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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 69 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-11-08
10:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Fundamental Aspects of Semiconductor Device Modeling Associated with Discrete Impurities II -- Random Dopants under Semiconductor Nano-structures --
Nobuyuki Sano (Univ. Tsukuba) SDM2019-75
Theoretical modeling of discrete impurities under the framework of device simulations plays a crucial role in analyzing ... [more] SDM2019-75
pp.33-38
IA 2019-09-06
09:40
Hokkaido Hokkaido Univ. Humanities and Social Sciences Classroom Bldg, W102 Characteristic Analysis of Constrained Random WayPoint Mobility Model on Graph
Ryota Sakaguchi, Daiki Matsui, Ryo Nakamura, Hiroyuki Ohsaki (Kwansei Gakuin Univ.) IA2019-16
Graph traversal is one of fundamental problems in discrete
mathematics since it has a broad range of applications in di... [more]
IA2019-16
pp.27-32
IA 2019-09-06
10:05
Hokkaido Hokkaido Univ. Humanities and Social Sciences Classroom Bldg, W102 A Study on Modeling Branching Random Walk on Random Regular Graph
Takuro Mayaguchi, Ryota Sakaguchi, Hiroyuki Ohsaki (Kwansei Gakuin Univ.) IA2019-17
Several popular problems in information networking and social networking such as search, distribution, and dis- seminati... [more] IA2019-17
pp.33-37
ED, LQE, CPM 2018-11-29
14:15
Aichi Nagoya Inst. tech. Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing
Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.) ED2018-35 CPM2018-69 LQE2018-89
In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconducto... [more] ED2018-35 CPM2018-69 LQE2018-89
pp.13-16
CQ, ICM, NS, NV
(Joint)
2018-11-16
10:05
Ishikawa   A consideration of server virtualization for mobility in edge computing
Hiroaki Yamanaka, Eiji Kawai, Yuuichi Teranishi, Hiroaki Harai (NICT) CQ2018-71
In edge computing environment, edge servers close to end-user devices need to serve them, to achieve low-latency respons... [more] CQ2018-71
pp.43-48
SDM 2018-11-09
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] SDM2018-71
pp.35-40
KBSE, SS, IPSJ-SE [detail] 2018-07-20
10:30
Hokkaido   Development and Operation of Services for Open Smart Mobility Markets -- Architecture Strategy and Service Supply Chain Management --
Tsuneo Nakanishi (Fukuoka Univ.), Kenji Hisazumi, Takao Ando, Tsunenori Mine, Akira Fukuda (Kyushu Univ.) SS2018-15 KBSE2018-25
The article discusses an architectural strategy to develop and operate information services in the open, dynamic smart m... [more] SS2018-15 KBSE2018-25
pp.183-188
PRMU, MI, IE, SIP 2018-05-17
13:30
Gifu   [Invited Talk] Large-Scale Graph Analysis and Development of Urban OS -- Cyber-physical System and Industrial Applications of Mathematical Models for Mobility --
Katsuki Fujisawa (Kyushu Univ.) SIP2018-1 IE2018-1 PRMU2018-1 MI2018-1
In this talk, we present our ongoing research project. The objective of many ongoing research projects in high performan... [more] SIP2018-1 IE2018-1 PRMU2018-1 MI2018-1
p.1
RCS 2016-04-21
15:15
Aomori Romantopia, A Landscape of Forest and Stars, Hirosaki City Hybrid Automatic Operation of a Motor Vehicle with the Telecommunication
Takeharu Kohri (SIST) RCS2016-4
Autonomous automatic operation with each sensor collects topics after Urban Challenge 2007 holding of DARPA sponsorship ... [more] RCS2016-4
pp.19-24
IE, IMQ, MVE, CQ
(Joint) [detail]
2016-03-07
09:30
Okinawa   Evaluation of influence of a mobility model based on person trip data on DTN routing
Akio Ishikura, Jun Kawahara, Masahiro Sasabe, Shoji Kasahara (NAIST) CQ2015-110
