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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 76 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SCE 2016-04-20
17:00
Tokyo   SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity
Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo) SCE2016-10
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] SCE2016-10
pp.55-60
SDM, OME 2016-04-08
16:00
Okinawa Okinawa Prefectural Museum & Art Museum Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate
Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) SDM2016-8 OME2016-8
We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time ann... [more] SDM2016-8 OME2016-8
pp.31-34
EMD, R 2016-02-19
13:20
Shizuoka Azarea,Shizuoka Investigation of Electrical Contacts on a Nanometer Scale using a Nano-manipulator in Scanning Electron Microscope
Jun Toyoizumi, Masanori Onuma, Takaya Kondo, Kikuo Mori (yazaki), Tetsuo Shimizu, Sumiko Kawabata, Norimichi Watanabe (AIST) R2015-65 EMD2015-93
The indentation using tin oxide film which was deposited on tin substrate was executed by a tungsten probe whose curvatu... [more] R2015-65 EMD2015-93
pp.1-6
EID, ITE-IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] 2016-01-29
11:41
Toyama Toyama Univ. Injection EL Devices Using CuAlS2:Mn Conductive Phosphor Thin Films
Takayoshi Adachi, Shouta Hayashi (Tottori Univ.), Tadashi Ishigaki (TiFREC), Koutoku Ohmi (Tottori Univ.) EID2015-42
Current injection type DC electroluminescent (EL) devices having a polycrystalline CuAlS2:Mn phosphor layer have been pr... [more] EID2015-42
pp.125-128
ED 2015-10-22
14:20
Aichi   Emission characteristics of double-gated field emitter arrays for FEA-HARP image sensor
Yuki Honda, Masakazu Nanba, Kazunori Miyakawa, Misao Kubota (NHK), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Norifumi Egami (Kinki Univ.) ED2015-56
A new simulation model for an electrostatic-focusing field emitter array - high-gain avalanche rushing amorphous photoco... [more] ED2015-56
pp.11-14
ED 2015-10-23
11:00
Aichi   Surface activation process of GaAs photocathode and spectroscopic analysis of its photoemission characteristics
Tomoaki Masuzawa, Keigo Mitsuno, Yoshinori Hatanaka, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.) ED2015-65
Due to the tremendous demands for high-power, coherent THz light generation, electron sources with high operation speed ... [more] ED2015-65
pp.57-59
ED 2015-07-25
11:05
Ishikawa IT Business Plaza Musashi 5F Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer
Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] ED2015-45
pp.45-49
MRIS, ITE-MMS 2015-07-10
15:20
Tokyo Waseda Univ. Fabrication of FePt Nanodot Arrays with High Coercivity by Pulse Electrodeposition
Daiki Nishiie, Siggi Wodarz, Chen Tar Hsieh, Manabu Saito, Junya Abe (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.) MR2015-13
We have been developing the combination process of electrochemical and lithography techniques to fabricate ferromagneti... [more] MR2015-13
pp.25-29
OFT, PEM
(Joint)
2015-05-21
14:25
Ishikawa   Reflowable thermoplastic optical lens module for 10Gbps transmission with 850nm VCSEL
Takayuki Shimazu, Michiko Harumoto, Tomomi Sano (SEI), Takuro Watanabe (NTD), Shohei Okabe, Koji Katayama (SFP), Satoshi Yamazaki, Shinya Nishikawa (SEI) OFT2015-4
The thermoplastic optical lens that made by conventional injection molding method is productivity and cost effective but... [more] OFT2015-4
pp.17-20
AP 2015-05-22
14:25
Nara Naraken Shakai Fukushi Sougou Center (Kashihara City) Multibeam-switching Millimeter-wave Electronic Beam-scanning Antenna using Multiple Microstrip Comb-line Antennas with Beam-tilting Design in Perpendicular Plane to Feeding-line
Kunio Sakakibara, Daiki Nakazawa, Nobuyoshi Kikuma (Nagoya Tech.) AP2015-30
A beam-switching antenna which is composed of some independent antennas with different beam directions is one of the rea... [more] AP2015-30
pp.63-67
ED 2015-04-17
10:55
