IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 77 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Error Pattern Analysis among Scaled Generations of NAND Flash Memories
Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi (Chuo Univ.) ICD2016-69 CPSY2016-75
The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory ce... [more] ICD2016-69 CPSY2016-75
p.57
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Error Analysis of NAND Flash Memories for Long-Term Storage
Kyoji Mizoguchi, Tomonori Takahashi, Seiichi Aritome, Ken Takeuchi (Chuo Univ.) ICD2016-72 CPSY2016-78
Recently, a digital data on art, culture and history which required data-retention (DR) time from 10 to 100 years or mor... [more] ICD2016-72 CPSY2016-78
p.63
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories
Toshiki Nakamura, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) ICD2016-73 CPSY2016-79
The capacity of NAND flash memory can be expanded by multi-level cell technology. In particular, 3-bit/cell triple-level... [more] ICD2016-73 CPSY2016-79
p.65
ICD, CPSY 2016-12-15
15:30
Tokyo Tokyo Institute of Technology [Poster Presentation] Reduction of Data-Retention Error in TLC NAND Flash Memories
Yuichi Sato, Yoshiaki Deguchi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2016-76 CPSY2016-82
The cost of NAND flash memory is reduced by scaling and multi-level cell technologies. However, the reliability of tripl... [more] ICD2016-76 CPSY2016-82
p.75
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]
2016-11-29
09:25
Osaka Ritsumeikan University, Osaka Ibaraki Campus Optimal configuration design of SCM and MLC/TLC NAND flash memory in semiconductor storage system
Chihiro Matsui, Yusuke Yamaga, Yusuke Sugiyama, Ken Takeuchi (Chuo Univ.) CPM2016-77 ICD2016-38 IE2016-72
In order to manage wide variety of data at high speed, a tri-hybrid storage system has been proposed with using storage ... [more] CPM2016-77 ICD2016-38 IE2016-72
pp.7-10
VLD, CPSY, RECONF, IPSJ-SLDM, IPSJ-ARC [detail] 2016-01-21
11:20
Kanagawa Hiyoshi Campus, Keio University An Architectural Optimization for Software Defined SSD using Full System Simulator
Shun Gokita, Satoshi Kazama, Seiki Shibata, Shinya Kuwamura, Eiji Yoshida, Junji Ogawa (FLL) VLD2015-103 CPSY2015-135 RECONF2015-85
In recent years, a kind of software-defined SSD which has a Flash control layer (FTL) in software teared out of hardware... [more] VLD2015-103 CPSY2015-135 RECONF2015-85
pp.197-202
DC 2015-12-18
14:00
Niigata Kurieito Mulakami (Murakami City) Error Correcting Codes Considering P/E Cycles for NAND Flash Memories
Mampei Asai, Masato Kitakami (Chiba Univ.) DC2015-76
I Recently, multi-level cell (MLC) NAND flash memory, which has memory cells capable to store 2 or more bits of informat... [more] DC2015-76
pp.17-22
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Performance Evaluation of Solid-State-Drives (SSDs) by Considering the effect of Error-correcting code
Yusuke Yamaga, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-71 CPSY2015-84
In the NAND flash memory based solid-state drives (SSDs), reliability is guaranteed by error correcting code (ECC). Conv... [more] ICD2015-71 CPSY2015-84
p.41
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] The Evaluation of Hybrid SSD performance Dependency on the Data Acces pattern
Yusuke Sugiyama, Tomoaki Yamada, Ken Takeuchi (Chuo univ.) ICD2015-72 CPSY2015-85
Hybrid Solid-state drive (SSD) is comprised of NAND flash memory and storage class memory (SCM). Since the performance o... [more] ICD2015-72 CPSY2015-85
p.43
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Reliability Evaluation of Privacy Protection with NAND Flash Memories
Kazuki Maeda, Hiroki Yamazawa, Ken Takeuchi (Chuo Univ.) ICD2015-74 CPSY2015-87
Recently, Internet-data’s “Right to be forgotten” has been established for the privacy protection of personal informatio... [more] ICD2015-74 CPSY2015-87
p.47
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Bit-Error Analysis in TLC NAND flash memories.
