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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 14:45 |
Miyagi | [Invited Talk]
Monolithic integrated 300GHz band rectennas with GaAsSb/InGaAs backward diodes Michihiko Suhara, Katsuhiro Usui (TMU), Kiyoto Asakwa (TMCI), Kenichi Kawaguchi, Tsuyoshi Takahashi, Masaru Sato, Naoya Okamoto (Fujitsu)  ED2022-74 MWPTHz2022-45 |
We present a 300-GHz zero-bias detection rectenna using GaAsSb-InGaAs backward diodes (BWDs). The rectenna consists of a... [more] | ED2022-74 MWPTHz2022-45 pp.15-18 |
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| MW, ED | 2017-01-27 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178 |
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] | ED2016-102 MW2016-178 pp.29-33 |
| ED | 2015-12-21 14:35 |
Miyagi | RIEC, Tohoku Univ | Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-94 |
We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to d... [more] | ED2015-94 pp.19-23 |
| ED | 2014-12-23 09:40 |
Miyagi | Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.) ED2014-108 |
(To be available after the conference date) [more] | ED2014-108 pp.57-61 |
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| ED | 2014-08-01 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53 |
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] | ED2014-53 pp.1-6 |
| ED, MW | 2012-01-12 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT) ED2011-130 MW2011-153 |
Because of the significant increase of data traffic, there is now a strong demand for reducing the power consumptions of... [more] | ED2011-130 MW2011-153 pp.63-68 |
| MW, ED | 2011-01-14 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/... [more] | ED2010-190 MW2010-150 pp.81-86 |
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