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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 27  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, LSJ 2018-05-25
13:25
Fukui   Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate
Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16
We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] LQE2018-16
pp.25-28
ED, MW 2018-01-25
16:35
Tokyo Kikai-Shinko-Kaikan Bldg. RF performance improvement of InP-based Double-Heterojunction Bipolar Transistors by SiC heat-spreading substrate
Yuta Shiratori, Takuya Hoshi, Minoru Ida, Hideaki Matsuzaki (NTT) ED2017-96 MW2017-165
(To be available after the conference date) [more] ED2017-96 MW2017-165
pp.15-18
OPE, LQE 2016-06-17
13:15
Tokyo   Fabrication of GaInAsP laser using directly bonded InP/Si
Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] OPE2016-12 LQE2016-22
pp.15-20
CPM, OPE, LQE, R, EMD 2015-08-27
14:15
Aomori Aomori-Bussankan-Asupamu [Invited Talk] Heterogeneous Integration Technology Using Fluidic Self Assembly Based on Ga Molten Bumps
Koichi Maezawa, Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Satoshi Yamada, Masayuki Mori (Univ. Toyama) R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
Fluidic Self Assembly (FSA) is a most promising heterogeneous integration technique leading to new applications of semic... [more] R2015-28 EMD2015-36 CPM2015-52 OPE2015-67 LQE2015-36
pp.27-32
MW 2015-05-28
16:30
Tokyo The Univ. of Electro-Commun. Analysis on Broadband Characteristics for Wide-Angle Planar Antenna
Akira Saitou, Jin Long, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2015-26
Broadband characteristics of wide-angle antennas were analyzed for planar sectorial antennas on a substrate. Electromagn... [more] MW2015-26
pp.31-36
AP 2015-04-23
11:20
Okinawa Ishigaki City A study of jig for S-parameter method using microstrip line Part 5 -- Influence on Measured Value by Substrate Edge Connector --
Takayuki Sasamori, Kazuma Endo, Teruo Tobana, Yoji Isota (Akita Prefectural Univ.) AP2015-10
Recently, the S-parameter method using a vector network analyzer and a measurement jig instead of a balun has been pro-p... [more] AP2015-10
pp.47-50
AP
(2nd)
2014-12-19
11:30
Kagoshima Tanegashima Space Center A study of jig for S-parameter method using microstrip line Part 4 -- Influence on Measured Value by Substrate Edge Connector --
Takayuki Sasamori, Kazuma Endo, Teruo Tobana, Yoji Isota (Akita Prefectural Univ.)
Recently, the S-parameter method using a vector network analyzer and a measurement jig instead of a balun has been pro-p... [more]
OCS, OPE, LQE 2014-10-31
10:45
Nagasaki Nagasaki Museum of History and Culture Studies of an athermal IQ optical modulator and the integratability on (110) InP substrate
Yoshihiro Ogiso, Yasuhiko Nakanishi, Shigeru Kanazawa, Eiichi Yamada, Hiromasa Tanobe, Yasuo Shibata, Masaki Kohtoku (NTT) OCS2014-72 OPE2014-116 LQE2014-90
An InP-based athermal in-phase and quadrature optical modulator (IQM) was demonstrated for the first time. A single-RF d... [more] OCS2014-72 OPE2014-116 LQE2014-90
pp.159-162
OPE, LQE 2014-06-20
14:00
Tokyo   Electro-luminescence obtained from QDs LED grown on wafer bonded InP/Si substrate
Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2014-15 LQE2014-20
We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence sign... [more] OPE2014-15 LQE2014-20
pp.15-18
LQE, LSJ 2014-05-22
14:00
Fukui   Wavelength and temperature insensitive InP(110) Mach-Zehnder optical modulator
Yoshihiro Ogiso, Masakazu Arai, Eiichi Yamada, Hiromasa Tanobe, Yasuo Shibata, Masaki Kohtoku (NTT) LQE2014-2
