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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, SDM | 2011-04-15 11:05 |
Saga | AIST Kyushu Center | Role of vacancy annihilation in electrical activation of P implanted in Ge Mohammad Anisuzzaman, Taizoh Sadoh (Kyushu Univ.)  SDM2011-4 OME2011-4 |
Due to the scaling limit faced by Si CMOS technology, much interest is being given on Ge. However, development of the Ge... [more] | SDM2011-4 OME2011-4 pp.13-16 |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-27 15:45 |
Osaka | Osaka Univ. | Fast Optical Power Stabilization using a Germanium Photodiode and a Silicon Variable Optical Attenuator Integrated on a Silicon Photonic Platform Koji Yamada, Tai Tsuchizawa, Toshifumi Watanabe, Hiroyuki Shinojima, Hidetaka Nishi, Rai Kou, Sungbong Park (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Seiichi Itabashi (NTT) PN2010-36 OPE2010-149 LQE2010-134 |
Fast optical power stabilization is demonstrated using a germanium photodiode and a silicon variable optical attenuator ... [more] | PN2010-36 OPE2010-149 LQE2010-134 pp.53-56 |
| SDM, OME | 2010-04-23 11:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4 |
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] | SDM2010-4 OME2010-4 pp.13-17 |
| SDM, OME | 2010-04-23 15:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12 |
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] | SDM2010-12 OME2010-12 pp.53-57 |
| SDM | 2009-06-19 09:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Material properties of Ge - Comparison with Silicon Kohei M. Itoh (Keio Univ.) SDM2009-26 |
This presentation introduces history of germanium and properties of germanium that are different from what is believed t... [more] | SDM2009-26 pp.1-2 |
| SDM | 2009-06-19 10:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface -- Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) SDM2009-27 |
We have performed atomistic modeling of GeO2/Ge interface structure by using newly developed interatomic force-field for... [more] | SDM2009-27 pp.3-8 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| SDM | 2009-06-19 13:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Fermi Level Pinning at Metal/Germanium Interface and its Controllability Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32 |
The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/G... [more] | SDM2009-32 pp.33-38 |
| SDM | 2009-06-19 14:30 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Photoemission Study of Suboxides on GeO2/Ge Structure Formed by Thermal and Low Temperature Processes Hideki Murakami, Yoshikazu Ono, Akio Ohta, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-36 |
The chemical bonding features of ultrathin Ge oxide layers, which were prepared on Ge(100) by wet-chemical treatment, lo... [more] | SDM2009-36 pp.57-60 |
| OME, SDM | 2009-04-24 16:15 |
Saga | AIST Kyushu-center | Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] | SDM2009-5 OME2009-5 pp.19-23 |
| SDM | 2008-12-05 15:50 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation Kosei Osada, Kentaro Shibahara (Hiroshima Univ.) SDM2008-194 |
For ultra-shallow junction formation process, that is indispensable for scaled Si MOSFET fabrication, pre-amorphization ... [more] | SDM2008-194 pp.55-58 |
| SDM, OME | 2008-04-12 11:25 |
Okinawa | Okinawa Seinen Kaikan | Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization Takashi Hagihara, Kaoru Toko, Taizoh Sadoh (Kyushu Univ.) SDM2008-20 OME2008-20 |
Metal-induced lateral crystallization (MILC) of Ge was investigated to realize extremely low-temperature (≦250℃) formati... [more] | SDM2008-20 OME2008-20 pp.101-106 |
| ED | 2007-11-27 13:30 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Research on SiGe/Si HEMT for millimeter-wave band operation Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187 |
We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-... [more] | ED2007-187 pp.1-5 |
| SDM | 2007-06-08 13:35 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Impact of Interface Reactions on Electrical Characteristics of Ge/High-k Devices Koji Kita, Hideyuki Nomura, Sho Suzuki, Toshitake Takahashi, Tomonori Nishimura, Akira Toriumi (Univ.of Tokyo) SDM2007-47 |
The impact of high-k material selection on the electrical characteristics of high-k/Ge MIS capacitors was investigated. ... [more] | SDM2007-47 pp.85-90 |
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