Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, LSJ |
2018-05-25 13:25 |
Fukui |
|
Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16 |
We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] |
LQE2018-16 pp.25-28 |
ED, MW |
2018-01-25 16:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165 |
(To be available after the conference date) [more] |
ED2017-96 MW2017-165 pp.15-18 |
OPE, LQE |
2016-06-17 13:15 |
Tokyo |
|
Fabrication of GaInAsP laser using directly bonded InP/Si Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22 |
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] |
OPE2016-12 LQE2016-22 pp.15-20 |
CPM, OPE, LQE, R, EMD |
2015-08-27 14:15 |
Aomori |
Aomori-Bussankan-Asupamu |
[Invited Talk]
Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 |
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] |
R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36 pp.27-32 |
MW |
2015-05-28 16:30 |
Tokyo |
The Univ. of Electro-Commun. |
Analysis on Broadband Characteristics for Wide-Angle Planar Antenna Akira Saitou, Jin Long, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2015-26 |
Broadband characteristics of wide-angle antennas were analyzed for planar sectorial antennas on a substrate. Electromagn... [more] |
MW2015-26 pp.31-36 |
AP |
2015-04-23 11:20 |
Okinawa |
Ishigaki City |
A study of jig for S-parameter method using microstrip line Part 5
-- Influence on Measured Value by Substrate Edge Connector -- Takayuki Sasamori, Kazuma Endo, Teruo Tobana, Yoji Isota (Akita Prefectural Univ.) AP2015-10 |
Recently, the S-parameter method using a vector network analyzer and a measurement jig instead of a balun has been pro-p... [more] |
AP2015-10 pp.47-50 |
AP (2nd) |
2014-12-19 11:30 |
Kagoshima |
Tanegashima Space Center |
A study of jig for S-parameter method using microstrip line Part 4
-- Influence on Measured Value by Substrate Edge Connector -- Takayuki Sasamori, Kazuma Endo, Teruo Tobana, Yoji Isota (Akita Prefectural Univ.) |
Recently, the S-parameter method using a vector network analyzer and a measurement jig instead of a balun has been pro-p... [more] |
|
OCS, OPE, LQE |
2014-10-31 10:45 |
Nagasaki |
Nagasaki Museum of History and Culture |
Studies of an athermal IQ optical modulator and the integratability on (110) InP substrate Yoshihiro Ogiso, Yasuhiko Nakanishi, Shigeru Kanazawa, Eiichi Yamada, Hiromasa Tanobe, Yasuo Shibata, Masaki Kohtoku (NTT) OCS2014-72 OPE2014-116 LQE2014-90 |
An InP-based athermal in-phase and quadrature optical modulator (IQM) was demonstrated for the first time. A single-RF d... [more] |
OCS2014-72 OPE2014-116 LQE2014-90 pp.159-162 |
OPE, LQE |
2014-06-20 14:00 |
Tokyo |
|
Electro-luminescence obtained from QDs LED grown on wafer bonded InP/Si substrate Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2014-15 LQE2014-20 |
We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence sign... [more] |
OPE2014-15 LQE2014-20 pp.15-18 |
LQE, LSJ |
2014-05-22 14:00 |
Fukui |
|
Wavelength and temperature insensitive InP(110) Mach-Zehnder optical modulator Yoshihiro Ogiso, Masakazu Arai, Eiichi Yamada, Hiromasa Tanobe, Yasuo Shibata, Masaki Kohtoku (NTT) LQE2014-2 |
A Mach-Zehnder optical modulator (MZM) with a novel planar structure was proposed. A single-RF drive push-pull MZM with ... [more] |
LQE2014-2 pp.5-8 |
OPE, LQE, CPM, EMD, R |
2013-08-29 10:45 |
Hokkaido |
sun-refre Hakodate |
Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.) R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 |
Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually g... [more] |
R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31 pp.19-24 |
ED |
2013-08-09 09:00 |
Toyama |
University of Toyama |
MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44 |
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] |
ED2013-44 pp.33-36 |
SDM, ICD |
2013-08-02 16:05 |
Ishikawa |
Kanazawa University |
Input common-mode voltage of the opamp improved wide-area by bulk-control Mamoru Ohsawa, Cong-Kha Pham (UEC) SDM2013-85 ICD2013-67 |
We examine the wide area of the common-mode input voltage range of the op amp that operates at low
power supply voltage... [more] |
SDM2013-85 ICD2013-67 pp.105-110 |
LQE, OPE |
2013-06-21 11:25 |
Tokyo |
|
MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19 |
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] |
OPE2013-9 LQE2013-19 pp.13-18 |
SDM, ED, CPM |
2013-05-17 11:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. |
Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by the Electrochemical process Yusuke Kumazaki, Ryohei Jinbo, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-27 CPM2013-12 SDM2013-34 |
We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using p... [more] |
ED2013-27 CPM2013-12 SDM2013-34 pp.61-64 |
OFT, OPE, OCS (Joint) [detail] |
2013-03-01 10:50 |
Tokyo |
|
An MMI-based Polarization Splitter Using Patterned Metal and Angled Joint Keisuke Kojima (MERL), Satoshi Nishikawa, Eiji Yagyu (Mitsubishi), Wangqing Yuan, Bingnan Wang, Toshiaki Koike-Akino, Kieran Parsons (MERL) OCS2012-106 OFT2012-82 OPE2012-200 |
We have proposed a polarization beam splitter consisting of MMI with angled joint and metal layer made on an InP substra... [more] |
OCS2012-106 OFT2012-82 OPE2012-200 pp.51-55(OCS), pp.71-75(OFT), pp.71-75(OPE) |
SDM, ED |
2013-02-27 17:20 |
Hokkaido |
Hokkaido Univ. |
Field-Assisted Self -Assembly Process of InAs nanowires Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) ED2012-136 SDM2012-165 |
Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been inves... [more] |
ED2012-136 SDM2012-165 pp.43-46 |
ED, SDM |
2010-06-30 15:30 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Fabrication of InP/InGaAs DHBTs with buried SiO2 wires Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2010-69 SDM2010-70 |
In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transist... [more] |
ED2010-69 SDM2010-70 pp.75-79 |
SDM, ED |
2009-02-26 16:55 |
Hokkaido |
Hokkaido Univ. |
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) ED2008-231 SDM2008-223 |
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] |
ED2008-231 SDM2008-223 pp.41-46 |
ED |
2008-12-19 15:55 |
Miyagi |
Tohoku Univ. |
A W-band 10-Gb/s Wavelet Generator Using 0.13-um InP HEMTs for Impulse Radio Systems Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu) ED2008-189 |
A wavelet generator (WG) based on simple impulse radio (IR) architecture has been developed to use for multi-gigabit com... [more] |
ED2008-189 pp.27-32 |