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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-30 11:25 |
Osaka | Osaka City University | Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia)  ED2012-81 CPM2012-138 LQE2012-109 |
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] | ED2012-81 CPM2012-138 LQE2012-109 pp.71-74 |
| OPE, LQE, OCS | 2012-10-25 17:00 |
Miyazaki | Control of Lasing States in Magnetic Bistable Laser Diodes Komei Tazawa, Keishi Uehara, Daisuke Ishizaka, Hiromasa Shimizu (TUAT) OCS2012-57 OPE2012-108 LQE2012-74 |
Semiconductor optical isolator exhibits unidirectional propagation by transversal Kerr effect of ferromagnetic metal. Es... [more] | OCS2012-57 OPE2012-108 LQE2012-74 pp.81-85 |
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| LQE, CPM, EMD, OPE, R | 2012-08-23 14:15 |
Miyagi | Tohoku Univ. | Improvement in reliability of AlGaInAs edge-emitting laser diodes Hiroyuki Ichikawa, Yasuo Yamasaki, Nobuyuki Ikoma (SEI) R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 |
High-speed and high-temperature operations are required for light emitters in optical communication systems. AlGaInAs la... [more] | R2012-27 EMD2012-33 CPM2012-58 OPE2012-65 LQE2012-31 pp.33-36 |
| LQE, CPM, EMD, OPE, R | 2012-08-24 13:35 |
Miyagi | Tohoku Univ. | Fabrication of Narrow Spectral Linewidth Wavelength Tunable Laser Diode with Si Photonic Wire Waveguide Tomohiro Kita, Keita Nemoto, Hirohito Yamada (Tohoku Univ.) R2012-44 EMD2012-50 CPM2012-75 OPE2012-82 LQE2012-48 |
We fabricated the narrow spectral linewidth wavelength tunable laser diodes with Si photonic wire waveguide ring resonat... [more] | R2012-44 EMD2012-50 CPM2012-75 OPE2012-82 LQE2012-48 pp.111-114 |
| OPE, LQE, EMD, CPM, OME (Joint) [detail] |
2012-06-22 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-power Continuous-wave Operation of BeZnCdSe Quantum-well Green Laser Diodes Sumiko Fujisaki, Junichi Kasai (Hitachi CRL), Ryoichi Akimoto (AIST), Shigehisa Tanaka, Shinji Tsuji (Hitachi CRL), Toshifumi Hasama, Hiroshi Ishikawa (AIST) OPE2012-10 LQE2012-14 |
Green laser diodes have been attracting much attention because they would realize novel full-color devices installed in ... [more] | OPE2012-10 LQE2012-14 pp.5-8 |
| OPE, LQE, EMD, CPM, OME (Joint) [detail] |
2012-06-22 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Introduction History of Semiconductor Laser Diodes and Optical Integrated Circuits into NTT's Telecommunication Systems Masao Kawachi (NTT) OPE2012-15 LQE2012-19 |
This talk describes the early R&D efforts of semiconductor laser diodes, silica optical fibers and planar lightwave circ... [more] | OPE2012-15 LQE2012-19 pp.27-32 |
| SDM | 2011-07-04 16:40 |
Aichi | VBL, Nagoya Univ. | Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 |
We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green l... [more] | SDM2011-68 pp.103-108 |
| OPE, R, CPM | 2011-04-22 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Line beam generation by using blue laser diodes Kenichiro Takahashi, Osamu Shimakawa, Tomohiko Kanie, Akira Inoue (Sumitomo Electric) R2011-3 CPM2011-3 OPE2011-3 |
In this paper the authors propose a method to generate a line profile beam. The size of beam is 10μm × 1,000μm and the w... [more] | R2011-3 CPM2011-3 OPE2011-3 pp.11-14 |
| LQE | 2010-12-17 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Growth of large InGaAs single crystals as substrates of 1.3 micron wavelength laser diodes Kyoichi Kinoshita, Shinichi Yoda (JAXA), Hirokatsu Aoki (Furuuchi Chem.), Satoshi Yamamoto (Furuuchi Cem.), Tadatoshi Hosokawa (Furuuchi Che.), Masaaki Matsushima (Furuuchi Chem.), Masakazu Arai (NTT East), Yoshihiro Kawaguchi (NEL), Fumiyoshi Kano (NTT), Yasuhiro Kondo (NEL) LQE2010-123 |
We have succeeded in growing homogeneous InxGa1-xAs (x: 0.10 – 0.13) platy single crystals by the traveling liquid... [more] | LQE2010-123 pp.43-46 |
| LQE | 2010-12-17 16:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-power blue-violet laser diodes with window structure Masao Kawaguchi, Hideki Kasugai, Katsuya Samonji, Hiroyuki Hagino, Kenji Orita, Kazuhiko Yamanaka, Yuri Masaaki, Shinichi Takigawa (Panasonic) LQE2010-127 |
High-power GaN-based laser diodes (LDs) are expected as light-source of various high-power applications. The catastrophi... [more] | LQE2010-127 pp.59-62 |
