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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2023-12-22 14:20 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT)  ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] | ED2023-63 MWPTHz2023-73 pp.46-51 |
| NS, RCS (Joint) |
2023-12-15 09:00 |
Fukuoka | Kyushu Institute of Technology Tobata campus, and Online (Primary: On-site, Secondary: Online) |
[Encouragement Talk]
NIC Buffer Design for Congestion Control of TCP in IoT Jun Kanzaki (Kansai Univ.), Nobuhiko Itoh, Hideaki Yoshino (NIT), Miki Yamamoto (Kansai Univ.) NS2023-139 |
UDP that requires lighter process than TCP has been widely deployed due to resource limitations for IoT devices. When s... [more] | NS2023-139 pp.78-83 |
| CPM | 2022-08-04 14:45 |
Hokkaido | Growth and properties of BaTiO3 on GGG substrate with buffer layer(s) Ryu Hasumi, Natsuki Kono, Yuichi Nakamura (TUT) CPM2022-12 |
In our laboratory, we have been working to realize magneto-optical spatial light modulators (MOSLMs) with multiferroic c... [more] | CPM2022-12 pp.3-6 |
|
| OME | 2020-12-25 16:50 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of Tandem Organic Solar Cells Using MgO as a Cathode Buffer Material Formed by a Reaction of MoO3 with Mg Hiroshi Kageyama (Univ. Ryukyus) OME2020-14 |
Effect of magnesium oxide (MgO) cathode buffer layer, which was fabricated by a reaction of molybdenum oxide with therma... [more] | OME2020-14 pp.29-32 |
| CPM | 2017-10-27 15:10 |
Nagano | Shinshu Univ. Nagano-Education Campus, E7 building 3F | Controlling the interface of Cu2ZnSnS4 light absorption layer and II-VI buffer layer Remi Hasuike, Myo Than Htay (Shinshu Univ.), Noritaka Momose (NIT,Nagano Coll.), Kentaro Ito, Yoshio Hashimoto (Shinshu Univ.) CPM2017-71 |
(To be available after the conference date) [more] | CPM2017-71 pp.23-27 |
| AP (2nd) |
2017-01-26 - 2017-01-27 |
Overseas | Malaysia-Japan International Institute of Technology (MJIIT) | Simulation of EM Wave using Buffer-Layered Antenna and Orthogonal MIMO Scheme for Groundwater Detection Fazilla Hasbullah, Idnin Pasya, Mohd Tarmizi Ali (UiTM) |
Exploration of groundwater has been strongly encouraged to minimize dependency on rainwater. Classical ground penetratin... [more] | |
| ED, CPM, SDM | 2015-05-28 15:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Growth and preliminary MOSFETs of corundum-structured oxide semiconductors Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23 |
Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by ... [more] | ED2015-21 CPM2015-6 SDM2015-23 pp.27-30 |
| MW, ED | 2015-01-16 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of traps for GaN HEMT by transient response measurement and TCAD simulation Yutaro Yamaguchi, Takuma Nanjo, Hidetoshi Koyama, Yoshitaka Kamo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga Univ.) ED2014-129 MW2014-193 |
In this paper, we reported the result of analysis of traps at the buffer in GaN HEMT by both transient response measurem... [more] | ED2014-129 MW2014-193 pp.71-76 |
| CPM, LQE, ED | 2013-11-29 11:25 |
Osaka | Annealing in N2-CO of AlN buffer layers on sapphire and high temperature growth of AlN layers by MOVPE Gou Nishio, Shuhei Suzuki, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Hiroyuki Fukuyama (Tohoku Univ.) ED2013-80 CPM2013-139 LQE2013-115 |
AlN has attracted attention for applications in the deep ultraviolet region, because of its wide direct band-gap and exc... [more] | ED2013-80 CPM2013-139 LQE2013-115 pp.75-78 |
|
| OME | 2013-05-16 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Organic Light-Emitting Diodes with Solution-processed Oxide Semiconductor Masaru Takayama, Shigeki Naka, Hiroyuki Okada (Univ. of Toyama) OME2013-27 |
We report on the application of oxide semiconductor film deposited by spin-coating from aqueous solution to the organic ... [more] | OME2013-27 pp.23-27 |
| OME, SDM | 2013-04-25 14:55 |
