IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 57  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2023-12-01
14:50
Shizuoka   Fabrication of vertical AlGaN-based UV-B LD
Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.) ED2023-33 CPM2023-75 LQE2023-73
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] ED2023-33 CPM2023-75 LQE2023-73
pp.84-87
LQE, ED, CPM 2023-12-01
16:15
Shizuoka   The properties of UV-B laser diodes on AlN nanopillars by using wet etching method
Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] ED2023-36 CPM2023-78 LQE2023-76
pp.98-101
SDM 2023-10-13
16:00
Miyagi Niche, Tohoku Univ. Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics
Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology) SDM2023-58
In recent years, Thin film transistors have been widely used as switching devices in flat panel displays, such as liquid... [more] SDM2023-58
pp.27-33
OME 2023-03-16
13:00
Online Online [Invited Talk] Efficient organic photonic devices by making use of triplet excited states
Kenichi Goushi (Kyusyu Univ.) OME2022-81
Organic optoelectronics have attracted significant attention as alternative and complementary technologies of inorganic ... [more] OME2022-81
pp.1-6
MWP 2019-11-27
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Quantum Cascade Lasers for sensing applications
Shinji Saito, Rei Hashimoto, Kei Kaneko, Tsutomu Kakuno (Toshiba Co.), Kazuaki Sakoda (NIMS) MWP2019-45
Quantum cascade lasers (QCLs) are laser devices of generating wide wavelength range from the mid-infrared to the THz ran... [more] MWP2019-45
pp.13-16
LQE, OPE, SIPH 2018-12-06
16:20
Tokyo Keio University [Invited Talk] Watt-class Green and Blue Laser Diodes
Masahiro Murayama, Yusue Nakayama, Yukio Hoshina, Hideki Watanabe, Hidekazu Kawanishi, Takahiro Koyama, Noriyuki Fuutagawa (Sony), Toshiya Uemura (Toyoda Gosei), Katsunori Yanashima (Sony) OPE2018-105 LQE2018-115 SIPH2018-21
We achieved high-power operation using 530-nm green and 465-nm blue laser diodes fabricated on semipolar {20-21} and c-p... [more] OPE2018-105 LQE2018-115 SIPH2018-21
pp.39-42
ED, LQE, CPM 2018-11-30
13:30
Aichi Nagoya Inst. tech. A new method to evaluate the degree of potential fluctuation in InGaN quantum-well laser diodes by optical-pump stimulated-emission measurements
Itsuki Oshima, Yuma Ikeda, Shigeta Sakai, A. A. Yamaguchi (Kanazawa Inst. tec.), Yuya Kanitani, Shigetaka Tomiya (Sony) ED2018-49 CPM2018-83 LQE2018-103
It is well-known that the characteristics of InGaN quantum-well (QW) laser diodes are strongly affected by the potential... [more] ED2018-49 CPM2018-83 LQE2018-103
pp.79-82
OPE, LQE, OCS 2018-10-18
14:35
Saga   OCS2018-34 OPE2018-70 LQE2018-59 Transistor Laser (TL) has multiple modulation methods by a combination of terminal connection because it has three elect... [more] OCS2018-34 OPE2018-70 LQE2018-59
pp.35-40
OPE 2017-12-07
13:15
Okinawa   [Poster Presentation] Etalon-filter-based mode hop detection for wavelength tunable lasers
Masataka Gohara, Takeshi Kuboki, Kazutoshi Kato (Kyushu Univ.) OPE2017-103
At the multi-electrode tunable laser diodes, mode hops appear when we sweep the wavelength with tuning currents. Therefo... [more] OPE2017-103
pp.75-78
LQE, OPE, EMD, R, CPM 2016-08-25
14:25
Hokkaido   [Invited Talk] Recent progress in ultraviolet AlGaN laser diodes
Harumasa Yoshida, Hiroyuki Taketomi, Yuta Aoki, Yasufumi Takagi, Atsushi Sugiyama, Masakazu Kuwabara, Yoji Yamashita, Satoru Okawara, Junya Maeda (Hamamatsu Photonics) R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35
We will talk about the recent progress in ultraviolet (UV) laser diodes (LDs). The watt-class peak output power has been... [more] R2016-26 EMD2016-30 CPM2016-39 OPE2016-60 LQE2016-35
pp.35-40
ED 2015-12-22
10:05
Miyagi RIEC, Tohoku Univ Terahertz Emission and Detection from Double Graphene Layer Heterostructures
Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.) ED2015-103
We report on experimental observation of terahertz emission and detection in a double graphene layer hetero structure wh... [more] ED2015-103
pp.71-76
LQE, OPE 2015-06-19
15:15
Tokyo   Spot-size converter integrated quantum dot laser diodes on GaAs substrate.