| LQE | 2010-12-17 17:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN semiconductor lasers for short ultraviolet region Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) LQE2010-128 |
We have demonstrated the room-temperature operations of AlGaN based laser diodes under pulsed-current mode. AlGaN laser ... [more] | LQE2010-128 pp.63-67 |
| LQE, OPE, OCS | 2010-10-28 15:05 |
Fukuoka | Mojiko Retro Town, Minato house | [Invited Talk]
Report on ECOC 2010
-- Optical active devices -- Shinsuke Tanaka (Fujitsu labs.) OCS2010-63 OPE2010-99 LQE2010-72 |
This paper reports on optical active devices presented at ECOC 2010. Technical trends and topics in ECOC 2010 will be de... [more] | OCS2010-63 OPE2010-99 LQE2010-72 pp.51-53 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 17:15 |
Kyoto | 1μm-band widely Superluminescent Diodes and Wavelength Tunable Lasers Hideki Asano, Atsushi Mukai, Junya Yaguchi, Tsuyoshi Ohgoh (Fujifilm Corp.) PN2009-47 OPE2009-185 LQE2009-167 |
We have developed widely 1µm-band superluminescent diodes and wavelength tunable lasers for optical measurements. ... [more] | PN2009-47 OPE2009-185 LQE2009-167 pp.65-69 |
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| OPE | 2009-12-18 17:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of on-chip optical interconnection devices integrated with Si waveguides Kentaro Kobayashi, Kazuya Ohira, Norio Iizuka, Haruhiko Yoshida, Mizunori Ezaki (Toshiba Corp.) OPE2009-170 |
We report on the development of on-chip silicon photonic components for the realization of LSI optical interconnection. ... [more] | OPE2009-170 pp.53-56 |
| LQE | 2009-12-11 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Relationship between Facet Stress and Reliability of Edge-Emitting AlGaInAs Laser Diodes Hiroyuki Ichikawa, Akiko Kumagai, Naoya Kono, Shinji Matsukawa, Chie Fukuda, Keiko Iwai, Nobuyuki Ikoma (Sumitomo Electric Industries, Ltd.) LQE2009-142 |
Although facet stress is one of the important parameters in edge-emitting laser diodes (LDs), the relationship between f... [more] | LQE2009-142 pp.19-23 |
| LQE | 2009-12-11 16:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Lens Integration with 1.3-μm Surface-Emitting Lasers and Photodiodes for Highly Efficient Coupling to Fibers Kazunori Shinoda, Koichiro Adachi, Yong Lee, Takashi Shiota, Shigehisa Tanaka (Hitachi/OITDA), Toshiki Sugawara, Masahiro Aoki (Hitachi), Shinji Tsuji (Hitachi/OITDA) LQE2009-152 |
Highly efficient fiber coupling of a lens-integrated surface-emitting laser and a lens-integrated photodiode was demonst... [more] | LQE2009-152 pp.71-74 |
| ED, LQE, CPM | 2009-11-19 15:45 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Ultraviolet AlGaN based multiple-quantum-well laser diodes Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics) ED2009-141 CPM2009-115 LQE2009-120 |
We have demonstrated the room-temperature operations of AlGaN based multi-quantum-well (MQW) laser diodes under pulsed-c... [more] | ED2009-141 CPM2009-115 LQE2009-120 pp.61-64 |
| OPE, OME | 2009-11-13 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study of optical coupling between Si photonic-wire waveguides and laser diodes on SOI Masahiro Abe (Tohoku Univ.), Satoshi Miyamura, Koji Nakamura (Oki Electric Industry Co., Ltd), Tomohiro Kita, Yasuo Ohtera, Hirohito Yamada (Tohoku Univ.) OME2009-63 OPE2009-158 |
Integration technique of laser diodes or photodiodes on Si substrates with SOI optical waveguides is required for realiz... [more] | OME2009-63 OPE2009-158 pp.55-60 |
| OPE, LQE, OCS | 2009-10-22 09:00 |
Fukuoka | Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application Haisong Jiang, Hany Ayad Bastawrous, Yuichiro Tahara (Kyushu Univ.), Shinji Matsuo (NTT), Kiichi Hamamoto (Kyushu Univ.) OCS2009-41 OPE2009-107 LQE2009-66 |
To realize highly integrated optical memory elements for optical random access memory (RAM) application, common single&#... [more] | OCS2009-41 OPE2009-107 LQE2009-66 pp.1-5 |
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| OFT | 2009-05-28 13:00 |
Shizuoka | Application of violet laser diode for dental treatment Hitoshi Hatayama, Takashi Murakami, Tomonori Kashiwada, Akira Inoue (Sumitomo Electric Industries, Ltd.), Hidetaka Miyazaki, Junji Kato (Tokyo Medical and Dental Univ.) OFT2009-1 |
High power GaN violet laser diode has been recently developed. The wavelength of the violet laser diode (405-nm) is comp... [more] | OFT2009-1 pp.1-6 |
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