Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-02-21 10:45 |
Tokyo |
Tokyo University-Hongo-Engineering Bldg.4 (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of Superconducting Nb Interconnects for Low-Temperature SoC for Qubit Control Hideaki Numata, Noriyuki Iguchi (NBS), Masamitsu Tanaka (Nagoya Univ.), Koichiro Okamoto, Sadahiko Miura (NBS), Ken Uchida (UTokyo), Hiroki Ishikuro (Keio Univ.), Toshitsugu Sakamoto, Munehiro Tada (NBS) SDM2023-82 |
A 100 nm wide superconducting Nb interconnects were fabricated by a 300-mm wafer process for low temperature SoC applica... [more] |
SDM2023-82 pp.4-8 |
OPE, OCS, LQE |
2022-10-20 16:35 |
Ehime |
(Primary: On-site, Secondary: Online) |
Asymmetric Power Splitter by Using Nano-Pixel Integrated with Sensing High-Mesa Waveguide Yuta Shimamura, Ryota Kuwahata, Kensei Yamauchi, Yunjin Kim (Kyushu Univ.), Tetsuo Tabei (Hiroshima Univ.), Haisong Jiang, Kiichi Hamamoto (Kyushu Univ.) OCS2022-24 OPE2022-70 LQE2022-33 |
Compact breath sensing system using optical integrated circuits have been researched for daily heath-check. In particula... [more] |
OCS2022-24 OPE2022-70 LQE2022-33 pp.40-44 |
PN, EMT, OPE, EST, MWP, LQE, IEE-EMT [detail] |
2019-01-17 11:40 |
Osaka |
Osaka University Nakanoshima Center |
A study of deep dry etching for Photonic Crystal CirD Laser Li Zeng, Shun Mizoguchi, Xiuyu Zhang, Kento Takeuchi, Hirotake Kajii, Masato Morifuji, Akihiro Maruta, Masahiko Kondow (Osaka Univ.) PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 |
In order to fabricate a photonic crystal laser with circular defect (CirD) resonator, we study deep dry etching of GaAs ... [more] |
PN2018-35 EMT2018-69 OPE2018-144 LQE2018-154 EST2018-82 MWP2018-53 pp.23-26 |
SDM |
2015-06-19 09:30 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] |
SDM2015-38 pp.1-4 |
LQE, ED, CPM |
2014-11-27 14:05 |
Osaka |
|
The micro machining process technology of nano imprint and dry etching to improve the efficiency of nitride LED Yukio Kashima, Eriko Matsuura (Marubun), Satoshi Shimatani (TOK), Mitsunori Kokubo, Takaharu Tashiro, Takafumi Ookawa (Toshiba Machine), Ryuichiro Kamimura, Yamato Osada (ULVAC), Sachie Fujikawa, Hideki Hirayama (RIKEN) ED2014-79 CPM2014-136 LQE2014-107 |
We fabricated the photonic crystal in nitride LED and improved the light extraction efficiency. We also introduce the mi... [more] |
ED2014-79 CPM2014-136 LQE2014-107 pp.27-32 |
ED, LQE, CPM |
2012-11-30 11:50 |
Osaka |
Osaka City University |
Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-82 CPM2012-139 LQE2012-110 |
Fabrication processes of a moth-eye patterned sapphire substrate (MPSS), which can enhance a light extraction efficiency... [more] |
ED2012-82 CPM2012-139 LQE2012-110 pp.75-80 |
ED, SDM, CPM |
2012-05-18 09:25 |
Aichi |
VBL, Toyohashi Univ. of Technol. |
Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] |
ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
LQE, ED, CPM |
2011-11-17 13:20 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] |
ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
CPM, LQE, ED |
2010-11-12 10:25 |
Osaka |
|
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111 |
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] |
ED2010-155 CPM2010-121 LQE2010-111 pp.59-62 |
ED |
2010-06-17 14:50 |
Ishikawa |
JAIST |
Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37 |
Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] |
ED2010-37 pp.21-24 |
SDM |
2008-03-14 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Through-silicon Via Interconnection for 3D Integration Using Room-temperature Bonding Naotaka Tanaka, Yasuhiro Yoshimura, Michihiro Kawashita (Hitachi), Toshihide Uematsu, Takahiro Naitoh, Takashi Akazawa (Renesas) SDM2007-277 |
One approach to 3D technology is chip stacking using through-silicon vias (TSVs). Interconnects in a 3D assembly are pot... [more] |
SDM2007-277 pp.21-26 |
OPE |
2007-12-14 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
silicon photonic crystal device fabricated using high-aspect ratio dry etching technique Kazuhiko Hosomi (Hitachi CRL), Hiroji Yamada (OITDA), Shoji Akamatsu (NCRC., Univ. of Tokyo), Misuzu Sagawa (Hitachi CRL), Toshio Katsuyama, Yasuhiko Arakawa (NCRC., Univ. of Tokyo) |
To realize photonic crystal devices with no polarization dependence, we have been developing 1D- and 3D-silicon photonic... [more] |
OPE2007-139 pp.21-26 |
LQE, OPE |
2007-06-29 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Expansion of tuning range in phase controlled tunable wavelength DFB laser Nobuhiro Nunoya, Yasuo Shibata, Hiroyuki Ishii, Hiroshi Okamoto, Yoshihiro Kawaguchi, Yasuhiro Kondo, Hiromi Oohashi (NTT) OPE2007-18 LQE2007-19 |
We have studied how to expand the tuning range in phase controlled tunable wavelength DFB laser. In order to expand a st... [more] |
OPE2007-18 LQE2007-19 pp.11-14 |