| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2014-12-12 14:15 |
Kyoto | Kyoto University | Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)  EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] | EID2014-26 SDM2014-121 pp.67-71 |
| OCS, OPE, LQE | 2014-10-30 16:20 |
Nagasaki | Nagasaki Museum of History and Culture | A vertically illuminated Germanium Photodiode for 25Gbps multi-mode-fiber optical interconnect Tadashi Okumura, Yuki Wakayama, Yasunobu Matsuoka, Katsuya Oda, Misuzu Sagawa, Takashi Takemoto, Etsuko Nomoto, Hideo Arimoto, Shigehisa Tanaka (Hitachi) OCS2014-65 OPE2014-109 LQE2014-83 |
For a multi mode fiber optical link, a high speed silicon photonics receiver based on a highly alignment tolerant vertic... [more] | OCS2014-65 OPE2014-109 LQE2014-83 pp.123-126 |
| SDM | 2014-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | Process Design of High-k/Ge Gate Stack for Improving Thermal Stability and Interface Properties in Sub-1-nm Regime Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2014-43 |
Suppression of GeOx formation and Ge diffusion into high-k layer is important to develop sub-1-nm EOT metal/high-k gate ... [more] | SDM2014-43 pp.1-5 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| SDM | 2014-06-19 11:25 |
Aichi | VBL, Nagoya Univ. | Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48 |
To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] | SDM2014-48 pp.27-30 |
| SDM, OME | 2014-04-10 15:00 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Influence of electron irradiation on Au-induced crystallization for amorphous Ge/SiO2-substrate Kenta Moto, Shin Sakiyama, Takatsugu Sakai, Kazutoshi Nakashima, Hayato Okamoto, Kenichiro Takakura, Isao Tsunoda (KNCT) SDM2014-5 OME2014-5 |
Au-induced crystallization for amorphous Ge（a-Ge）thin film on insulator is investigated as low-temperature crystallizati... [more] | SDM2014-5 OME2014-5 pp.21-25 |
| SDM, OME | 2014-04-10 15:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators Kaoru Toko, Takashi Suemasu (Univ. of Tsukuba) SDM2014-6 OME2014-6 |
We introduce Al-induced crystallization (AIC), a unique technique controlling the crystal orientation of polycrystalline... [more] | SDM2014-6 OME2014-6 pp.27-29 |
| SDM | 2014-01-29 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side ChoongHyun Lee, Tomonori Nishimura, T Tabata, Cimang Lu, W F Zhang, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo) SDM2013-136 |
We clarified wafer-related origins for electron mobility degradation in Ge n-MOSFETs. High-Ns electron mobility was dram... [more] | SDM2013-136 pp.5-8 |
| OPE | 2013-12-20 13:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | First Princilpes Study of Temperature Dependence of Light Emission from Germanium Yuji Suwa (PETRA/PECST/Hitachi) OPE2013-139 |
Temperature dependence of light emission from germanium is studied based on first-principles calculations for the purpos... [more] | OPE2013-139 pp.7-11 |
| OPE | 2013-12-20 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics and analysis of germanium waveguide photodiode under high voltage driving Kotaro Takeda, Tatsuro Hiraki, Tai Tsuchizawa, Hidetaka Nishi, Rai Kou, Hiroshi Fukuda, Tsuyoshi Yamamoto (NTT), Yasuhiko Ishikawa, Kazumi Wada (Univ. of Tokyo), Koji Yamada (NTT) OPE2013-140 |
We demonstrate a responsivity of germanium photodiode (GePD) with a silicon waveguide in the C- and L-band under high-vo... [more] | OPE2013-140 pp.13-18 |
| SDM | 2013-06-18 09:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] | SDM2013-45 pp.7-11 |
| ITE-MMS, ITE-CE, MRIS [detail] | 2013-01-25 16:40 |
Osaka | Dynamical spin injection into p-type Ge at room temperature Mariko Koike, Eiji Shikoh, Yuichiro Ando, Teruya Shinjo (Osaka Univ.), Shinya Yamada, Kohei Hamaya (Kyusyu Univ.), Masashi Shiraishi (Osaka Univ.) MR2012-43 |
Since germanium (Ge) originally has a relatively-high field-effect-mobility among semiconducting materials and its cryst... [more] | MR2012-43 pp.25-28 |
|
| OPE | 2012-12-21 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Differential Optical Receivers with MSM Ge Photodetectors Makoto Miura, Junichi Fujikata, Masataka Noguchi, Daisuke Okamoto (PETRA), Tsuyoshi Horikawa (AIST), Yasuhiko Arakawa (Univ. of Tokyo) OPE2012-139 |
In order to explore the photonics-electronics convergence technology integrated on silicon (Si) substrate, germanium (Ge... [more] | OPE2012-139 pp.27-31 |
| LQE, CPM, EMD, OPE, R | 2012-08-24 14:00 |
Miyagi | Tohoku Univ. | Silicon-germanium/silicon nano-wire waveguide for energy-saving optical switch and variable optical attenuator Shigeaki Sekiguchi, Lei Zhu, Teruo Kurahashi, Kenichi Kawaguchi, Ken Morito (Fujitsu Labs.) R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49 |
For active optical waveguide devices on silicon (Si)-platform, highly efficient carrier accumulation in the waveguide ... [more] |
R2012-45 EMD2012-51 CPM2012-76 OPE2012-83 LQE2012-49 pp.115-120 |
| SDM | 2012-06-21 10:20 |
Aichi | VBL, Nagoya Univ. | High-mobility Ge MOSFETs with ultrathin GeON gate dielectrics Yuya Minoura, Atsushi Kasuya, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2012-47 |
Germanium has recently attracted much attention as a promising channel material for next generation metal-oxide-semicond... [more] | SDM2012-47 pp.23-26 |
| SDM | 2012-06-21 11:35 |
Aichi | VBL, Nagoya Univ. | Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50 |
We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] | SDM2012-50 pp.37-42 |
| SDM, OME | 2012-04-27 15:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2012-5 OME2012-5 |
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystalliz... [more] | SDM2012-5 OME2012-5 pp.21-26 |
| SDM | 2011-12-16 16:00 |
Nara | NAIST | Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] | SDM2011-145 pp.71-76 |
| SDM | 2011-07-04 11:40 |
Aichi | VBL, Nagoya Univ. | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] | SDM2011-57 pp.41-46 |
| SDM | 2011-07-04 13:40 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-60 |
We have investigated the electrical properties and chemical bonding state of praseodymium (Pr) oxide/Ge and Pr oxide/Pr ... [more] | SDM2011-60 pp.57-62 |
[Return to Top Page]