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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-11-08
11:20		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66		 A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2018-66
pp.11-16
SDM 2018-01-30
11:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92		 A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] SDM2017-92
pp.5-8
SDM 2017-06-20
16:50		 Tokyo Campus Innovation Center Tokyo Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30		 Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] SDM2017-30
pp.43-48
OME, SDM 2015-04-30
10:00		 Okinawa Oh-hama Nobumoto Memorial Hall [Invited Talk] Formation of high Sn content SiSn films and its band structure -- Aiming for direct-band-gap semiconductor --
Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9		 This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] SDM2015-9 OME2015-9
pp.35-37
SDM 2014-06-19
16:55		 Aichi VBL, Nagoya Univ. [Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60		 Low temperature growth of Ge1－xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] SDM2014-60
pp.91-95
 Results 1 - 5 of 5  /   
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