In delay tolerant networking (DTN), data communication is realized even if interruption or disruption occurs. When we ev... [more] CQ2015-110
pp.13-18
ED 2015-12-21
15:00
Miyagi RIEC, Tohoku Univ Extraction of intrinsic parameters in graphene-channel FET
Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] ED2015-95
pp.25-30
CQ, CS
(Joint)
2015-04-22
11:35
Fukuoka Fukuoka Institute of Technology vBS on the Move: Providing the Service-speci_c Connectivity for Nomadic Terminals in a WiFi Network
Kiyohide Nakauchi, Yozo Shoji, Nozomu Nishinaga (NICT) CQ2015-11
This paper proposes a virtual Base Station (vBS) migration technique, namely "vBS on the Move", for continually providin... [more] CQ2015-11
pp.57-62
NC, MBE 2015-03-17
14:35
Tokyo Tamagawa University Implementing Action Estimation Model of Pedestrian for Collision Avoidance between Personal Mobility and Person
Hiroaki Yoshioka, Kensuke Miyamoto (Keio Univ.), Junya Imani, Norifumi Watanabe (TUT), Yoshiyasu Takefuji (Keio Univ.) MBE2014-176 NC2014-127
We have implemented the personal mobility performing semiautonomous control by estimating the avoidance direction of ped... [more] MBE2014-176 NC2014-127
pp.337-342
SDM, EID 2014-12-12
10:00
Kyoto Kyoto University Shape and Size Effects on Hole Mobility of Rectangular Cross-sectional Ge Nanowires
Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) EID2014-13 SDM2014-108
We calculated the phonon-limited hole mobility of Ge nanowires with rectangular cross sections based on atomistic method... [more] EID2014-13 SDM2014-108
pp.1-6
VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM
(Joint) [detail]
2014-11-28
14:45
Oita B-ConPlaza A Study of Power Optimization for Asynchronous Circuits with Bundled-data Implementation using Mobility of Operations
Shunya Hosaka, Hiroshi Saito (Univ. Aizu) VLD2014-104 DC2014-58
In this paper, we study a dynamic power optimization method for asynchronous circuits with bundled-data implementation u... [more] VLD2014-104 DC2014-58
pp.215-220
IN, MoNA
(Joint)
2014-11-19
12:05
Yamaguchi Simonosekishi-Kinro-Fukushi-Kaikan A Study on Autonomous and Distributed Mobility Management Scheme in Mobile Networks -- Proposal and Evaluation of Mobility Management Scheme based on Attractor Selection Model --
Hua Yang, Naoki Wakamiya, Masayuki Murata (Osaka Univ.), Takanori Iwai, Satoru Yamano (NEC) IN2014-90
In recent years, discussion, research, and development on the 5th generation mobile and wireless communication systems h... [more] IN2014-90
pp.51-56
SDM 2014-11-06
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Device simulation -- More than 30 years in Toshiba's TCAD --
Naoyuki Shigyo (Toshiba) SDM2014-100
TCAD is one of important tools for designing a semiconductor device. As a virtual fabrication, TCAD contributes to reduc... [more] SDM2014-100
pp.25-30
NS 2014-10-16
15:50
Shimane Matsue Terrsa A Mobility Scenario Derivation Algorithm for Mobility Model Representing Change of Node Density
Takahiro Shigeta, Eitaro Kohno, Yoshiaki Kakuda (Hiroshima City Univ.) NS2014-117
 [more] NS2014-117
pp.75-80
CAS 2014-02-07
13:30
Kanagawa Nippon Maru Training center A probe epidemic transmission considering mobility characteristics of nodes in DTNs
Shigeto Sawabe, Arata Kato, Naoyuki Karasawa, Keisuke Nakano (Niigata Univ.) CAS2013-87
In this report, we consider communication characteristics of the probe epidemic transmission in Delay Tolerant Network w... [more] CAS2013-87
pp.71-74
SDM 2014-01-29
10:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
 Results 21 - 40 of 69 [Previous]  /  [Next]  
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