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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 31 of 31 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2012-01-12
16:25
Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164
A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
pp.121-123
CPM, LQE, ED 2010-11-11
16:25
Osaka   Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] ED2010-152 CPM2010-118 LQE2010-108
pp.47-50
ED, MW 2010-01-14
10:50
Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN HEMT having periodic mesa-gate structure
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] ED2009-183 MW2009-166
pp.49-53
SDM 2009-06-19
13:20
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] SDM2009-33
pp.39-44
MW, ED 2009-01-16
11:45
Tokyo Kikai-Shinko-Kaikan Bldg Mesa-gate AlGaN/GaN HEMT having nano-width channels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2008-223 MW2008-188
The surrounding field effect was effectively observed in a multi-mesa channel (MMC) using an AlGaN/GaN structure, where ... [more] ED2008-223 MW2008-188
pp.141-144
LQE, ED, CPM 2008-11-28
16:10
Aichi Nagoya Institute of Technology Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors
Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] ED2008-183 CPM2008-132 LQE2008-127
pp.155-159
ED 2007-11-27
13:30
Miyagi Tohoku Univ. Research Institute of Electrical Communication Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] ED2007-187
pp.1-5
ED 2007-11-27
17:20
Miyagi Tohoku Univ. Research Institute of Electrical Communication Emission of terahertz electromagnetic radiation from a 2-dimensional plasmon-resonant emitter of a HEMT structure
Hiroyuki Handa, Yohei Hosono, Hiroki Tsuda, Yahya Moubarak Meziani, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2007-195
We have fabricated the 2D plasmon resonant emitter which contains double grating gate structure and estimated its emissi... [more] ED2007-195
pp.45-50
SDM, R, ED 2007-11-16
14:15
Osaka   High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT
Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] R2007-49 ED2007-182 SDM2007-217
pp.19-22
CPM, ED, LQE 2007-10-12
12:05
Fukui Fukui Univ. Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] ED2007-172 CPM2007-98 LQE2007-73
pp.81-84
ED, CPM, LQE 2006-10-05
13:00
Kyoto   X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.)
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-152 CPM2006-89 LQE2006-56
pp.1-5
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