52 |
| ED, SDM | 2016-03-03 14:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | [Invited Talk]
A Recent Development in Thin-Film Device Applications using Oxide Semiconductors Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128 |
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] | ED2015-121 SDM2015-128 pp.1-6 |
| ED | 2016-01-20 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
State-of-the-art technology of gallium oxide power devices Masataka Higashiwaki, Man Hoi Wong, Keita Konishi (NICT), Kohei Sasaki (Tamura/NICT), Ken Goto (Tamura/TAT), Kazushiro Nomura, Quang Tu Thieu, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Bo Monemar, Akinori Koukitu (TAT), Akito Kuramata, Takekazu Masui, Shigenobu Yamakoshi (Tamura) ED2015-114 |
Gallium oxide (Ga{$_{2}$}O{$_{3}$}) is one of oxide semiconductors and has excellent material properties for power devic... [more] | ED2015-114 pp.13-18 |
| EID, SDM | 2015-12-14 13:45 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Evaluation of In2O3 film deposited by RF magnetron sputtering Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) EID2015-15 SDM2015-98 |
Oxide semiconductors have attracted much attention as a promising alternative to hydrogenated amorphous Si (a-Si:H) and ... [more] | EID2015-15 SDM2015-98 pp.27-30 |
| EID, SDM | 2015-12-14 14:00 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of GaxSn1-xO thin film by the mist CVD method Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-16 SDM2015-99 |
Thin films of GaxSn1-xO (GTO) for an active layer of thin film transistor (TFT) were deposited with different substrate ... [more] | EID2015-16 SDM2015-99 pp.31-34 |
| EID, SDM | 2015-12-14 15:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) EID2015-20 SDM2015-103 |
Oxide semiconductor with mixture of SnO2 and Al2O3at ratio Sn : Al = 9 : 1 was examined for active layer of thin film tr... [more] | EID2015-20 SDM2015-103 pp.49-52 |
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