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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM, ITE-IST [detail] | 2022-08-08 11:45 |
Online | [Invited Talk]
Optimal Cell Structure/Operation Design of 3D Semicircular Split-gate Cells for Ultra-high-density Flash Memory Tetsu Morooka, , , , , , , , , , , , , , , , , , , , , , , , (Kioxia)  SDM2022-36 ICD2022-4 |
Control gate split cell structure for increasing the cell density by foot-print reduction has several challenges such as... [more] | SDM2022-36 ICD2022-4 p.12 |
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| OME | 2022-01-07 14:05 |
Osaka | CENTRAL ELECTRIC CLUB | Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] | OME2021-48 pp.4-8 |
| SDM | 2021-10-21 13:00 |
Online | Online | A study on Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation for non-volatile memory applications Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-46 |
In this study, we investigated Ar/N2-plasma sputtering gas pressure dependence on the LaBxNy insulator formation. The fl... [more] | SDM2021-46 pp.8-11 |
| NS, CQ, ICM, NV (Joint) |
2013-11-14 13:45 |
Nagasaki | Goto Islands | A delivery method for information sharing at a specific spatial area Kazumine Ogura, Yasuhiro Yamasaki, Norihito Fujita (NEC) CQ2013-53 |
Recently, to realize information sharing system in case of a disaster, many researchers have actively investigated DTN(D... [more] | CQ2013-53 pp.13-17 |
| SDM | 2012-06-21 09:40 |
Aichi | VBL, Nagoya Univ. | Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2012-45 |
We have studied electron transfer due to internal photoelectric emission in NiSi-Nanodots(NDs)/Si-Quantum-Dots(Si-QDs) h... [more] | SDM2012-45 pp.13-16 |
| SDM | 2012-06-21 10:00 |
Aichi | VBL, Nagoya Univ. | Nanodot-type Floating Gate Memory with High-density Nanodot Array Formed Utilizing Listeria Dps Hiroki Kamitake, Kosuke Ohara, Mutsunori Uenuma, Bin Zheng, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) SDM2012-46 |
Nanodot-type floating gate memory (NFGM), which has a two dimensional array of nanodots as a floating gate, has attracte... [more] | SDM2012-46 pp.17-21 |
| ED, SDM | 2010-07-02 16:05 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure Moon-Sik Seo (Tohoku Univ.), Tetsuo Endoh (Tohoku Univ./JST) ED2010-101 SDM2010-102 |
Recently, the 3-dimensional vertical Floating Gate (FG) NAND flash memory cell arrays with the extended sidewall control... [more] | ED2010-101 SDM2010-102 pp.225-230 |
| ED, SDM | 2010-07-02 16:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] | ED2010-122 SDM2010-123 pp.319-324 |
| OME | 2010-01-12 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabricatioin and threshold voltage control of organic nonvolatile memory transistors Takashi Nakagawa, Tomoyuki Yokota, Tsuyoshi Sekitani, Ken Takeuchi (Tokyo Univ.), Ute Zschieschang, Hagen Klauk (MPI), Takao Someya (Tokyo Univ.) OME2009-67 |
We have demonstrated to control threshold voltage (Vth) of the organic floating-gate transistors using self-assembled mo... [more] | OME2009-67 pp.7-11 |
| SDM | 2009-06-19 16:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40 |
The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] | SDM2009-40 pp.77-80 |
| SDM, ED | 2008-07-10 09:00 |
Hokkaido | Kaderu２・７ | Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73 |
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] | ED2008-54 SDM2008-73 pp.77-80 |
| SDM | 2008-06-10 14:35 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] | SDM2008-57 pp.89-92 |
| SDM | 2007-06-07 15:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35 |
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] | SDM2007-35 pp.23-26 |
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