| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-11-08 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)  SDM2019-74 |
We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials i... [more] | SDM2019-74 pp.27-32 |
| SCE | 2019-08-09 11:15 |
Ibaraki | National Institute of Advanced Industrial Science and Technology | Applicability of small Josephson Junction Arrays as Radiation Detectors Toshiki Suzuki, Kanyolo, Godwill Mbiti, Hiroshi Nishigaki, Yoshinao Mizugaki, Hiroshi Shimada (UEC) SCE2019-11 |
Arrays of small Josephson junctions exhibit a unique current-voltage characteristics known as Coulomb blockade. Experime... [more] | SCE2019-11 pp.15-19 |
| SDM | 2019-06-21 15:45 |
Aichi | Nagoya Univ. VBL3F | New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST) SDM2019-32 |
The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a c... [more] | SDM2019-32 pp.35-38 |
| MW | 2019-05-16 14:20 |
Osaka | Setunan Univ. | Microwave-DC Interconversion Using a Transmission Line Feedback Class F Oscillator with a Bipolar Transistor Minoru Sanagi, Ryusuke Wakayama (Okayama Univ.) MW2019-13 |
Experiments converting the microwave power to the DC power were carried out using a transmission line feedback class F o... [more] | MW2019-13 pp.19-24 |
| CAS, CS | 2019-03-09 14:35 |
Kanagawa | Shonan Institute of Technology | Analysis of Non-linearity on Heterojunction Bipolar Transistor Power Amplifiers for Mobile Phone Satoshi Tanaka (Murata) CAS2018-154 CS2018-122 |
In 5G (5th Generation) mobile phone, maximum modulation bandwidth is enlarged from100 to 400 MHz. In addition, complica... [more] | CAS2018-154 CS2018-122 pp.87-92 |
| LOIS | 2019-03-08 11:15 |
Okinawa | Miyakojima-shi Central Community Center | A Spam Review Detection Method with Verifying Consistency among Multiple Review Sites and Performance Evaluation Chuhao Yao, Jiahong Wang, Eiichiro Kodama (Iwate pu) LOIS2018-71 |
In recent years, internet sites such as Amazon, Rakuten and TABElog that have the user review information are widely use... [more] | LOIS2018-71 pp.91-96 |
| IN, NS (Joint) |
2019-03-04 10:30 |
Okinawa | Okinawa Convention Center | Load Balancing using Virtual Nodes Moving in Access Atempes Adaiotive for High Availabilty Distributed Clusters Takeshi Komatsu, Kiyoshi Ueda (Nihon Univ) NS2018-218 |
The session control server applied to the carrier's network should be highly available, highly reliable, have fault tole... [more] | NS2018-218 pp.147-151 |
| ITS, IE, ITE-MMS, ITE-HI, ITE-ME, ITE-AIT [detail] | 2019-02-20 09:45 |
Hokkaido | Hokkaido Univ. | Illumination Estimation Based on Photometric Registration Perception for AR Yuki Oyama, Hiroki Takahashi (UEC) ITS2018-74 IE2018-95 |
In AR technology, it is important to synthesize realistic images where users do not feel strange to them. In order to re... [more] | ITS2018-74 IE2018-95 pp.147-152 |
| SDM | 2019-01-29 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2018-81 |
In this paper, we clarified the multidomain dynamics of ferroelectric polarization in the Negative Capacitance Field-Eff... [more] | SDM2018-81 pp.1-4 |
| SDM | 2019-01-29 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82 |
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] | SDM2018-82 pp.5-8 |
| KBSE | 2019-01-26 16:05 |
Tokyo | NII | A Spam Review Detection Method with Verifying Consistency among Multiple Review Sites Chuhao Yao, Jiahong Wang, Eiichiro Kodama (Iwate pu) KBSE2018-51 |
In recent years, internet sites such as Amazon, Rakuten and TABElog that have the user review information are widely use... [more] | KBSE2018-51 pp.49-54 |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 11:00 |
Kyoto | Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77 |
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] | EID2018-4 SDM2018-77 pp.1-4 |
|
| ED, THz | 2018-12-18 09:00 |
Miyagi | RIEC, Tohoku Univ. | [Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] | ED2018-62 pp.35-38 |
| SDM | 2018-11-08 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Development and Education of Electron Devices assisted with Computer Simulation Ken Uchida (Univ. of Tokyo), Takahisa Tanaka (Keio Univ.) SDM2018-65 |
To develop nano-scale electronic devices, computer simulations in which quantum mechanical effects and detailed band str... [more] | SDM2018-65 pp.7-10 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| SDM | 2018-11-09 14:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST) SDM2018-74 |
We consider the method to simulate negative-capacitance field-effect transistors (NC FETs) harnessing negative capacitan... [more] | SDM2018-74 pp.47-52 |
| OPE, LQE, OCS | 2018-10-18 14:35 |
Saga | OCS2018-34 OPE2018-70 LQE2018-59 |
Transistor Laser (TL) has multiple modulation methods by a combination of terminal connection because it has three elect... [more] | OCS2018-34 OPE2018-70 LQE2018-59 pp.35-40 |
|
| SDM | 2018-10-17 15:20 |
Miyagi | Niche, Tohoku Univ. | Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] | SDM2018-54 pp.11-14 |
| SDM | 2018-06-25 14:00 |
Aichi | Nagoya Univ. VBL3F | [Invited Lecture]
Progress in Diamond Field Effect Transistors Hiroshi Kawarada, Nobutaka Oi, Bi Te, Shoichiro Imanishi, Masayuki Iwatakaki, Taichi Yabe, Atsushi Hiraiwa (Waseda Univ.) SDM2018-21 |
2 dimensional hole gas at diamond and insulator interface is used for field effect transistor (FET). High voltage (~2000... [more] | SDM2018-21 pp.23-28 |
| ED | 2018-04-19 13:55 |
Yamagata | Four-terminal measurement of organic transistors fabricated by reverse offset printing Gaku Tsuburaoka, Hiroyuki Matsui, Yasunori Takeda (Yamagata Univ.), Tomoko Okamoto, Kousuke Tanabe (DIC Corp.), Shizuo Tokito (Yamagata Univ.) ED2018-2 |
Printing high resolution electrodes is an important technology for realizing the high integration of sensing devices and... [more] | ED2018-2 pp.5-8 |
|
[Return to Top Page]