Kagoshima | Yakusima Environmental Culture Village Center | Influence of LiF Buffer Layer on Performance of Flexible PTB7:PC70BM Bulk Hetero-junction Solar Cells Tatsuki Yanagidate, Masaya Ohzeki, Yuichiro Yanagi, Yuki Arai, Takanori Okukawa, Akira Yoshida (Nihon Univ.), Shunjiro Fujii, Hiromichi Kataura (AIST), Yasushiro Nishioka (Nihon Univ.) SDM2013-6 OME2013-6 |
Bulk hetero-junction solar cells based on [Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo [1,2-b:4,5-b']dithiophene-2,6-diyl][3-f... [more] | SDM2013-6 OME2013-6 pp.25-29 |
| OME | 2012-12-05 16:45 |
Okinawa | Okinawa-seinen-kaikan | Fabrication and Performance of Organic Solar Cells Using MoO3 as a Cathode Buffer Material Eisuke Miyagi, Hiroshi Kageyama (Univ. Ryukyus), Yutaka Ohmori (Osaka Univ.), Yasuhiko Shirota (Fukui Univ. Technol.) OME2012-82 |
The use of MoO3 as a cathode buffer layer inserted between LiF and Al improved the power conversion efficiency (PCE) of ... [more] | OME2012-82 pp.33-35 |
| OME | 2012-11-19 14:15 |
Osaka | Room 302, Nakanoshima Ctr., Osaka Univ. | Impedance spectroscopy analysis of buffer layer insertion at the interface between ITO and organic layer for the improvement of device stability in Alq3 organic light-emitting devices Tomoyuki Oshiro, Masahiro Konishi, Hirotake Kajii (Osaka Univ.), Takeo Otsuka (KANEKA Fundamental Technology Research Alliance Lab.), Yutaka Ohmori (Osaka Univ.) OME2012-69 |
The properties of tris(8-hydroxyquinolinato)aluminum (Alq_3)-based OLEDs without and with a 10-nm-thick 1,4,5,8,9,11-hex... [more] | OME2012-69 pp.39-42 |
| NS, OCS, PN (Joint) |
2012-06-21 11:40 |
Yamagata | Yamagata Univ. | Proposal of optical L2 switch network Kyota Hattori, Masahiro Nakagawa, Naoki Kimishima, Masaru Katayama, Akira Misawa, Atsushi Hiramatsu (NTT) PN2012-3 |
Metro networks need to become more energy-saving and efficient to control traffic from access networks, which will beco... [more] | PN2012-3 pp.13-18 |
| ED, MW | 2012-01-12 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2011-133 MW2011-156 |
In this work, we perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a sho... [more] | ED2011-133 MW2011-156 pp.81-85 |
| EMD, CPM, OME | 2011-06-30 11:15 |
Tokyo | Electrical Property Improvement by Inserting a Buffer Layer in Impurity-Doped ZnO Transparent Electrodes Prepared by Magnetron Sputtering Depositions Jun-ichi Nomoto, Tomoyasu Hirano, Toshihiro Miyata, Tadatsugu Minami (Kanazawa Inst. of Tech.) EMD2011-11 CPM2011-47 OME2011-25 |
Improvements of obtainable lowest resistivity as well as spatial resistivity distribution on the substrate surface in Al... [more] | EMD2011-11 CPM2011-47 OME2011-25 pp.17-21 |
|
| LQE, OPE | 2011-06-30 11:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characterization of near ultra-violet LEDs using single crystal AlN buffer layer Hiroshi Katsuno, Mitsuhiro Kushibe, Kei Kaneko, Shinji Yamada, Yasuo Ohba (Toshiba Corp.) OPE2011-20 LQE2011-20 |
We have developed near-UV LEDs which adopted high-quality GaN growth technique using high-temperature-grown AlN as a buf... [more] | OPE2011-20 LQE2011-20 pp.25-28 |
| NS, ICM, CQ (Joint) |
2010-11-19 13:00 |
Kyoto | Katsura Campus, Kyoto Univ. | Evaluation of Buffer Size for Middleware using Multiple Interface in Wireless Communication Etsuko Miyazaki, Masato Oguchi (Ochanomizu Univ.) NS2010-100 |
Although a variety of wireless interfaces are available on mobile devices, they still provide only low throughput so f... [more] |
NS2010-100 pp.69-74 |
| EMD, OPE, LQE, CPM | 2010-08-27 11:40 |
Hokkaido | Chitose Arcadia Plaza | Numerical Analysis of a Metal-Clad Waveguide Polarizer Junji Yamauchi, Tomohiro Nakano, Hisamatsu Nakano (Hosei Univ.) EMD2010-49 CPM2010-65 OPE2010-74 LQE2010-47 |
We numerically demonstrate two types of metal-clad waveguide polarizers, in which the transmission wave can be selected ... [more] | EMD2010-49 CPM2010-65 OPE2010-74 LQE2010-47 pp.109-114 |
| ED, CPM, SDM | 2009-05-14 15:50 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) ED2009-23 CPM2009-13 SDM2009-13 |
Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from... [more] | ED2009-23 CPM2009-13 SDM2009-13 pp.25-30 |
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