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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2014-11-26 16:15 |
Oita | B-ConPlaza | High speed design of sub-threshold circuit by using DTMOS Yuji Fukudome, Youhua Shi, Nozomu Togawa (Waseda Univ.), Kimiyoshi Usami (Shibaura Inst. of Tech), Masao Yanagisawa (Waseda Univ.)  VLD2014-88 DC2014-42 |
Low power consumption is achieved by operating circuits in sub-threshold region. However, in sub-threshold region, the... [more] |
VLD2014-88 DC2014-42 pp.117-121 |
| IE, ICD, VLD, IPSJ-SLDM [detail] | 2014-10-02 16:15 |
Miyagi | A Low Supply Voltage Six-Transistor CMOS SRAM Employing Adaptively Lowering Memory Cell Supply Voltage for "Write" Operation Nobuaki Kobayashi (Nagaoka Univ. of Tech.), Ryusuke Ito, Tadayoshi Enomoto (Chuo Univ.) VLD2014-66 ICD2014-59 IE2014-45 |
We developed and applied a new circuit, called the “Self-controllable Voltage Level (SVL)” circuit, not only to expand b... [more] | VLD2014-66 ICD2014-59 IE2014-45 pp.33-38 |
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| ICD, SDM | 2014-08-05 10:25 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | Development of a Low Standby Power, Six-Transistor CMOS SRAM Employing a Single Power Supply Ryusuke Ito (Chuo Univ.), Nobuaki Kobayashi (NUT), Tadayoshi Enomoto (Chuo Univ.) SDM2014-73 ICD2014-42 |
We developed and applied a new circuit, called the “Self-controllable Voltage Level (SVL)” circuit, not only to expand b... [more] | SDM2014-73 ICD2014-42 pp.59-64 |
| ICD, SDM | 2014-08-05 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Oxide Semiconductor-based Transistors Formed in LSI Interconnects Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45 |
We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] | SDM2014-76 ICD2014-45 pp.77-82 |
| SDM | 2014-06-19 14:05 |
Aichi | VBL, Nagoya Univ. | Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] | SDM2014-53 pp.55-58 |
| CPM, ED, SDM | 2014-05-28 16:10 |
Aichi | Static and dynamic operations of MOSFET by propagated surface plasmon signal Hiroki Sakai, Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Masashi Ota, Yu Kimura, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) ED2014-28 CPM2014-11 SDM2014-26 |
Surface plasmon polaritons (SPPs) have attracted considerable attention as a means of increasing integration density of ... [more] | ED2014-28 CPM2014-11 SDM2014-26 pp.51-54 |
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| ED | 2014-04-18 09:00 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Fabrication of Fully Solution-processed Organic Thin-Film Transistor and Application to Integrated Circuits Yasunori Takeda, Yu Kobayashi (Yamagata Univ.), Faiz Adi Ezarudin Bin Adib (SATO HOLDINGS), Kenjiro Fukuda, Daisuke Kumaki, Shizuo Tokito (Yamagata Univ.) ED2014-11 |
Organic Thin Film Transistor (OTFT) is very attractive for a varied range of applications such as flexible display, and ... [more] | ED2014-11 pp.41-45 |
| VLD | 2014-03-03 14:30 |
Okinawa | Okinawa Seinen Kaikan | nMOS Dynamic Shift Registers for Driver Circuit of Small LCD and Their Evaluations Shinji Higa, Tomohiro Kurita, Shuji Tsukiyama (Chuo Univ.) VLD2013-137 |
Driver circuits for small LCD (Liquid Crystal Display) are formed on the same glass substrate as LCD by means of TFTs (T... [more] | VLD2013-137 pp.19-24 |
| SDM | 2014-01-29 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Analysis of Transistor Characteristics in Distribution Tails beyond ±5.4σ of 11 Billion Transistors Tomoko Mizutani, Anil Kumar, Toshiro Hiramoto (Univ. of Tokyo) SDM2013-142 |
Transistors in distribution tails of 11G (11 billion) transistors were intensively measured and compared with transistor... [more] | SDM2013-142 pp.31-34 |
| MWP, EMT, PN, LQE, OPE, EST, IEE-EMT [detail] | 2014-01-24 17:00 |
Kyoto | Doshisha University | Static and dynamic characteristics of surface plasmon detector-MOSFET integrated circuit Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, Mitsuo Fukuda (Toyohashi Univ. of Tech.) PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 |
Optical interconnections (OIs) in integrated circuits have been developed for high-speed and large-capacity date-process... [more] | PN2013-82 OPE2013-196 LQE2013-182 EST2013-131 MWP2013-102 pp.303-306 |
| ED, MW | 2014-01-16 11:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Depletion-mode gallium oxide metal-oxide-semiconductor field-effect transistors fabricated by using Si-ion implantation Masataka Higashiwaki (NICT), Kohei Sasaki (Tamura/NICT), Man Hoi Wong, Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura), Takekazu Masui (Koha), Shigenobu Yamakoshi (Tamura) ED2013-116 MW2013-181 |
Depletion-mode gallium oxide (Ga2O3) MOSFETs were fabricated on single-crystal beta-Ga2O3 (010) substrates. We applied S... [more] | ED2013-116 MW2013-181 pp.35-39 |
| SDM | 2013-11-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] | SDM2013-111 pp.65-70 |
| SDM, ICD | 2013-08-02 16:05 |
Ishikawa | Kanazawa University | Input common-mode voltage of the opamp improved wide-area by bulk-control Mamoru Ohsawa, Cong-Kha Pham (UEC) SDM2013-85 ICD2013-67 |
We examine the wide area of the common-mode input voltage range of the op amp that operates at low power supply voltage... [more] |
SDM2013-85 ICD2013-67 pp.105-110 |
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| MW | 2013-03-06 10:25 |
Hiroshima | Hiroshima Univ. | A High Power CMOS Cascode Transistor with distributed grounded gate capacitor Katsuya Kato, Miyo Miyashita, Shintaro Shinjo, Kenichi Horiguchi, Kazutomi Mori (Mitsubishi Electric) MW2012-159 |
We propose a high power CMOS cascode transistor with distributed grounded gate capacitor using 0.18-um CMOS technology. ... [more] | MW2012-159 pp.7-10 |
| MW | 2013-03-08 11:20 |
Hiroshima | Hiroshima Univ. | [Special Invited Talk]
Current Status and Future Prospect for Analog and RF CMOS Integrated Circuits Akira Matsuzawa (Tokyo Inst. of Tech.) MW2012-185 |
Current status and future prospect for analog and RF CMOS integrated circuits will be discussed. The physical relationsh... [more] | MW2012-185 p.147 |
| SDM, ED | 2013-02-28 09:00 |
Hokkaido | Hokkaido Univ. | Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] | ED2012-137 SDM2012-166 pp.47-52 |
| ICD, SDM | 2012-08-02 10:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33 |
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] | SDM2012-65 ICD2012-33 pp.13-16 |
| ICD, SDM | 2012-08-02 13:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | [Invited Lecture]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36 |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] | SDM2012-68 ICD2012-36 pp.29-32 |
| ICD, ITE-IST | 2012-07-26 14:20 |
Yamagata | Yamagata University | [Invited Talk]
Smart Power LSI Technology Development
-- High Performance and High Reliability BiC-DMOS Device Development -- Kenichi Hatasako, Tetsuya Nitta, Masami Hane, Shigeto Maegawa (Renesas Electronics Co.) ICD2012-23 |
This paper presents high performance and high reliability BiC-DMOS device development, which act as the driving force de... [more] | ICD2012-23 pp.25-29 |
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