A Mach-Zehnder optical modulator (MZM) with a novel planar structure was proposed. A single-RF drive push-pull MZM with ... [more] LQE2014-2
pp.5-8
OPE, LQE, CPM, EMD, R 2013-08-29
10:45
Hokkaido sun-refre Hakodate Mid-infrared sensors with type-II InAs/GaSb superlattice absorption layers grown on InP substrates
Kohei Miura, Yasuhiro Iguchi (Sumitomo Electric), Yuuichi Kawamura (Osaka Prefecture Univ.) R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31
Type-II InAs/GaSb superlattices (SLs), which are attractive for absorption layers of mid-infrared sensors, are usually g... [more] R2013-32 EMD2013-38 CPM2013-57 OPE2013-61 LQE2013-31
pp.19-24
ED 2013-08-09
09:00
Toyama University of Toyama MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors
Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] ED2013-44
pp.33-36
SDM, ICD 2013-08-02
16:05
Ishikawa Kanazawa University Input common-mode voltage of the opamp improved wide-area by bulk-control
Mamoru Ohsawa, Cong-Kha Pham (UEC) SDM2013-85 ICD2013-67
We examine the wide area of the common-mode input voltage range of the op amp that operates at low
power supply voltage... [more]
SDM2013-85 ICD2013-67
pp.105-110
LQE, OPE 2013-06-21
11:25
Tokyo   MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template
Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] OPE2013-9 LQE2013-19
pp.13-18
SDM, ED, CPM 2013-05-17
11:20
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by the Electrochemical process
Yusuke Kumazaki, Ryohei Jinbo, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2013-27 CPM2013-12 SDM2013-34
We investigated the optical absorption properties of InP porous structures formed by the electrochemical process using p... [more] ED2013-27 CPM2013-12 SDM2013-34
pp.61-64
OFT, OPE, OCS
(Joint) [detail]
2013-03-01
10:50
Tokyo   An MMI-based Polarization Splitter Using Patterned Metal and Angled Joint
Keisuke Kojima (MERL), Satoshi Nishikawa, Eiji Yagyu (Mitsubishi), Wangqing Yuan, Bingnan Wang, Toshiaki Koike-Akino, Kieran Parsons (MERL) OCS2012-106 OFT2012-82 OPE2012-200
We have proposed a polarization beam splitter consisting of MMI with angled joint and metal layer made on an InP substra... [more] OCS2012-106 OFT2012-82 OPE2012-200
pp.51-55(OCS), pp.71-75(OFT), pp.71-75(OPE)
SDM, ED 2013-02-27
17:20
Hokkaido Hokkaido Univ. Field-Assisted Self -Assembly Process of InAs nanowires
Hiroaki Funayama, Tatsuro Watanabe, Kenji Michimata, Takao Waho, Shin Murakami, Kazuhiko Shimomura (Sophia Univ.) ED2012-136 SDM2012-165
Field-assisted self-assembly process (FASA) of InAs and InAs/InP core-shell nanowires onto a Si substrate has been inves... [more] ED2012-136 SDM2012-165
pp.43-46
ED, SDM 2010-06-30
15:30
Tokyo Tokyo Inst. of Tech. Ookayama Campus Fabrication of InP/InGaAs DHBTs with buried SiO2 wires
Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2010-69 SDM2010-70
In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transist... [more] ED2010-69 SDM2010-70
pp.75-79
SDM, ED 2009-02-26
16:55
Hokkaido Hokkaido Univ. RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) ED2008-231 SDM2008-223
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] ED2008-231 SDM2008-223
pp.41-46
ED 2008-12-19
15:55
Miyagi Tohoku Univ. A W-band 10-Gb/s Wavelet Generator Using 0.13-um InP HEMTs for Impulse Radio Systems
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu) ED2008-189
A wavelet generator (WG) based on simple impulse radio (IR) architecture has been developed to use for multi-gigabit com... [more] ED2008-189
pp.27-32
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