| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 15:50 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Improvement of Sensitivity for Power Cycle Degradation by A New Device Structure Koki Okame, Yuki Yamakita, Shin-ichi Nishizawa, Wataru Saito (Kyushu Univ) |
(To be available after the conference date) [more] | |
| SDM | 2021-06-22 14:40 |
Online | Online | [Invited Lecture]
FET characteristics with 2D channel Hitoshi Wakabayashi (Tokyo Tech)  SDM2021-24 |
MISFETs with 2D channel have been reviewed for advanced CMOS devices, in which TMDC PVD and following sulfurization proc... [more] | SDM2021-24 pp.13-15 |
| ED, SDM, CPM | 2012-05-18 09:00 |
Aichi | VBL, Toyohashi Univ. of Technol. | High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region and Narrow Channel Mesa Masashi Kashiwano, Jun Hirai, Shunsuke Ikeda, Motohiko Fujimatsu, Yasuyuki Miyamoto (TITech) ED2012-26 CPM2012-10 SDM2012-28 |
We fabricated a vertical metal-insulator-semiconductor feld-effect transistor (MISFET) with a heterostructure launcher a... [more] | ED2012-26 CPM2012-10 SDM2012-28 pp.43-48 |
| SDM | 2010-06-22 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42 |
There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] | SDM2010-42 pp.49-54 |
| SDM, ED | 2009-06-25 09:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
InGaAs/InP MISFET with epitaxially grown source Yasuyuki Miyamoto, Toru Kanazawa, Hisashi Saito, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2009-72 SDM2009-67 |
Recently, III-V thin films have been identified as potential candidates for future nMOS channels. High current drivabili... [more] | ED2009-72 SDM2009-67 pp.99-103 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2009-06-19 15:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] | SDM2009-39 pp.71-76 |
[Return to Top Page]