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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2019-01-25 10:40 |
Kagoshima |
Kagoshima University |
[Poster Presentation]
Improvement of luminescent characteristics by atmospheric post-annealing for Y4Si2O7N2:Eu3+ red phosphor synthesized in NH3 Kodai Nakamoto, Misa Kawashima, Ken Kinoshita, Yuichiro Hatanaka, Tadashi Ishigaki (Tottori Unv.), Takashi Kunimoto (Tokushima Bunri Univ.), Tetsuo Honma (JASRI), Koutoku Ohmi (Tottori Unv.) EID2018-16 |
Y4Si2O7N2:Eu3+ phosphor has been synthesized in an NH3 atmosphere. The synthesized sample shows a red emission due to Eu... [more] |
EID2018-16 pp.109-112 |
CPM |
2011-10-27 10:45 |
Fukui |
Fukui Univ. |
MOVPE growth of InN using NH3 decomposition catalyst Dazio Hironaga, Kenichi Sugita, A.g. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ.of Fukui) CPM2011-121 |
In order to increase the NH3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been propo... [more] |
CPM2011-121 pp.59-62 |
SDM |
2007-12-14 15:10 |
Nara |
Nara Institute Science and Technology |
Interface modification by NH3 plasma in SiNx passivation for solar cell Yuki Kishiyama, Yu Takahashi, Akiyoshi Ogane, Athapol Kitiyanan, Yukiharu Uraoka, Takashi Fuyuki (NAIST) SDM2007-232 |
The effect of NH3 plasma treatment on p-type (Fz) Si substrates was investigated relating with the post annealing proces... [more] |
SDM2007-232 pp.43-46 |
CPM |
2005-11-12 09:50 |
Fukui |
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Photocatalytic H2S decomposition by InN1-xOx films grown by ArF laser-assisted MOCVD Masayoshi Miyanishi (Univ. of Fukui), Naoya Takahashi (Fukui NCT), Takahiro Kobayashi (Univ. of Fukui), Katsumi Takayama (Fukui NCT), Yukio Nambo (Nicca), Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) |
An InN1-xOx, which is an alloy of InN with In2O3, is grown at a low (RT-500ºC) temperature by the ArF excimer laser... [more] |
CPM2005-163 pp.9-12 |
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