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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric)  SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| US | 2014-02-21 15:05 |
Tokyo | Chofu Aerospace Center, Aerodrome Branch, JAXA | The Specific Heat Ratio of Hydrogen and Helium Measured using Ultrasonic Wave Tomohiro Hiramatsu, Sekiyo Katsu (Kyushu Univ.), Hideaki Fujita (Orii & Mec), Osamu Furukimi, Yoshimine Kato (Kyushu Univ.) US2013-108 |
Specific heat ratios of gases were measured successfully by using ultrasonic. The specific heat ratio was obtained by me... [more] | US2013-108 pp.75-79 |
| OME | 2013-12-17 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analysis of effective nitrogen chemical species in oxygen reduction catalysts made from iron cobalt complexes with pyridyl ligands as precursors Masakuni Takahashi, Hidenobu Shiroishi (Tokyo NCT), Morihiro Saito, Yumi Tanaka (Tokyo Univ. of Science) OME2013-78 |
Non-platinum oxygen reduction catalysts made from iron cobalt complexes with pyridyl ligands as precursors supported on ... [more] | OME2013-78 pp.7-12 |
| CPM, LQE, ED | 2013-11-28 16:40 |
Osaka | A novel method for crystallizations of aluminum nitride PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2013-75 CPM2013-134 LQE2013-110 |
In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been sy... [more] | ED2013-75 CPM2013-134 LQE2013-110 pp.51-55 |
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| SDM | 2013-10-18 10:00 |
Miyagi | Niche, Tohoku Univ. | A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 |
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] | SDM2013-93 pp.27-31 |
| LQE, LSJ | 2013-05-17 15:20 |
Ishikawa | Optical and spin properties of nitrogen-vacancy centers in diamond fabricated using nitrogen-doped isotopically-enriched chemical vapor deposition Tomohiro Gomi, Shuhei Tomizawa (Keio Univ.), Hideyuki Watanabe, Hitoshi Umezawa, Shin-ichi Shikata (AIST), Kohei M. Itoh, Junko Ishi-Hayase (Keio Univ.) LQE2013-12 |
An electronic spin state of nitrogen-vacancy (NV) centers in diamond is expected as an promising candidate for quantum i... [more] | LQE2013-12 pp.53-56 |
|
| QIT (2nd) |
2012-11-27 - 2012-11-28 |
Kanagawa | Keio Univ. Hiyoshi Campus | [Poster Presentation]
Entanglement Generation among electron and nuclear spins of NV center in Diamond at Room Temperature Takaaki Shimo-oka (Osaka Univ.), Hiromitsu Kato, Satoshi Yamasaki (AIST), Shinji Miwa, Yoshishige Suzuki, Norikazu Mizuochi (Osaka Univ.) |
The NV center’s spins show long coherence time and many related researches are reported. In this paper, we demonstrate... [more] |
|
| CPM | 2011-08-10 15:45 |
Aomori | Hydrogen effects on the properties of Si- and N-coincorporated diamond-like carbon films prepared by plasma-enhanced chemical vapor deposition Saori Okuno, Soshi Miura, Ryosuke Kamada, Hideki Nakazawa (Hirosaki Univ.) CPM2011-62 |
To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si- and N-coincorporated DLC (Si... [more] | CPM2011-62 pp.31-36 |
|
| EMD | 2010-11-11 09:30 |
Overseas | Xi'an Jiaotong University | Simulation of the influence of silver contact vapor on the DC arc behavior in a sealed relay Xue Zhou, Wenying Yang, Guofu Zhai (Harbin Inst. of Tech.) EMD2010-71 |
Species compositions of silver-nitrogen plasmas in temperature range of 3000-20000K were calculated by using the minimiz... [more] | EMD2010-71 pp.19-22 |
| ED | 2010-10-25 13:50 |
Kyoto | Field Emission Properties of Nitrogen-doped Diamond Related with C-N Bond Yuki Kudo (Univ. of Tsukuba/ICU), Tomoaki Masuzawa, Yusuke Sato (ICU), Ichitaro Saito (Univ. of Cambridge), Takatoshi Yamada (AIST), Angel Koh, Daniel. Chua (National Univ. of Singapore), Teruo Yoshino, W. J. Chun (ICU), Satoshi Yamasaki (AIST/Univ. of Tsukuba), Ken Okano (ICU) ED2010-130 |
Electron field emission measurement and Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) were carried out on ni... [more] | ED2010-130 pp.11-15 |
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| SDM | 2009-06-19 13:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34 |
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] | SDM2009-34 pp.45-50 |
| SDM | 2008-10-10 16:15 |
Miyagi | Tohoku Univ. | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] | SDM2008-167 pp.69-74 |
| SDM | 2007-06-08 09:50 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] | SDM2007-41 pp.55-58 |
| SDM | 2007-06-08 10:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] | SDM2007-42 pp.59-64 |
| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
| SDM | 2006-06-22 11:20 |
Hiroshima | Faculty Club, Hiroshima Univ. | Influence of Nitrogen and Hydrogen on NBTI in Ultrathin SiON Yuichiro Mitani, Hideki Satake (Toshiba Corp.) |
NBTI(Negative Bias Temperature Instability) has become increasingly serious in the context of effort to develop highly r... [more] | SDM2006-57 pp.87-92 |
| R, ED, SDM | 2005-11-25 15:30 |
Osaka | Central Electric Club | Electrical characterization of n-GaN exposed to hydrogen plasma Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
We have studied the electrical characteristics of n-GaN exposed to plasma. In the case of hydrogen plasma, the decrease ... [more] | R2005-45 ED2005-180 SDM2005-199 pp.43-46 |
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