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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2024-01-16 16:20 |
Online | Online | Photocatalyst using phthalocyanine derivatives and organic thin-film solar cell structure Makoto Karakawa (NanoMaRI, Kanazawa Univ.), Hayate Nozawa, Masahiro Nakano (Kanazawa Univ.), Md. Shahiduzzaman (NanoMaRI, Kanazawa Univ.), Takahiro yamaguchi (Kanazawa Univ.), Tetsuya Taima (NanoMaRI, Kanazawa Univ.)  OME2023-83 |
Among renewable energies, photocatalysts are attracting attention as a clean energy source that utilizes sunlight and ac... [more] | OME2023-83 pp.26-29 |
| TL | 2023-12-23 16:30 |
Online | National Tsing Hua University（Taiwan） (Primary: Online, Secondary: On-site) |
[Invited Talk]
Crafting Golden Prompts for Improving Writing Tools Jason S. Chang (NTHU) |
Over the months in 2023, the World have been captivated by a series of newly- released AI tools which may reshape the l... [more] |
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| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| EE, CPM, OME | 2023-12-08 14:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Study of organic solar cell compared with widegap hole transport layers having different HOMO level Yuki Ichise, Masahiro Morimoto, Shigeki Naka (Toyama Univ.) EE2023-31 CPM2023-87 OME2023-58 |
The light absorption spectrum of the active layer greatly affects the photoelectric conversion characteristics in organi... [more] | EE2023-31 CPM2023-87 OME2023-58 pp.37-40 |
| EE, CPM, OME | 2023-12-09 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Investigation of Deposition Conditions for the Preparation of Soluble Phthalocyanine Thin Films Using Solution Coating Methods Takumi Osuga, Yusuke Nishimura, Dai Taguchi, Takaaki Manaka (Tokyo Tech) EE2023-39 CPM2023-95 OME2023-66 |
In order to improve the orientation of soluble phthalocyanine deposited by coating, we investigated the film formation c... [more] | EE2023-39 CPM2023-95 OME2023-66 pp.77-82 |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| LQE, ED, CPM | 2023-11-30 13:30 |
Shizuoka | Fabrication of GaN HBTs using a quaternary AlGaInN emitter and a GaInN base Masaya Takimoto, Akira Mase, Kojima tomoki, Egawa Takashi, Miyoshi Makoto (Nagoya Inst.Tech.) ED2023-15 CPM2023-57 LQE2023-55 |
Heterojunction bipolar transistors (HBTs) using GaN-based semiconductors are considered to be promising next-generation ... [more] | ED2023-15 CPM2023-57 LQE2023-55 pp.6-10 |
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| LQE, ED, CPM | 2023-11-30 13:55 |
Shizuoka | Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with insulators formed by ALD Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Technol.) ED2023-16 CPM2023-58 LQE2023-56 |
Degradation of electrical characteristics due to etching damage during formation of recess structure has been an issue f... [more] | ED2023-16 CPM2023-58 LQE2023-56 pp.11-14 |
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| LQE, ED, CPM | 2023-11-30 14:55 |
Shizuoka | Two-dimensional characterization of Au/Ni/thin heavily-Mg-doped p-GaN/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy Haruto Yoshimura, Hiroki Imabayashi (Fukui univ.), Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura (Sumitomo Chem.), Hiroshi Ohta, Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Fukui univ.) ED2023-18 CPM2023-60 LQE2023-58 |
We applied scanning internal photoemission microscopy (SIPM) method to clarify the two-dimensional basic characteristics... [more] | ED2023-18 CPM2023-60 LQE2023-58 pp.21-24 |
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| LQE, ED, CPM | 2023-11-30 15:20 |
Shizuoka | Formation of p-type GaN by Mg thermal diffusion and challenges for device applications Yuta Itoh, Hirotaka Watanabe, Manato Deki, Shugo Nitta, Atsushi Tanaka, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2023-19 CPM2023-61 LQE2023-59 |
Establishment of a localized p-type doping technique is essential to realize vertical GaN power devices. However, in Mg ... [more] | ED2023-19 CPM2023-61 LQE2023-59 pp.25-30 |
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| LQE, ED, CPM | 2023-11-30 16:20 |
Shizuoka | Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-21 CPM2023-63 LQE2023-61 |
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] | ED2023-21 CPM2023-63 LQE2023-61 pp.36-39 |
