Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2012-01-12 16:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High Power X-band 200W AlGaN/GaN HEMT Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164 |
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] |
ED2011-141 MW2011-164 pp.121-123 |
CPM, LQE, ED |
2010-11-11 16:25 |
Osaka |
|
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] |
ED2010-152 CPM2010-118 LQE2010-108 pp.47-50 |
ED, MW |
2010-01-14 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
AlGaN/GaN HEMT having periodic mesa-gate structure Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] |
ED2009-183 MW2009-166 pp.49-53 |
SDM |
2009-06-19 13:20 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] |
SDM2009-33 pp.39-44 |
MW, ED |
2009-01-16 11:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
Mesa-gate AlGaN/GaN HEMT having nano-width channels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188 |
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] |
ED2008-223 MW2008-188 pp.141-144 |
LQE, ED, CPM |
2008-11-28 16:10 |
Aichi |
Nagoya Institute of Technology |
Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127 |
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] |
ED2008-183 CPM2008-132 LQE2008-127 pp.155-159 |
ED |
2007-11-27 13:30 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] |
ED2007-187 pp.1-5 |
ED |
2007-11-27 17:20 |
Miyagi |
Tohoku Univ. Research Institute of Electrical Communication |
Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure Hiroyuki Handa, Yohei Hosono, Hiroki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2007-195 |
We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emissi... [more] |
ED2007-195 pp.45-50 |
SDM, R, ED |
2007-11-16 14:15 |
Osaka |
|
High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] |
R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
CPM, ED, LQE |
2007-10-12 12:05 |
Fukui |
Fukui Univ. |
Ku-band AlGaN/GaN HEMTs with 50W Output Power Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73 |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] |
ED2007-172 CPM2007-98 LQE2007-73 pp.81-84 |
ED, CPM, LQE |
2006-10-05 13:00 |
Kyoto |
|
X-band AlGaN/GaN HEMT with over 40W Output Power Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) |
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] |
ED2006-152 CPM2006-89 LQE2006-56 pp.1-5 |