Yoshiaki Deguchi, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-75 CPSY2015-88
The capacity of NAND flash memory can be expanded by increasing the bit density. In particular, 3-bit/cell triple-level ... [more] ICD2015-75 CPSY2015-88
p.49
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Error Tendency Analysis in NAND Flash Memory
Yoshio Nakamura, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2015-76 CPSY2015-89
Program-disturb and data-retention degrade the reliability of NAND flash memory. During program-disturb, VTH of the memo... [more] ICD2015-76 CPSY2015-89
p.51
ICD, CPSY 2015-12-17
16:00
Kyoto Kyoto Institute of Technology [Poster Presentation] Error Pattern Analysis of Long-Term Storage with NAND Flash Memory
Tomonori Takahashi, Senju Yamazaki, Ken Takeuchi (Chuo Univ.) ICD2015-77 CPSY2015-90
NAND flash memory has advantages of fast access speed and high density compared with other storage devices such as hard ... [more] ICD2015-77 CPSY2015-90
p.53
CPSY, DC, IPSJ-ARC
(Joint) [detail]
2015-08-05
16:15
Oita B-Con Plaza (Beppu) Fragmentation-aware Write Optimization for Flash SSDs
Shugo Ogawa, Takuya Araki (NEC) CPSY2015-32
Flash SSDs are becoming available to the purpose of storing stream data from many devices with an increase in capacity a... [more] CPSY2015-32
pp.173-178
ICD 2015-04-16
16:05
Nagano   [Invited Lecture] A Low-Power 64Gb MLC NAND-Flash Memory in 15nm CMOS Technology
Mario Sako, Takao Nakajima, Junpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Yoshinao Suzuki, Yoshihisa Watanabe (Toshiba), Ryuji Yamashita (SanDisk) ICD2015-6
A 75mm2 low power 64Gb MLC NAND flash memory capable of 30MB/s program throughput and 533MB/s data transfer rate at 1.8V... [more] ICD2015-6
pp.27-30
NS 2015-01-23
12:50
Tokyo Hachijo-cho-City-Hall An energy saving method for mobile devices by utilizing flash storage and a TCP/IP offload wireless LAN interface
Hiroshi Nishimoto, Yuichiro Oyama, Takaomi Murakami, Takeshi Ishihara, Kotaro Ise (Toshiba) NS2014-170
Energy consumption during wireless communication has been a significant issue for mobile devices such as smart phones an... [more] NS2014-170
pp.45-50
ICD, CPSY 2014-12-01
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Poster Presentation] A High-Performance Solid-State Drives with LBA Scrambler
Tomoaki Yamada, Chao Sun, Ken Takeuchi (Chuo Univ.) ICD2014-87 CPSY2014-99
In the NAND flash memory based Solid-state drives (SSDs), since in-place overwrite is prohibited in NAND flash, the oper... [more] ICD2014-87 CPSY2014-99
p.53
ICD, CPSY 2014-12-01
15:15
Tokyo Kikai-Shinko-Kaikan Bldg. [Poster Presentation] Performance Analysis of the Hybrid SSDs in Consideration of Error-correcting code
Hirofumi Takishita, Shuhei Tanakamaru, Takahiro Onagi, Ken Takeuchi (Chuo Univ) ICD2014-88 CPSY2014-100
The performance of SSDs is guaranteed by error-correcting code (ECC). The longer parity size of ECC is, the higher error... [more] ICD2014-88 CPSY2014-100
p.55
CPSY 2014-10-10
13:25
Chiba Meeting Room 303, International Conference Hall, Makuhari-Messe Theoretical Write Amplification Analysis of the SSD
Shin-ichi Kanno, Hiroshi Yao (TOSHIBA), Daisuke Hashimoto (TAEC) CPSY2014-51
Theoretical limitation of write amplification and write speed of solid state drives (SSDs) are affected by page size and... [more] CPSY2014-51
pp.25-30
ICD 2014-04-17
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 66.3KIOPS-Random-Read 690MB/s-Sequential-Read Universal Flash Storage Device Controller with Unified Memory Extension
Kenichiro Yoshii, Konosuke Watanabe, Nobuhiro Kondo, Kenichi Maeda, Toshio Fujisawa, Junji Wadatsumi, Daisuke Miyashita, Shouhei Kousai, Yasuo Unekawa, Shinsuke Fujii, Takuma Aoyama, Takayuki Tamura, Atsushi Kunimatsu, Yukihito Oowaki (Toshiba) ICD2014-2
The world’s first embedded NAND storage device controller with Unified Memory (UM) has been demonstrated. UM achieves 2 ... [more] ICD2014-2
pp.3-8
 Results 21 - 40 of 77 [Previous]  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan