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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD, DC, IPSJ-SLDM, CPSY, RECONF, ICD, CPM (Joint) [detail] |
2009-12-04 14:05 |
Kochi | Kochi City Culture-Plaza | Logic stabilization way of open fault with unsuitable logic
-- Aim in simple diagnosis technology -- Masaru Sanada (Koch Univ. of Tech.), Keishi Hashida (Renesas Design), Taiki Yasutomi (Koch Univ. of Tech.)  VLD2009-64 DC2009-51 |
An experiment for stabilization of output logic brought by floating gate fault with unsuitable electric value has been e... [more] | VLD2009-64 DC2009-51 pp.161-166 |
| RECONF | 2009-09-18 15:00 |
Tochigi | Utsunomiya Univ. | A study of an Implementation Method of a Mathematical Function in Reconfigurable Accelerator with High-Precision Floating Point Arithmetic Yuki Yoshioka, Tomoyuki Kawamoto, Taiga Ban, Kazuya Tanigawa, Tetsuo Hironaka (Hiroshima City Univ) RECONF2009-39 |
In recent years, many kinds of scientific application programs require high-precision floating-point operations. For i... [more] |
RECONF2009-39 pp.119-124 |
| SDM | 2009-06-19 16:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40 |
The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] | SDM2009-40 pp.77-80 |
| SDM, ED | 2008-07-10 09:00 |
Hokkaido | Kaderu２・７ | Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Hiroshima Univ.) ED2008-54 SDM2008-73 |
We have studied the formation of Pd-nanodots on SiO2 from ultrathin Pd films being exposed to remote hydrogen plasma at ... [more] | ED2008-54 SDM2008-73 pp.77-80 |
| SDM | 2008-06-10 14:35 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] | SDM2008-57 pp.89-92 |
| SDM | 2007-06-07 15:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35 |
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] | SDM2007-35 pp.23-26 |
| NLP | 2005-01-25 10:15 |
Kagawa | Kagawa Univ. | One-dimentional discrete-time dynamical system circuit with Floating-Gate (FG) MOS peaking current source Tomoumi Yagasaki, Yoshihiko Horio (Tokyo Denki University) |
This paper proposes a one-dimensional discrete-time dynamical systems circuit exploiting the voltagecurrent\ ($V$--$I$) ... [more] | NLP2004-102 pp.17-21 |
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