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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 13:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo)  SDM2023-32 |
In order to elucidate the mechanism of characteristic modulations in HfO$_2$-based ferroelectric capacitors, an in-situ ... [more] | SDM2023-32 pp.19-22 |
| SDM | 2022-10-19 17:20 |
Online | Online | A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due t... [more] | SDM2022-63 pp.38-42 |
| SDM | 2022-01-31 14:15 |
Online | Online | [Invited Talk]
**** Reika Ichihara (Kioxia) SDM2021-70 |
e establish an accurate picture of cycling degradation in HfO2-FeFET based on the dynamics of various charge-trapping re... [more] | SDM2021-70 pp.9-11 |
| SDM | 2021-11-11 14:00 |
Online | Online | [Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) SDM2021-56 |
(To be available after the conference date) [more] | SDM2021-56 pp.19-22 |
| CPM | 2021-10-27 15:10 |
Online | Online | Characterization of HfO2 film for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B Takeyama (Kitami Inst. of Tech.) CPM2021-31 |
In recent years, resistive random access memory has been attracting attention because it can operate faster and consume ... [more] | CPM2021-31 pp.43-45 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| SDM | 2021-10-21 13:50 |
Online | Online | A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] | SDM2021-48 pp.16-19 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| SDM | 2021-01-28 13:05 |
Online | Online | [Invited Talk]
**** Reika Ichihara (Kioxia) SDM2020-49 |
It has been known that charge trapping (Qt) reduces the effect of spontaneous polarization (Ps) in HfO2 based FeFET. Rec... [more] | SDM2020-49 pp.1-2 |
| SDM | 2019-10-23 14:20 |
Miyagi | Niche, Tohoku Univ. | A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-54 |
In this study, we investigated suppression of SiO2 interfacial layer formation by introducing Hf interlayer to realize t... [more] | SDM2019-54 pp.7-10 |
| SDM | 2019-10-23 15:40 |
Miyagi | Niche, Tohoku Univ. | Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2019-56 |
In this study, post metallization annealing (PMA) for the ferroelectric undoped HfO2 deposited on Si(100) was investigat... [more] | SDM2019-56 pp.17-20 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 09:30 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | [Invited Talk]
A study on a ferroelectric transistor memory with ultrathin IGZO channel Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-45 ICD2019-10 |
(To be available after the conference date) [more] | SDM2019-45 ICD2019-10 pp.59-62 |
| SDM | 2019-01-29 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo) SDM2018-82 |
Steep-subthreshold swing (steep-SS) behaviors are observable in recent ferroelectric-gate field-effect transistors (FE-F... [more] | SDM2018-82 pp.5-8 |
| SDM | 2019-01-29 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 |
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] | SDM2018-84 pp.13-16 |
| SDM | 2019-01-29 13:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87 |
We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] | SDM2018-87 pp.27-30 |
| SDM | 2018-10-18 10:20 |
Miyagi | Niche, Tohoku Univ. | Thin film formation of ferroelectric undoped HfO2 on Si(100) by RF magnetron sputtering Min Gee Kim, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.) SDM2018-58 |
In this study, we investigated thin film formation of ferroelectric undoped HfO2 directly deposited on p-Si(100). By po... [more] | SDM2018-58 pp.31-34 |
| SDM | 2018-06-25 16:15 |
Aichi | Nagoya Univ. VBL3F | Concern of Ferroelectric HfO2 Films Brought by Large Coercive Field Shinji Migita, Hiroyuki Ota (AIST), Akira Toriumi (Univ. Tokyo) SDM2018-25 |
Ferroelectric HfO2-based thin films are attractive memory materials for application in LSI. These ferroelectrics have la... [more] | SDM2018-25 pp.43-46 |
| SDM | 2018-01-30 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96 |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] | SDM2017-96 pp.21-24 |
| SDM | 2017-10-25 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.) SDM2017-54 |
The grain growth of a pentacene thin film, which is a well-known p-type organic semiconductor, is sensitive to underneat... [more] | SDM2017-54 pp.25-30 |
| ICD | 2017-04-21 13:25 |
Tokyo | [Invited Lecture]
Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16 |
In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] | ICD2017-16 pp.85-88 |
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