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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2019-01-25
10:40
Kagoshima Kagoshima University [Poster Presentation] Improvement of luminescent characteristics by atmospheric post-annealing for Y4Si2O7N2:Eu3+ red phosphor synthesized in NH3
Kodai Nakamoto, Misa Kawashima, Ken Kinoshita, Yuichiro Hatanaka, Tadashi Ishigaki (Tottori Unv.), Takashi Kunimoto (Tokushima Bunri Univ.), Tetsuo Honma (JASRI), Koutoku Ohmi (Tottori Unv.) EID2018-16
Y4Si2O7N2:Eu3+ phosphor has been synthesized in an NH3 atmosphere. The synthesized sample shows a red emission due to Eu... [more] EID2018-16
pp.109-112
CPM 2011-10-27
10:45
Fukui Fukui Univ. MOVPE growth of InN using NH3 decomposition catalyst
Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] CPM2011-121
pp.59-62
SDM 2007-12-14
15:10
Nara Nara Institute Science and Technology Interface modification by NH3 plasma in SiNx passivation for solar cell
Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232
The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing proces... [more] SDM2007-232
pp.43-46
CPM 2005-11-12
09:50
Fukui   Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD
Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser... [more] CPM2005-163
pp.9-12
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