Miyagi Laboratory for Nanoelectronics and Spintronics SiO-assisted Dolan technique for fabrication of tiny Al tunnel junctions with improved uniformity
Takato Tokuyama, Hiroshi Shimada, Yoshinao Mizugaki (UEC Tokyo/CREST JST) ED2015-13
The Dolan technique has been widely used for mesoscopic device fabrication, in which tiny tunnel junctions are realized ... [more] ED2015-13
pp.65-70
EE 2015-01-30
12:30
Kumamoto Sakura-No-Baba JOSAIEN Study on Technology of Wireless Power Transfer to High Voltage Region with Data Transfer Function
Junki Ishizaki (Doshisha Univ), Toshihiro Kubo, Yoshio Matsubara (Nissin Electric), Yasuhito Takahashi, Koji Fujiwara (Doshisha Univ) EE2014-37
In electron beam processing system and ion implantation devices, since it is necessary to supply electric power to their... [more] EE2014-37
pp.49-53
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2015-01-22
13:38
Kyoto Ryukoku University Improvement of Luminescent properties of Si doing in CuAlS2:Mn conductive thin films
Hideki Kawaguchi, Takayoshi Adachi, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.) EID2014-41
The Si-codoped CuAlS2:Mn thin films have been prepared by EB evaporation using the phosphor powder as evaporation source... [more] EID2014-41
pp.5-8
ED 2014-10-22
09:00
Hokkaido Hokkaido Univ. (Faculty House Trillium) Development of high precision power supply for Field Emission Spectroscopy
Kazuhito Furukawa, Shigeki Kumagai, Hidekazu Murata, Hirotaka Asai, Shuji Kato, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.) ED2014-68
Recently, much attention has been refocused on a nano tip electron source, which exhibits several superior emission char... [more] ED2014-68
pp.29-34
ED 2014-10-22
09:25
Hokkaido Hokkaido Univ. (Faculty House Trillium) Effect of Laser irradiation on Electron Emission from Silicon Field Emitter Arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2014-69
The field emission properties of silicon field emitter arrays with submicron gate aperture have been investigated under ... [more] ED2014-69
pp.35-38
CPM 2014-09-05
09:55
Yamagata The 100th Anniversary Hall, Yamagata University Quantum Efficiency and Life Time of GaN and InGaN with NEA-surface
Daiki Sato, Tomohiro Nishitani, Takuya Maekawa, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) CPM2014-84
The photocathode using Negative Electron Affinity (NEA) surface on a semiconductor has been applied for science technolo... [more] CPM2014-84
pp.49-54
MRIS, ITE-MMS 2014-07-17
13:25
Tokyo Tokyo Institute of Technology Fabrication of ultra-high density nanodot arrays with high coercivity based on analysis of initial deposition process
Hiroki Hagiwara, Siggi Wodarz, Tomohiro Otani, Daiki Nishiie (Waseda Univ.), Giovanni Zangari (UVA), Takayuki Homma (Waseda Univ.) MR2014-9
We have attempted to fabricate ferromagnetic nanodot arrays for bit patterned media (BPM) by using electrochemical proce... [more] MR2014-9
pp.7-10
ED, SDM 2014-02-28
12:05
Hokkaido Hokkaido Univ. Centennial Hall Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration
Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] ED2013-149 SDM2013-164
pp.95-100
EID, ITE-IDY, IEIJ-SSL, IEE-EDD, SID-JC [detail] 2014-01-25
10:12
Niigata Niigata University Luminescent and Electrical Properties of CuAlS2:Mn Conductive Phosphor Thin Films
Yuki Oshima, Hideki Kawaguchi, Koutoku Ohmi (Tottori Univ.) EID2013-24
CuAlS2:Mn phosphor thin films have been prepared by electron-beam (EB) evaporation method . The films are well crystalli... [more] EID2013-24
pp.97-100
CPM, LQE, ED 2013-11-28
15:50
Osaka   Quantum Efficiency of p-GaN with NEA surface for high brightness electron source
Takuya Maekawa, Yoshio Honda, Hiroshi Amano, Tomohiro Nishitani (Nagoya Univ.) ED2013-73 CPM2013-132 LQE2013-108
We report the lifetime and high brightness condition of the NEA GaN surface for the high brightness and durability of th... [more] ED2013-73 CPM2013-132 LQE2013-108
pp.43-46
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