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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, SDM |
2007-06-25
13:00 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
[Invited Talk]
AlGaN/GaN Power Transistors for power switching applications
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) |
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more] |
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| MW, ED |
2007-01-19
14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transisto... [more] |
ED2006-235 MW2006-188
pp.193-197 |
| ED, MW |
2006-01-19
14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] |
ED2005-205 MW2005-159
pp.35-39 |
| LQE, ED, CPM |
2005-10-13
14:30 |
Shiga |
Ritsumeikan Univ. |
Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications
Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.) |
AlGaN/GaN HEMTs are attractive devices for high power switching applications because of their high electron mobility and... [more] |
ED2005-129 CPM2005-116 LQE2005-56
pp.51-56 |
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