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| LQE, ED, CPM | 2023-11-30 16:45 |
Shizuoka | Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62 |
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] | ED2023-22 CPM2023-64 LQE2023-62 pp.40-43 |
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| LQE, ED, CPM | 2023-11-30 17:10 |
Shizuoka | Device characteristics of GaInN-based photovoltaic cells fabricated on Free-Standing GaN substrate for optical wireless power transmission system Takahiro Fujiawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.) ED2023-23 CPM2023-65 LQE2023-63 |
GaInN-based photovoltaic (PV) devices are highly promising for application to optical wireless power transmission (OWPT)... [more] | ED2023-23 CPM2023-65 LQE2023-63 pp.44-47 |
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| LQE, ED, CPM | 2023-12-01 09:55 |
Shizuoka | Simultaneous microscopic PA/PL line-scan measurements in InGaN-quantum wells on a stripe-core GaN Substrate Syoki Jinno, Atsushi A. Yamaguchi, Keito Mori-Tamamura (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya, Yoshihiro Kudo (Sony Semiconductor Solutions Corp.) ED2023-25 CPM2023-67 LQE2023-65 |
Accurate measurement of internal quantum efficiency (IQE) is necessary for a comprehensive understanding of the electron... [more] | ED2023-25 CPM2023-67 LQE2023-65 pp.52-55 |
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| LQE, ED, CPM | 2023-12-01 10:20 |
Shizuoka | Polarization control of surface emission from c-plane InGaN quantum wells and determination of deformation potential in InGaN alloy materials Keito Mori-Tamamura, Atsushi A. Yamaguchi (Kanazawa Inst. Tech), Tomohiro Makino, Maho Ohara, Tatsushi Hamaguchi, Rintaro Koda (Sony Semiconductor Solutions) ED2023-26 CPM2023-68 LQE2023-66 |
InGaN-quantum-well (QW) based vertical-cavity surface-emitting lasers (VCSELs), which are usually fabricated on the c-pl... [more] | ED2023-26 CPM2023-68 LQE2023-66 pp.56-59 |
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| LQE, ED, CPM | 2023-12-01 16:15 |
Shizuoka | The properties of UV-B laser diodes on AlN nanopillars by using wet etching method Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76 |
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] | ED2023-36 CPM2023-78 LQE2023-76 pp.98-101 |
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| LQE, ED, CPM | 2023-12-01 16:40 |
Shizuoka | Development of Shorter Wavelength 230 nm-Band Far-UVC LEDs and Realization of High Output Power LED Panels Mitsuhiro Muta, Hiroyuki Oogami, Kengo Mouri, Hirokazu Kawashima (Nippon Tungsten), Noritoshi Maeda, Ajmal Khan, Yukio Kashima, Eriko Katsuura, Yuuki Nakamura, Kou Sumishi, Taiga Kirihara (RIKEN), Sachie Fujikawa, Hiroyuki Yaguchi (Saitama Univ), Yasushi Iwaisako (Nippon Tungsten), Hideki Hirayama (RIKEN) ED2023-37 CPM2023-79 LQE2023-77 |
AlGaN-based 230nm-band far-UVC LEDs that is harmless to the human body were developed toward achievements of shorter wav... [more] | ED2023-37 CPM2023-79 LQE2023-77 pp.102-105 |
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| ICM, NS, CQ, NV (Joint) |
2023-11-21 09:30 |
Ehime | Ehime Prefecture Gender Equality Center (Primary: On-site, Secondary: Online) |
Fallback control based false injection attack defense mechanism for managed potential-based routing Tasuku Nagata, Naomi Kuze (Osaka Univ.) NS2023-109 |
Due to the rapid growth of information networks, self-organization is a promising approach for controlling network syst... [more] |
NS2023-109 pp.1-6 |
| PRMU, IPSJ-CVIM, IPSJ-DCC, IPSJ-CGVI | 2023-11-17 14:40 |
Tottori | (Primary: On-site, Secondary: Online) |
Face drawing GAN by Channel Attention and Matrix Product Attention Hideyuki Ogura, Masaaki Ikehara, Shinya Ezumi (Keio univ.) PRMU2023-35 |
(To be available after the conference date) [more] | PRMU2023-35 pp.107-112 |
| MW | 2023-11-16 13:25 |
Okinawa | Nago City Industrial Support Center (Okinawa) (Primary: On-site, Secondary: Online) |
Riemann Pump RF-Power DAC with Novel GaN HEMT Cell Utilizing Charge Reuse Transistor Control Mechanism Yuta Fuchibe, Shuichi Sakata, Yuji Komatsuzaki, Shintaro Shinjo (Mitsubishi Electric Corp) MW2023-129 |
We propose a new circuit topology for multi-bit Riemann Pump (RP) digital-to-analog converters (DACs). The RP-DAC is a D... [more] | MW2023-129 pp.19-22 |
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