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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2018-02-28 17:05 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.)  ED2017-115 SDM2017-115 |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] | ED2017-115 SDM2017-115 pp.51-56 |
| ED, SDM | 2017-02-24 10:25 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices Tokinobu Watanabe (Shizuoka Univ./Univ. Toyama), Hori Masahiro, Ono Yukinori (Shizuoka Univ.) ED2016-131 SDM2016-148 |
Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-... [more] | ED2016-131 SDM2016-148 pp.7-12 |
| SDM | 2017-01-30 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Novel Functional Passive Element for Future Analogue Signal Processing
-- Fabrication and Application of the VO2 Volatile Switch -- Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo) SDM2016-138 |
Electronic devices for internet of things (IoT) need to reconcile high functionality with low cost and simplicity. This ... [more] | SDM2016-138 pp.33-36 |
| SDM | 2016-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] | SDM2016-80 pp.9-14 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| ED, SDM | 2016-03-03 16:20 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132 |
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] | ED2015-125 SDM2015-132 pp.23-26 |
| SDM, ED | 2015-02-05 14:40 |
Hokkaido | Hokkaido Univ. | Accuracy of Time Domain Charge Pumping Tokinobu Watanabe, Masahiro Hori (Univ. of Toyama), Toshiaki Tsuchiya (Shimane Univ.), Yukinori Ono (Univ. of Toyama) ED2014-140 SDM2014-149 |
The charge pumping (CP) is method that is used for analyzing interface defects. The CP method evaluates interface defect... [more] | ED2014-140 SDM2014-149 pp.13-16 |
| SDM | 2007-12-14 16:40 |
Nara | Nara Institute Science and Technology | Charge-Pumping Measurement on 4H-SiC nMOSFETs and pMOSFETs Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Inst. Sci. Tech.) SDM2007-234 |
Charge-pumping measurements were conducted on n-channel and p-channel 4H-SiC MOSFET’s with and without NO annealing. The... [more] | SDM2007-234 pp.51-54 |
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