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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CAS, ICTSSL | 2021-01-28 09:55 |
Online | Online | On differential equations and numerical approximations of a nonlinear field effect transistor for LSTM neural networks Zhihui He, Cheng Wang, Moyong Hong, Kazuya Ozawa, Kaito Isogai, Hideaki Okazaki (Shonan Inst. Tech)  CAS2020-39 ICTSSL2020-24 |
In this report，we discuss how to build differential equations and numerical approximations of a nonlinear field effect t... [more] | CAS2020-39 ICTSSL2020-24 pp.7-10 |
| MW | 2020-12-10 13:40 |
Kanagawa | (Primary: On-site, Secondary: Online) |
High-Efficiency Wide-Dynamic-Power-Range Rectifier with Adaptive Self-Gate-Biasing Jun Yamazaki, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2020-72 |
In RF energy harvesting and wireless power transfer, it is required to develop rectifiers having wide dynamic range char... [more] | MW2020-72 pp.7-11 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 16:30 |
Online | Online | Ferroelectric gate thin film transistor using oxide semiconductor Ga-Sn-O Tomoki Fukui, Kouki Nakagawa, Mutsumi Kimura (Ryukoku Univ) EID2020-14 SDM2020-48 |
We fabricated a ferroelectric-gate thin-film transistor (FeTFT) with an amorphous Ga-Sn-O (GTO) channel and a ferroelect... [more] | EID2020-14 SDM2020-48 pp.54-57 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| SDM | 2020-10-22 15:50 |
Online | Online | Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21 |
In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shap... [more] | SDM2020-21 pp.34-39 |
| SIS, ITE-BCT | 2020-10-01 10:50 |
Online | Online | Target-color correction method based on multi-color balance Teruaki Akazawa, Yuma Kinoshita, Hitoshi Kiya (Tokyo Metro. Univ.) SIS2020-12 |
In this paper, we propose a target-color correction method for reducing color changes caused by the different of lightin... [more] | SIS2020-12 pp.11-16 |
| MSS, CAS, SIP, VLD | 2020-06-18 10:50 |
Online | Online | A Study on AM-AM/PM Characteristics of RF Power Amplifiers Satoshi Tanaka (Murata Manufacturing) CAS2020-3 VLD2020-3 SIP2020-19 MSS2020-3 |
In 5G (5th Generation) mobile phone, maximum modulation bandwidth is enlarged from 100 to 400 MHz addition, complicated ... [more] | CAS2020-3 VLD2020-3 SIP2020-19 MSS2020-3 pp.11-16 |
| MW | 2020-06-04 14:50 |
Online | Online | A Microwave Oscillator with a Bipolar Transistor in Common-Collector Mode Controlled Negative Resistance Hiroki Yamamoto, Minoru Sanagi (Okayama Univ.) MW2020-14 |
When a packaged bipolar transistor is operated in a common-collector mode, the negative resistance at the base is exhibi... [more] | MW2020-14 pp.17-22 |
| MWP | 2020-05-28 13:30 |
Online | Online | [Invited Talk]
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1 |
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] | MWP2020-1 pp.1-6 |
| SDM, OME | 2020-04-13 15:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | |
| SDM, OME | 2020-04-13 16:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Improving the characteristics of graphene TFT using graphene/Ni compound semiconductor hetero-junction Kazunori Ichikawa (NIT Matsue Col) |
We attempted to form graphene directly on an oxidized Ni layer and measurement of thin film transistor (TFT) with graphe... [more] | |
| SDM, OME | 2020-04-14 11:10 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Development of oxide thin-film transistors for large-sized flexible displays Hiroshi Tsuji, Mitsuru Nakata, Tatsuya Takei, Masashi Miyakawa, Yoshiki Nakajima, Takahisa Shimizu (NHK) |
Large-screen flexible displays using plastic substrates are promising candidates for 8K TV for home use due to their sup... [more] | |
| PRMU, IPSJ-CVIM | 2020-03-16 15:10 |
Kyoto | (Cancelled but technical report was issued) |
[Short Paper]
Feature Point Matching by Cycle Consistency Naoaki Noguchi, Furuta Ryosuke, Xueting Wang, Toshihiko Yamasaki, Kiyoharu Aizawa (UT) PRMU2019-74 |
(To be available after the conference date) [more] | PRMU2019-74 pp.51-52 |
| SDM | 2020-02-07 14:20 |
Tokyo | Tokyo University-Hongo | [Invited Talk]
Solution-processed interconnections using vacuum ultraviolet Takeo Minari, Wanli Li, Qingqing Sun, Lingying Li (NIMS), Xuying Liu (Zhengzhou Univ.), Masayuki Kanehara (C-INK) SDM2019-94 |
We propose new metallization methods based on "surface selective deposition" or "selective electroless plating". [more] | SDM2019-94 pp.27-30 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-23 15:15 |
Tottori | Tottori Univ. | [Invited Lecture]
Surface Treatment using Atomic Hydrogen for Semiconductor Process Akira Heya (Univ. of Hyogo) |
To realize flexible displays and sheet computers, we have tried to develop the novel surface treatment, named Atomic Hyd... [more] | |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-24 11:10 |
Tottori | Tottori Univ. | [Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) EID2019-16 |
(To be available after the conference date) [more] | EID2019-16 pp.129-131 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| ED, THz [detail] | 2019-12-23 16:45 |
Miyagi | GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] | ED2019-83 pp.29-32 |
|
| OME | 2019-12-20 13:00 |
Saga | avancée (Saga city) | Carbon-bridged Oligo(phenylenevinylene)s (COPV6) Single-Electron Transistor based on Electroless Au-plated (ELGP) Nanogap Electrodes Rikiya Irie, Chun Ouyang, Yuma Ito, Phan Trong Tue (Tokyo Tech), Hayato Tsuji (Kanagawa Unib), Eiichi Nakamura (Univ. Tokyo), Yutaka Majima (Tokyo Tech) OME2019-37 |
Molecular transistors have been studied for 50 years, however electrical contacts to a single-molecule have been the iss... [more] | OME2019-37 pp.9-12 |
| OME | 2019-12-20 16:35 |
Saga | avancée (Saga city) | Highly Sensitive Detection of Proteins by Organic Transistors Functionalized with Metal Complex-Type Artificial Receptors Tsukuru Minamiki, Koichiro Asano, Yui Sasaki, Riku Kubota, Tsuyoshi Minami (Univ. Tokyo) OME2019-46 |
Protein sensors with artificial receptors are still a challenging task despite their attractive features such as chemica... [more] | OME2019-46 pp.45-48 |
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