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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2020-11-19 14:10 |
Online | Online | [Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics Yusuke Noda (Kanazawa Gakuin Univ.)  SDM2020-25 |
The aim of this study is to clarify the relationship between the dielectric constants and other physical and chemical pr... [more] | SDM2020-25 pp.15-20 |
| OME | 2017-12-28 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Investigation of interactions between Pt atom and carbon supports by a first-principles calculation Yuta Nakajo (Tokyo Univ. Science), Teruyasu Mizoguchi (The University of Tokyo), Yasuhito Sugano, Masaru Yoshitake, Yumi Tanaka (Tokyo Univ. Science) OME2017-52 |
To estimate interactions between carbon supports and Pt, which affects the catalytic activity of carbon-supported Pt nan... [more] | OME2017-52 pp.15-18 |
| CPM | 2017-07-21 14:57 |
Hokkaido | Effect of substitution in Ca3Co4O9 on electronic states analyzed by first-principles calculation Daigo Kobayashi (TUT), Satoru Tanibayashi (NIT, Ichinoseki College), Yuichi Nakamura, Hironaga Uchida, Mitsuteru Inoue (TUT) CPM2017-25 |
Layered cobalt oxide Ca3Co4O9 (Co349) is expected to be a good thermoelectric material at high temperature region althou... [more] | CPM2017-25 pp.21-26 |
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| SDM, EID | 2016-12-12 13:30 |
Nara | NAIST | First-Principles Calculation Studies of Resistive Switching Mechanism in Polycrystalline Metal Oxide Film Takumi Moriyama, Sohta Hida (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2016-18 SDM2016-99 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2016-18 SDM2016-99 pp.41-44 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| MRIS, ITE-MMS | 2015-06-04 14:40 |
Miyagi | Tohoku Univ. | First principles study for the effect of spin fluctuation on the crystalline magnetic anisotropy in L10-type ordered alloys Naofumi Kobayashi, Kazushige Hyodo, Akimasa Sakuma (Tohoku Univ.) MR2015-3 |
For the application of high-density magnetic devices, thermal stability of magnetization in materials is one of the key ... [more] | MR2015-3 pp.13-16 |
| SDM, EID | 2014-12-12 17:45 |
Kyoto | Kyoto University | Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM)
-- Analyses of Various NiO Surface States Using Ab Initio Calculations -- Takumi Moriyama (Tottori Univ.), Takahiro Yamasaki, Takahisa Ohno (NIMS), Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) EID2014-39 SDM2014-134 |
For practical use of Resistive Random Access Memory (ReRAM), clarifying physical properties of conducting path created i... [more] | EID2014-39 SDM2014-134 pp.135-138 |
| LQE, ED, CPM | 2014-11-27 16:25 |
Osaka | Relationship between First-Principles Studies and Experimental Results of [(CaFeO3)m/(LaFeO3)n] Superlattices about an Electric and Magnetic Structures and Properties. Takahiro Oikawa, Yuta Watabe, Takaaki Inaba, Keisuke Oshima, Huaping Song, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2014-83 CPM2014-140 LQE2014-111 |
We investigate the crystal structure of CaFeO3, LaFeO3 thin films and the DOS calculation results of [(CaFeO3)1/(LaFeO3)... [more] | ED2014-83 CPM2014-140 LQE2014-111 pp.49-53 |
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| SDM | 2014-11-06 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Recent Progress in Electronic Device Materials Design by Computational Physics Hiroyuki Kageshima (Shimane Univ.) SDM2014-101 |
In the computational physics, the first-principles calculation method is powerful and attractive because it can precisel... [more] | SDM2014-101 pp.31-36 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| CPM, ED, SDM | 2014-05-28 15:35 |
Aichi | First-principles simulation on electron-scattering process in magnetoresistive memory Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.) ED2014-27 CPM2014-10 SDM2014-25 |
Magnetoresistance memory is expected as emerging memory device due to the desired functions such as non-volatility, fast... [more] | ED2014-27 CPM2014-10 SDM2014-25 pp.47-50 |
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| IBISML | 2014-03-06 13:25 |
Nara | Nara Women's University | Simultaneous prediction of multiple physical properties using multi-task learning Tomoaki Iwase (Univ. of Tokyo), Atsuto Seko (Kyoto Univ.), Hisashi Kashima (Univ. of Tokyo) IBISML2013-68 |
We apply several existing techniques and a new model of multi-task learning to the problem of predicting multiple physic... [more] | IBISML2013-68 pp.9-13 |
| SDM | 2012-06-21 13:35 |
Aichi | VBL, Nagoya Univ. | Surface Segregation Behavior of B, Ga, Sb, and As Dopant Atoms on Ge(100) and Ge(111) Examined with a First-principles Method Fumiya Iijima, Kentaro Sawano (TCU), Jiro Ushio (CRL), Takuya Maruizumi, Yasuhiro Shiraki (TCU) SDM2012-52 |
To understand surface segregation behaviour of B, Ga, As, and Sb dopant atoms on Ge (100) and Ge (111) surfaces, the pot... [more] | SDM2012-52 pp.47-51 |
| SDM | 2011-11-11 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121 |
In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculat... [more] | SDM2011-121 pp.33-38 |
| SDM | 2011-07-04 09:20 |
Aichi | VBL, Nagoya Univ. | Structure and formation of epitaxial graphene on SiC(0001) Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51 |
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found... [more] | SDM2011-51 pp.7-10 |
| SDM | 2011-07-04 14:20 |
Aichi | VBL, Nagoya Univ. | Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study Kyosuke Kobinata, Takashi Nakayama (Chiba Univ.) SDM2011-62 |
Schottky-barrier changes by the structural disorders are studied using the first-principles calculations and adopting Au... [more] | SDM2011-62 pp.69-73 |
| CPM, SDM, ED | 2011-05-19 15:40 |
Aichi | Nagoya Univ. (VBL) | MOCVD growth of GaN on graphite substrates Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27 |
We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] | ED2011-14 CPM2011-21 SDM2011-27 pp.67-70 |
| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| SDM | 2009-06-19 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | First-Principles Calculations for Interfacial Reaction during Si Oxidation Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28 |
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] | SDM2009-28 pp.9-13 |
| SDM [detail] | 2008-11-14 16:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] | SDM2008-183 pp.83-88 |
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