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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT)  ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
|
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| ED | 2015-12-21 13:45 |
Miyagi | RIEC, Tohoku Univ | Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Tsuyoshi Takahashi, Shoichi Shiba, Yasuhiro Nakasha, Taisuke Iwai (Fujitsu Labs.), Takashi Mimura (Fujitsu Labs./NICT) ED2015-92 |
We measured the DC and RF characteristics of InP-based 75-nm-gate In0.52Al0.48As/In0.63Ga0.37As HEMTs at 300, 220, 150, ... [more] | ED2015-92 pp.7-11 |
| MW | 2015-05-29 09:00 |
Tokyo | The Univ. of Electro-Commun. | Design and Evaluation of High-Power High-Efficiency GaN HEMT Amplifier/Rectifier Daisuke Mori, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2015-27 |
A high-efficiency transistor power amplifier can convert RF power into DC power. When the RF power is supplied from an o... [more] | MW2015-27 pp.37-42 |
| ED | 2014-12-22 15:00 |
Miyagi | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] | ED2014-102 pp.21-26 |
|
| MW, ED | 2013-01-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157 |
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] | ED2012-127 MW2012-157 pp.79-84 |
| ED | 2012-12-17 13:50 |
Miyagi | Tohoku University | F-Band Bidirectional Amplifier Using 75-nm InP HEMTs Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2012-95 |
We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-ran... [more] | ED2012-95 pp.11-15 |
| ED, LQE, CPM | 2012-11-29 16:15 |
Osaka | Osaka City University | Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104 |
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] | ED2012-76 CPM2012-133 LQE2012-104 pp.45-50 |
| SDM, ED (Workshop) |
2012-06-29 08:45 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Current Status of GaN Technologies in ETRI Jae Kyoung Mun, Jong-Won Lim, Sang Choon Ko, Seong-il Kim, Eun Soo Nam (ETRI) |
ETRI is established as the national R&D institute of information and communication technology in 1976. ETRI has achieved... [more] | |
| ED | 2011-12-14 13:40 |
Miyagi | Tohoku University | Monte Carlo Simulations of InGaAs/InAs/InGaAs Composite Channel HEMTs
-- Band Structure of Strained InAs and Self-Consistent Analysis of 2DEG -- Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2011-101 |
To achieve high-speed operations of InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is usedas a channel. In t... [more] | ED2011-101 pp.7-12 |
| ED | 2010-12-17 11:15 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | Monte Carlo Simulations of Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2010-168 |
To achieve high-speed operations of InP-based InAlAs/InGaAs HEMTs, an InGaAs/InAs/InGaAs composite layer is used as a ch... [more] | ED2010-168 pp.59-64 |
| ED | 2009-11-29 15:30 |
Osaka | Osaka Science & Technology Center | Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163 |
To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] | ED2009-163 pp.19-23 |
| MW (Workshop) |
2009-08-20 - 2009-08-21 |
Overseas | KMUTNB, Bangkok, Thailand | [Invited Talk]
InP-based IC technologies for over 10 Gbps communications systems Shoji Yamahata, Koichi Murata (NTT) |
The development of high-speed ICs with InP-based high-frequency transistors (HBTs and HEMTs) is driven by applicatitions... [more] | |
| SDM, ED | 2008-07-11 14:50 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] | ED2008-105 SDM2008-124 pp.341-345 |
| ED | 2007-11-27 14:45 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] | ED2007-190 pp.17-21 |
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