Ayahito Uetake, Kazumasa Takabayashi, Tokuharu Kimura, Tsuyoshi Yamamoto (Fujitsu Labs.), Masaomi Yamaguchi, Kan Takada, Keizo Takemasa, Mitsuru Sugawara (QD laser), Yasuhiko Arakawa (Univ. of Tokyo) OPE2015-17 LQE2015-27
Silicon (Si) photonics is a promising technology for compact, large-capacity optical transmitters and receivers. As a li... [more] OPE2015-17 LQE2015-27
pp.35-38
EMD, LQE, OPE, CPM, R 2014-08-21
15:40
Hokkaido Otaru Economy Center [Invited Lecture] Development of 9xx nm high power laser diode bars
Nobuto Kageyama, Takenori Morita, Kousuke Torii, Takehito Nagakura, Motoki Takauji, Junya Maeda, Harumasa Yoshida (Hamamatsu photonics) R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35
We report recently developed 9xx nm high power laser diode bars for pumping solid-state lasers, fiber lasers and direct ... [more] R2014-31 EMD2014-36 CPM2014-51 OPE2014-61 LQE2014-35
pp.45-49
EMD, LQE, OPE, CPM, R 2014-08-22
09:35
Hokkaido Otaru Economy Center [Invited Talk] Current status and future prospect of ultraviolet laser diodes
Harumasa Yoshida, Yuta Aoki, Masakazu Kuwabara, Yoji Yamashita, Kousuke Torii, Atsushi Sugiyama, Takenori Morita (Hamamatsu Photonics) R2014-37 EMD2014-42 CPM2014-57 OPE2014-67 LQE2014-41
We will talk about the current status and the future prospect of ultraviolet laser diodes. The electrically driven laser... [more] R2014-37 EMD2014-42 CPM2014-57 OPE2014-67 LQE2014-41
pp.71-75
EMD, LQE, OPE, CPM, R 2014-08-22
11:10
Hokkaido Otaru Economy Center Realization of GaAs1-xBix laser diodes with low temperature dependence of oscillation wavelength
Takuma Fuyuki, Kenji Yoshida, Ryo Yoshioka, Masahiro Yoshimoto (Kyoto Inst. Tech.) R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44
The coherent epitaxial growth GaAs1-xBix (x = 9.5%) films on GaAs substrate with high optical quality was achieved grown... [more] R2014-40 EMD2014-45 CPM2014-60 OPE2014-70 LQE2014-44
pp.87-90
CPM, ED, SDM 2014-05-29
09:20
Aichi   Development of 760nm DFB-laser diodes for oxygen detection
Hidenori Kitajima, Akira Higuchi, Atsushi Fujihara, Hideyuki Naito, Junya Maeda (HPK) ED2014-32 CPM2014-15 SDM2014-30
Abstract: We developed reliable high-power 760_nm distributed feedback laser diodes (DFB-LDs) for real-time monitoring a... [more] ED2014-32 CPM2014-15 SDM2014-30
pp.69-73
OME 2014-03-04
14:10
Tokyo S3-201, Tokyo Tech. Analysis of Carrier Behavior in Double-Layer Organic Light-Emitting Diodes By Microscopic Electric-Field-Induced Optical Second-Harmonic Generation Measurement
Atsuo Sadakata, Ryota Yano, Dai Taguchi, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Inst. of Tech.) OME2013-94
A novel microscopic electric-field-induced optical second-harmonic generation (EFISHG) measurement system using a radial... [more] OME2013-94
pp.11-16
LQE, OCS, OPE 2013-10-25
09:50
Fukuoka   Fabrication of Narrow Spectral Linewidth Wavelength Tunable Laser Diode with Si Photonic Wire Waveguide
Tomohiro Kita, Keita Nemoto, Hirohito Yamada (Tohoku Univ.) OCS2013-66 OPE2013-112 LQE2013-82
We fabricated the narrow spectral linewidth wavelength tunable laser diodes with Si photonic wire waveguide ring resonat... [more] OCS2013-66 OPE2013-112 LQE2013-82
pp.85-88
OPE, LQE, CPM, EMD, R 2013-08-29
16:30
Hokkaido sun-refre Hakodate [Invited Lecture] Characteristics of Window-Structured 915 nm High Power Laser Diodes
Harumasa Yoshida, Takenori Morita, Takehito Nagakura, Kousuke Torii, Motoki Takauji, Junya Maeda (Hamamatsu Photonics) R2013-42 EMD2013-48 CPM2013-67 OPE2013-71 LQE2013-41
We report the high-power 915-nm broad-area laser diodes with a window structure formed by the impurity-free vacancy diso... [more] R2013-42 EMD2013-48 CPM2013-67 OPE2013-71 LQE2013-41
pp.71-75
LQE, LSJ 2013-05-17
14:40
Ishikawa   Two-mode lasing of wavelength tunable quantum dot laser
Kouichi Akahane, Naokatsu Yamamoto, Atsushi Kanno, Keizo Inagaki, Toshimasa Umezawa, Tetsuya Kawanishi (NICT), Takashi Endo, Yasunori Tomomatsu, Toshio Yamanoi (Koshin Kogaku) LQE2013-11
A two-wavelength emission laser can be used to generate millimeter and terahertz waves by irradiating high speed photodi... [more] LQE2013-11
pp.49-52
 Results 1 - 20 of 57  /  [Next]  
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan