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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2019-11-14
14:45
Okinawa Minami Daido Villa. Tamokuteki Koryu Center A Sturdy about Efficient Design and Optimization of Bias Condition for K-Band GaN Power Amplifier
Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi Electric) MW2019-104
Power Amplifier is required to have both high efficiency and linearity in satellite communication. This paper presents t... [more] MW2019-104
pp.25-28
MW 2018-11-15
11:15
Nagasaki Fukue Cultural Hall Low distortion GaN Power Amplifier with adaptive gate bias control
Takuma Torii, Masatake Hangai, Ryuji Inagaki, Shintaro Shinjo (Mitsubishi electric) MW2018-95
In order to expand communication capability, high PAPR (Peak to Average Power Ratio) signal is used. Therefore power amp... [more] MW2018-95
pp.19-23
VLD, CAS, SIP 2008-06-26
15:45
Hokkaido Hokkaido Univ. A Lateral Unified-CBiCMOS Buffer Circuit for High Speed and Low Energy Based on 0.18μm CMOS/SOI Process
Takashi Hamahata, Satoshi Uto, Toshiro Akino (Kinki Univ.), Kenji Nishi (Kinki Univ. Tech of Collage), Kousei Takehara, Takeharu Etoh (Kinki Univ.) CAS2008-16 VLD2008-29 SIP2008-50
In this paper, we develop a printed circuit board having a discrete device that can drive a CCD chip with 5 nF maximum l... [more] CAS2008-16 VLD2008-29 SIP2008-50
pp.87-92
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