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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2022-11-11 13:00 |
Online | Online | [Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST)  SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] | SDM2022-74 p.49 |
| SDM | 2017-01-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130 |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by us... [more] | SDM2016-130 pp.1-4 |
| ICD, SDM | 2014-08-04 13:05 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | [Invited Talk]
Research progress in steep slope devices and technologies to enhance ON current in TFETs Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36 |
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] | SDM2014-67 ICD2014-36 pp.29-34 |
| ED, MW | 2014-01-16 12:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 |
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] | ED2013-117 MW2013-182 pp.41-45 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| MW, WPT (Joint) |
2012-05-25 09:25 |
Kyoto | Kyoto Univ. | Electron Devices Fabricated On Diamond Film Surface For Application To Hard Electronics Young Yun, Sung-Jo Han, Eui-Hoon Jang, Jang-Hyeon Jeong, Ki-Joon Son (Korea Maritime Univ.) MW2012-13 |
In this paper, basic electrical properties of semiconducting diamond devices were investigated for application to hard e... [more] | MW2012-13 pp.21-22 |
| ED, SDM | 2012-02-07 14:35 |
Hokkaido | KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161 |
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] | ED2011-144 SDM2011-161 pp.13-18 |
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| SDM | 2011-12-16 14:40 |
Nara | NAIST | Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142 |
Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and ... [more] | SDM2011-142 pp.53-58 |
| SDM, ED | 2011-02-24 10:45 |
Hokkaido | Hokkaido Univ. | Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238 |
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] | ED2010-203 SDM2010-238 pp.63-66 |
| SDM, ED | 2011-02-24 11:10 |
Hokkaido | Hokkaido Univ. | Current Intermittency in SOI-FETs under Light Illumination Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-204 SDM2010-239 |
We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-... [more] | ED2010-204 SDM2010-239 pp.67-72 |
| ITE-IDY, EID | 2010-07-23 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Excitation and De-excitaion process in PDP protective layer Kazuma Suesada, Shintaro Miyamoto, Hiroshi Kajiyama (Hiroshima Univ.) EID2010-15 |
Dynamic response of MgO protective layer to VUV irradiationand discharge is investigated by using cathode luminescence (... [more] | EID2010-15 pp.17-20 |
| SDM | 2009-12-04 10:00 |
Nara | NAIST | Changed of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiattion Takunori Nojiri, Hideki Yanagisawa, Yosiko Myojin, Hideharu Matsuura (Osaka Electro-Comm Univ), Takeshi Ohshima (JAEA) SDM2009-153 |
In Al-doped 6H-SiC epilayers irradiated with electrons, the densities and energy levels of acceptor and hole traps were ... [more] | SDM2009-153 pp.11-16 |
| SDM | 2009-10-30 10:00 |
Miyagi | Tohoku University | Computational Simulation for High Performance Protecting Layer of Plasma Displays Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.) SDM2009-125 |
In order to reduce the power requirement of plasma display panel, it is effective to increase the secondary electron emi... [more] | SDM2009-125 pp.39-40 |
| OME | 2008-10-31 15:40 |
Tokyo | ToKyo Univ. Faculty of Engineering Bldg.6 | Electron Spin Resonance of Organic Transistors
-- Microscopic Approach to Carrier Dynamics -- Hiroyuki Matsui (Univ. Tokyo/AIST), Tatsuo Hasegawa (AIST) OME2008-56 |
Field-induced electron spin resonance (ESR) methods are found to be useful in elucidating microscopic carrier dynamics i... [more] | OME2008-56 pp.31-36 |
| SDM | 2008-10-10 15:45 |
Miyagi | Tohoku Univ. | Influence of B and P dopants on SiO2 film characteristics Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166 |
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] | SDM2008-166 pp.63-68 |
| MRIS, ITE-MMS | 2008-10-10 11:05 |
Akita | AIT, Akita Research and Development Center | Fine distribution and fine domain structures in writer pole tips for perpendicular recording heads Kei Hirata (TDK Corp.), Joong Jung Kim (OIST), Yoichi Ishida (TDK Corp.), Hiroto Kasai (Hitachi Ltd.), Daisuke Shindo, Migaku Takahashi (IMRAM, Tohoku Univ.), Akira Tonomura (OIST/Hitachi Ltd.) MR2008-28 |
Observation of in-plane domain structure of writer pole for perpendicular recording head was performed by electron holog... [more] | MR2008-28 pp.55-60 |
| OME | 2007-05-18 13:50 |
Tokyo | Denki-Club | Observation of Electron Injection into Organic Field Effect Transistors with Au Electrodes by Electroluminescence under AC Electric Field Yuki Ohshima, Hideki Kohn, Eunju Lim, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech) OME2007-11 |
The electroluminescence (EL) from tetracene field effect transistor was examined with applying an AC voltage to elucidat... [more] | OME2007-11 pp.11-15 |
| ED, CPM, LQE | 2006-10-06 11:00 |
Kyoto | Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei) |
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phas... [more] | ED2006-164 CPM2006-101 LQE2006-68 pp.69-73 |
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