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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT | 2023-11-10 14:50 |
Tokyo | Hachijomachi-Shokokai (Primary: On-site, Secondary: Online) |
[Invited Talk]
Sophomore Created Straight Radio Listens to Analog AM Wave Broadcast Takashi Ohira (TUT)  WPT2023-29 |
Wireless power transfer systems are going to range from kHz to MHz and even GHz frequencies. Toward the effective develo... [more] | WPT2023-29 p.32 |
| SDM, OME | 2023-04-22 15:00 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Metal induced lateral crystallization of amorphous Ge on insulating substrate Isao Tsunoda, Kenichiro Takakura (NIT, Kumamoto College) SDM2023-15 OME2023-15 |
We have investigated the low-temperature metal induced lateral crystallization of amorphous Ge on insulating substrate. ... [more] | SDM2023-15 OME2023-15 pp.55-58 |
| SDM, OME | 2023-04-22 15:35 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Double gate thin-film transistors on glass substrates Akito Hara, Kaisei Nomura, Akihisa Nagayoshi, Masahide Nitta, Syo Suzuki, Yuto Ito (Tohoku Gakuin Univ.) SDM2023-16 OME2023-16 |
The aim of our research is to realize high performance and functional thin-film transistors (TFTs) on glass substrates. ... [more] | SDM2023-16 OME2023-16 pp.59-62 |
| SDM | 2022-11-11 09:30 |
Online | Online | [Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research) SDM2022-71 |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) ... [more] | SDM2022-71 pp.32-39 |
| OME, SDM | 2022-04-23 10:20 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2 Atsuki Morimoto, Rikuto Abe, Anna Hirai, Towa Hirai, Kenichiro Takakura, Isao Tsunoda (NIT(KOSEN),Kumamoto College) SDM2022-10 OME2022-10 |
We have investigated low temperature solid phase crystallization of amorphous Ge on insulating substrate. High temperatu... [more] | SDM2022-10 OME2022-10 pp.47-50 |
| SDM | 2021-06-22 17:30 |
Online | Online | Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2021-29 |
Ge surface segregation on Al/Ge(111) and Ag/Ge(111) structures by thermal anneal was investigated. Ultrathin Ge formati... [more] | SDM2021-29 pp.27-31 |
| SDM, OME | 2021-04-23 15:10 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) SDM2021-4 OME2021-4 |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | SDM2021-4 OME2021-4 pp.15-18 |
| OME, IEE-DEI | 2021-03-01 13:30 |
Online | Online | [Invited Talk]
Trend for Research and Development on Pb-free Sn-perovskite solar cells Shuzi Hayase (UEC) OME2020-19 |
Certified efficiency of the solar cells consisting of conventional Pb perovskite as the light harvesting layer reached 2... [more] | OME2020-19 pp.1-3 |
| SDM, OME | 2020-04-13 15:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | |
| SDM | 2019-06-21 11:40 |
Aichi | Nagoya Univ. VBL3F | Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27 |
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] | SDM2019-27 pp.11-15 |
| SDM, ED, CPM | 2019-05-16 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9 |
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] | ED2019-11 CPM2019-2 SDM2019-9 pp.5-8 |
| LQE | 2018-02-23 10:35 |
Kanagawa | [Special Invited Talk]
Epitaxial Growth of Ge on Si and Photodetector Applications Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152 |
Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength ran... [more] | LQE2017-152 pp.7-10 |
|
| OME, SDM | 2017-04-20 13:00 |
Kagoshima | Tatsugochou Shougaigakushuu Center | Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1 |
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet ... [more] | SDM2017-1 OME2017-1 pp.1-4 |
| SDM, OME | 2016-04-08 16:00 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) SDM2016-8 OME2016-8 |
We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time ann... [more] | SDM2016-8 OME2016-8 pp.31-34 |
| SDM, OME | 2016-04-08 16:25 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Electrical Characterization of Germanium films Crystallized by Atmospheric Pressure Micro-Thermal-Plasma-Jet Irradiation and Fabrication of High-Performance Thin Film Transistors. Taichi Nakatani, Hiromu Harada, Seiichiro Higashi (Hiroshima Univ.) SDM2016-9 OME2016-9 |
We investigated the electrical properties of the crystalline germanium films crystallized by μ-TPJ irradiation. High spe... [more] | SDM2016-9 OME2016-9 pp.35-38 |
| OFT, OCS, OPE (Joint) [detail] |
2016-02-19 09:00 |
Okinawa | Okinawa Univ. | High-performance Ge-on-Si Near-infrared Photodiodes Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227 |
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by ultrahigh-vacuum che... [more] |
OCS2015-107 OFT2015-62 OPE2015-227 pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE) |
| SDM | 2015-06-19 14:15 |
Aichi | VBL, Nagoya Univ. | Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2015-48 |
Besides low solubility and activation rate of n-type dopant in Ge, Fermi level pinning (FLP) at metal/Ge interface leads... [more] | SDM2015-48 pp.51-55 |
| SDM | 2015-06-19 14:35 |
Aichi | VBL, Nagoya Univ. | Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-49 |
In order to realize high-performance Ge-channel CMOS, it is essential to reduce contact resistance at metal/Ge interface... [more] | SDM2015-49 pp.57-61 |
| SDM | 2015-06-19 16:10 |
Aichi | VBL, Nagoya Univ. | Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] | SDM2015-53 pp.81-86 |
| SDM | 2015-03-02 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165 |
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] | SDM2014-165 pp.17-22 |
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