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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2014-11-27 13:15 |
Osaka | Emission characteristics of InGaN-MQW structures on m-plane GaN substrates Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical), Atsushi Yamaguchi (Kanazawa Inst. of Tech.)  ED2014-77 CPM2014-134 LQE2014-105 |
We have investigated the optical characteristics of InGaN QWs on m-plane GaN substrates in order to understand the reaso... [more] | ED2014-77 CPM2014-134 LQE2014-105 pp.19-22 |
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| LQE, ED, CPM | 2014-11-27 13:40 |
Osaka | Optical Polarization Properties in non-c-oriented-InGaN Quantum Wells Shigeta Sakai, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Kaori Kurihara, Satoru Nagao (Mitsubishi Chemical) ED2014-78 CPM2014-135 LQE2014-106 |
Optical polarization properties are very important factors for structural design of optoelectronic device using non- c-o... [more] | ED2014-78 CPM2014-135 LQE2014-106 pp.23-26 |
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| LQE, ED, CPM | 2014-11-28 15:10 |
Osaka | Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122 |
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] | ED2014-94 CPM2014-151 LQE2014-122 pp.103-106 |
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| CPM | 2014-09-05 09:55 |
Yamagata | The 100th Anniversary Hall, Yamagata University | Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface Daiki Sato, Tomohiro Nishitani, Takuya Maekawa, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) CPM2014-84 |
The photocathode using Negative Electron Affinity (NEA) surface on a semiconductor has been applied for science technolo... [more] | CPM2014-84 pp.49-54 |
| CPM, LQE, ED | 2013-11-28 14:20 |
Osaka | Investigation on the optimum MQW structure for InGaN/GaN solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2013-70 CPM2013-129 LQE2013-105 |
We have investigated InGaN/GaN MQW solar cells on the relationship between short circuit current and the MQW structure. ... [more] | ED2013-70 CPM2013-129 LQE2013-105 pp.31-34 |
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| ITE-IDY, EID, IEE-EDD | 2013-01-24 15:16 |
Shizuoka | Shizuoka Univ. | Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo) EID2012-21 |
We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quant... [more] | EID2012-21 pp.49-52 |
| ED, LQE, CPM | 2012-11-30 14:30 |
Osaka | Osaka City University | Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114 |
A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy di... [more] | ED2012-86 CPM2012-143 LQE2012-114 pp.97-101 |
| ED, SDM, CPM | 2012-05-17 14:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] | ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
| CPM | 2011-10-26 14:55 |
Fukui | Fukui Univ. | MOVPE growth of n-InAlN/p-InGaN heterojunction with an intermediate In composition range Toru Hotta, Kenichi Sugita, A. G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui) CPM2011-113 |
MOVPE growth of InAlN and InGaN has been studied in order to develop basic technologies for InAlN/InGaN heterostructure ... [more] | CPM2011-113 pp.23-26 |
| CPM | 2011-10-26 15:20 |
Fukui | Fukui Univ. | Anti-corrosive stainless steel separator coated with MOCVD InGaN for polymer electrolyte fuel cell (PEFC) Masanori Shimahashi (Eyetec), Kazuya Matsui (Univ. of Fukui), Koji Okada (Eyetec), Kenichi Sugita (Univ. of Fukui), Hajime Sasaki (Eyetec), Akio Yamamoto (Univ. of Fukui) CPM2011-114 |
This paper reports the application of InGaN films to a polymer electrolyte fuel cells (PEFC) stainless steel (SS) separa... [more] | CPM2011-114 pp.27-30 |
| CPM | 2011-10-27 10:20 |
Fukui | Fukui Univ. | MOVPE growth of InGaN on Si(111) substrates with an intermediate range of In content Akihiro Mihara, Kenichi Sugita, Ashraful G. Bhuiyan, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui), Noriyuki Watanabe, Naoteru Shigekawa (NTT Photonics Labs.) CPM2011-120 |
This paper reports on the MOVPE growth of InxGa1-xN with x up to ~0.49 on AlN/Si(111) substrates. Single-crystalline Inx... [more] | CPM2011-120 pp.55-58 |
| CPM, SDM, ED | 2011-05-19 13:25 |
Aichi | Nagoya Univ. (VBL) | Growth of InGaN nanowires on a (111)Si substrate by RF-MBE Takuya Tabata, Ji-Hyun Paek, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2011-9 CPM2011-16 SDM2011-22 |
InGaN nanowires (NWs) are expected to have a good property with visible long wavelength range. In this study, we attempt... [more] | ED2011-9 CPM2011-16 SDM2011-22 pp.45-48 |
| CPM, SDM, ED | 2011-05-19 15:15 |
Aichi | Nagoya Univ. (VBL) | MOVPE growth of thick InGaN on (1-101)GaN/Si Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26 |
We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] | ED2011-13 CPM2011-20 SDM2011-26 pp.63-66 |
| CPM, LQE, ED | 2010-11-11 14:30 |
Osaka | A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) ED2010-148 CPM2010-114 LQE2010-104 |
A new method to obtain material parameters inversely from measured polarization properties has been developed, and we an... [more] | ED2010-148 CPM2010-114 LQE2010-104 pp.29-32 |
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| CPM, LQE, ED | 2010-11-11 14:55 |
Osaka | Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy
-- Efficiency droop mechanism assessed by SNOM -- Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-149 CPM2010-115 LQE2010-105 |
The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been perf... [more] | ED2010-149 CPM2010-115 LQE2010-105 pp.33-36 |
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| LQE | 2010-05-28 16:30 |
Fukui | Sougou Kenkyuu Tou I, Bunkyo Campus, Univ. of Fukui | High-Efficiency Light-emitting and Receiving Devices using Localized and Propagating Surface Plasmon Koichi Okamoto (Kyoto Univ./JST), Richard Bardoux, Yoichi Kawakami (Kyoto Univ.) LQE2010-15 |
We developed a novel method to enhance the light emission efficiencies and rates of InGaN/GaN quantum wells (QWs) and ot... [more] | LQE2010-15 pp.63-68 |
| ED, SDM | 2010-02-22 14:50 |
Okinawa | Okinawaken-Seinen-Kaikan | MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197 |
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] | ED2009-200 SDM2009-197 pp.23-28 |
| ITE-IDY, EID, IEIJ-SSL, IEE-EDD | 2010-01-28 14:20 |
Fukuoka | Kyusyu Univ. (Chikushi Campus) | Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) |
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an ... [more] | EID2009-55 pp.33-36 |
| ED, LQE, CPM | 2009-11-19 11:15 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Proposal of new growth method for high-quality InN and development on growth of InGaN Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-133 CPM2009-107 LQE2009-112 |
New radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) method, named droplet elimination by radical-beam ir... [more] | ED2009-133 CPM2009-107 LQE2009-112 pp.25-29 |
| ED, LQE, CPM | 2009-11-19 13:05 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | High spatial resolution PL mapping of {11-22} InGaN quantum wells by scanning near-field optical microscope Akio Kaneta, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2009-135 CPM2009-109 LQE2009-114 |
Spatially resolved photoluminescence mapping was performed for c plane and {11-22} InGaN/GaN quantum wells (QWs) by a sc... [more] | ED2009-135 CPM2009-109 LQE2009-114 pp.35-38 |
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