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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
IPSJ-ARC, VLD, CPSY, RECONF, IPSJ-SLDM [detail] 2018-01-18
13:50		 Kanagawa Raiosha, Hiyoshi Campus, Keio University Examination of the Normally-off using the stack circuit
Kenji Sakamura (OPUGS), Kazutami Arimoto, Isao Kayano, Tomoyuki Yokogawa (OPU) VLD2017-70 CPSY2017-114 RECONF2017-58		 In the stack circuit using charge recycling, low consumption electricity such as the streaming processing movement is ef... [more] VLD2017-70 CPSY2017-114 RECONF2017-58
pp.49-51
SDM 2015-01-27
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Low power and high memory density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques
Kazutaka Ikegami, Hiroki Noguchi, Chikayoshi Kamata, Minoru Amano, Keiko Abe, Keiichi Kushida, Takao Ochiai, Naoharu Shimomura, Shogo Itai, Daisuke Saida, Chika Tanaka, Atsushi Kawasumi, Hiroyuki Hara, Junichi Ito, Shinobu Fujita (Toshiba) SDM2014-142		 Due to difficulty to increase clock frequency, recent processors increase cache memory to improve performance. However, ... [more] SDM2014-142
pp.29-32
MRIS, ITE-MMS 2013-07-12
16:35		 Tokyo Chuo Univ. Progress on STT MTJ writing Technology and the Effect on Normally-off Computing Systems
Junichi Ito, Hiroaki Yoda, Shinobu Fujita, Naoharu Shimomura, Eiji Kitagawa, Keiko Abe, Kumiko Nomura, Hiroki Noguchi (Toshiba) MR2013-13		 We propose a new processor using STT-MRAMs as cache memories. It enables “Normally-off computing”, where the processor i... [more] MR2013-13
pp.37-41
ICD, ITE-IST 2013-07-04
16:15		 Hokkaido San Refre Hakodate [Invited Talk] Low-Voltage Non-volatile Memory Devices Technology and System Application -- To Realize Zero Stand-by LSIs --
Masanori Hayashikoshi (Renesas Electronics) ICD2013-32		 Non-volatile memory devices typified by Flash memory has become a technology core for all industries. In this presentati... [more] ICD2013-32
pp.43-48
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