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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM, ITE-IST [detail] | 2016-08-03 15:30 |
Osaka | Central Electric Club | Performance Enhancement of Tunnel FET by Negative Capacitance Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo)  SDM2016-68 ICD2016-36 |
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] | SDM2016-68 ICD2016-36 pp.127-130 |
| SDM | 2016-06-29 10:40 |
Tokyo | Campus Innovation Center Tokyo | [Invited Lecture]
Design of SOI-FETs for Steep Slope Switching using Negative Capacitance in Ferroelectric Gate Insulators Hiroyuki Ota, Shinji Migita, Junichi Hattori, Koichi Fukuda (AIST), Akira Toriumi (The Univ. of Tokyo) SDM2016-34 |
This paper discusses a design of fully depleted silicon-on-insulator field-effect transistors with ferroelectric gate in... [more] | SDM2016-34 pp.9-13 |
| OME | 2011-10-14 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-2 | Correlation between FE-TSC and dielectric properties observed in (BEDT-TTF)(TCNQ) crystalline FET Mitsutoshi Hanada, Masatoshi Sakai, Masato Ishiguro (Chiba Univ.), Ryosuke Matsubara (NAIST), Hiroshi Yamauchi (Chiba Univ.), Masakazu Nakamura (NAIST), Kazuhiro Kudo (Chiba Univ.) OME2011-53 |
We have measured thermally stimulated current (TSC) attributed to relaxation of spontaneous polarization induced by poli... [more] | OME2011-53 pp.27-30 |
| ICD | 2010-12-17 10:20 |
Tokyo | RCAST, Univ. of Tokyo | Low Power and Highly Reliable Ferroelectric (Fe)-NAND Flash Memory for Enterprise SSD Teruyoshi Hatanaka, Ryoji Yajima, Shinji Noda (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-118 |
This paper proposes the techniques for highly reliable ferroelectric(Fe)-NAND flash memory. Fe-NAND has the low program/... [more] | ICD2010-118 pp.113-118 |
| OME | 2010-10-22 16:30 |
Tokyo | NTT Musashino R&D Center | Carrier conduction and crystal structure of organic Mott insulator (BEDT-TTF)(TCNQ) Masato Ishiguro, Yuya Ito, Tomoki Takahara, Mitsutoshi Hanada, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2010-54 |
Organic Mott insulator (BEDT-TTF)(TCNQ) is a charge transfer complex composed of bis(ethylenedithio)-tetrathiafulvalene ... [more] | OME2010-54 pp.41-45 |
| ICD, SDM | 2010-08-27 09:25 |
Hokkaido | Sapporo Center for Gender Equality | A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2010-139 ICD2010-54 |
A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe... [more] | SDM2010-139 ICD2010-54 pp.83-88 |
| ICD | 2010-04-22 11:40 |
Kanagawa | Shonan Institute of Tech. | 32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM) Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5 |
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] | ICD2010-5 pp.23-28 |
| OME | 2009-09-03 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Correlation between carrier conduction and dielectric properties of (BEDT-TTF)(TCNQ) crystalline FET around phase transitions Masato Ishiguro, Yuya Ito, Tomoki Takahara, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.) OME2009-39 |
Organic Mott insulator (BEDT-TTF)(TCNQ) is a charge transfer complex composed of BEDT-TTF (donor molecule) and TCNQ (acc... [more] | OME2009-39 pp.19-22 |
| ED | 2009-04-23 15:30 |
Miyagi | Tohoku Univ. | Ferroelectric-Gate Thin-Film-Transistor Memory Using Epitaxially Grown Composite-Oxide-Film Yukihiro Kaneko, Hiroyuki Tanaka, Yoshihisa Kato, Yasuhiro Shimada (Panasonic Corp.) ED2009-5 |
We have developed a ferroelectric-gate thin-film transistor (FeTFT) composed of heteroepitaxially stacked oxide material... [more] | ED2009-5 pp.17-22 |
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