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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
| SDM, ED (Workshop) |
2012-06-27 17:15 |
Okinawa | Okinawa Seinen-kaikan | A 0.5-V 2.4-GHz CMOS Voltage-Controlled Oscillator for Wireless Sensor Network Application Seunghyeon Kim, Hyunchol Shin (Kwangwoon Univ.) |
A 0.5-V 2.4-GHz CMOS voltage-controlled oscillator is designed for wireless sensor network applications. It is based on ... [more] | |
| SDM, ED (Workshop) |
2012-06-29 09:15 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
III-V/Ge integration on Si platform for electronic-photonic integrated circuits Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) |
We have investigated heterogeneous integration of III-Vs and Ge on the Si platform for electronics and photonics. Owing ... [more] | |
| SDM, ED (Workshop) |
2012-06-29 09:45 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, Univ. of Tokyo) |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation CMOS with maximum power efficiency can... [more] | |
| SDM, ED (Workshop) |
2012-06-29 10:15 |
Okinawa | Okinawa Seinen-kaikan | Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel Min-Chul Sun (SNU and SEC), Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (SNU) |
A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is... [more] | |
| SDM, ED (Workshop) |
2012-06-29 11:15 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Thermal-Aware Device Desing of Nanoscale MOS Transistors Ken Uchida (Keio Univ.), Tsunaki Takahashi, Nobuyasu Beppu (Tokyo Tech) |
The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that... [more] | |
| SDM, ED (Workshop) |
2012-06-29 11:45 |
Okinawa | Okinawa Seinen-kaikan | Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) |
Distribution of current onset voltage (COV) as well as threshold voltage (VTH) and drain induced barrier lowering (DIBL)... [more] | |
| SDM | 2012-06-21 10:20 |
Aichi | VBL, Nagoya Univ. | High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] | SDM2012-47 pp.23-26 |
| EMD | 2012-03-02 16:00 |
Tokyo | Tanagawa Univ. | Development of Low-Pass-Filter with Voltage Variable Cutoff Frequency Goh Kobayashi, Yoshiki Kayano, Hiroshi Inoue (Akita Univ.) EMD2011-138 |
A wideband variable frequency oscillator (Voltage Controlled Oscillator) can be used in the area of signal processing. T... [more] | EMD2011-138 pp.49-52 |
| ED, SDM | 2012-02-07 14:10 |
Hokkaido | Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) ED2011-143 SDM2011-160 |
Dopant-induced fluctuation of MOSFET characteristics along with device miniaturization has been recognized as a serious ... [more] | ED2011-143 SDM2011-160 pp.7-11 |
|
| VLD, CPSY, RECONF, IPSJ-SLDM [detail] | 2012-01-26 16:40 |
Kanagawa | Hiyoshi Campus, Keio University | Study of pattern area and reconfigurable logic circuit with DG/CNT transistor Takamichi Hayashi, Shigeyoshi Watanabe (SIT) VLD2011-119 CPSY2011-82 RECONF2011-78 |
Pattern area for 2~6 input reconfigurable logic circuit with double-gate (DG), Carbon-Nano-Tube (CNT), double-gate and C... [more] | VLD2011-119 CPSY2011-82 RECONF2011-78 pp.163-168 |
| ED, MW | 2012-01-11 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Distortion Compensation of Class-E Power Amplifier Modulating Envelope Pulse Width for Quadrature Amplitude Modulation Signal Shota Fujioka, Yohtaro Umeda (Tokyo Univ. of Sience), Osamu Takyu (Shinshu Univ.) ED2011-126 MW2011-149 |
Transmitter in wireless communication is required to be efficient, linearity, low distortion. Envelope Pulse Width Modul... [more] | ED2011-126 MW2011-149 pp.41-46 |
| ED, MW | 2012-01-12 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Study of source charging time in InGaAs MOSFET Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech) ED2011-129 MW2011-152 |
When ballistic transportation of electrons in the channel of MOSFET is realized by channel shrinkage, drain current is c... [more] | ED2011-129 MW2011-152 pp.59-62 |
| OME | 2011-12-21 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Low Operation Voltage Organic Transistors on Shape-Memory Film with Planarization Yu Kato (Univ. of Tokyo), Tsuyoshi Sekitani (Univ. of Tokyo/JST), Tomoyuki Yokota, Kazunori Kuribara (Univ. of Tokyo), Ute Zschieschang, Hagen Klauk (Max Planck Inst.), Tatsuya Yamamoto, Kazuo Takimiya (Hiroshima Univ.), Masaaki Ikeda, Hirokazu Kuwabara (Nippon Kayaku), Takao Someya (Univ. of Tokyo/JST) OME2011-70 |
We fabricated low operation voltage organic transistors on shape-memory film which memorizes its shape by applying heat ... [more] | OME2011-70 pp.23-28 |
| SDM | 2011-11-10 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-117 pp.11-15 |
| SDM | 2011-10-20 16:10 |
Miyagi | Tohoku Univ. (Niche) | [Special Talk]
Science Based New Silicon Technologies Tadahiro Ohmi (Tohoku Univ.) SDM2011-102 |
Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] | SDM2011-102 pp.27-36 |
| CAS, NLP | 2011-10-21 13:30 |
Shizuoka | Shizuoka Univ. | Compensation of Voltage Unbalance in Series-Connected Voltage Balancing Circuit with Voltage Balance Monitor Toshiki Kishi, Yohtaro Umeda (TUS) CAS2011-55 NLP2011-82 |
In recent years, design of driver circuits for optical modulator in fiber-optic communication system or light emitting d... [more] | CAS2011-55 NLP2011-82 pp.129-134 |
| SDM, ICD | 2011-08-25 09:50 |
Toyama | Toyama kenminkaikan | Study of pattern area for reconfigurable logic circuit with DG/CNT transistor Takamichi Hayashi, Shigeyoshi Watanabe (SIT) SDM2011-73 ICD2011-41 |
Pattern area for 2~6 input reconfigurable logic circuit with double-gate (DG), Carbon-Nano-Tube (CNT), double-gate and C... [more] | SDM2011-73 ICD2011-41 pp.13-16 |
| SDM, ICD | 2011-08-25 10:25 |
Toyama | Toyama kenminkaikan | Power-Performance Estimation of Datta-Das Spin Transistor Yoshiyuki Kondo, Shigeru Kawanaka, Kanna Adachi (Toshiba) SDM2011-74 ICD2011-42 |
We report the results of power-performance analysis of Datta-Das spin transistor(SFET) in this paper. We clarified it... [more] |
SDM2011-74 ICD2011-42 pp.17-22 |
| SDM, ICD | 2011-08-26 09:50 |
Toyama | Toyama kenminkaikan | Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53 |
A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] | SDM2011-85 ICD2011-53 pp.75-78 |
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