| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, SDM | 2008-05-16 10:50 |
Aichi | Nagoya Institute of Technology | On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)  ED2008-13 CPM2008-21 SDM2008-33 |
This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] | ED2008-13 CPM2008-21 SDM2008-33 pp.61-66 |
| ED, MW | 2008-01-16 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] | ED2007-213 MW2007-144 pp.39-43 |
| CPM, ED, LQE | 2007-10-12 09:00 |
Fukui | Fukui Univ. | Theoretical Study of Multi-Step and Graded Field Plates for AlGaN/GaN HEMTs Ryosuke Sakai, Taketoshi Nishida, Kenji Shiojima, Masaaki Kuzuhara (Fniv. of Fukui) ED2007-165 CPM2007-91 LQE2007-66 |
We have theoretically analyzed the electric field distribution for multi-step and graded Field Plate (FP) AlGaN/GaN HEMT... [more] | ED2007-165 CPM2007-91 LQE2007-66 pp.47-52 |
| EMCJ | 2006-12-15 15:00 |
Aichi | Nagoya Institute of Technology | Examination of the gap length characteristics due to micro gap discharge in voltage bellow 1000V. Ken Kawamata (Hachinohe Inst. of Tech.), Shigeki Minegishi, Akira Haga (Tohoku Gakuin Univ.), Osamu Fujiwara (Nagoya Inst. of Tech.) EMCJ2006-92 |
The voltage and current transition duration due to small gap discharge as the low voltage ESD was investigated in time d... [more] | EMCJ2006-92 pp.65-69 |
| ED, CPM, LQE | 2006-10-05 14:40 |
Kyoto | GaN Vertical Schottky Barrier Diodes with Pseudo-SuperJunction Structures Kazushi Nakazawa, Hiroaki Ueno, Hisayoshi Matsuo, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
Gallium Nitride (GaN) has been widely investigated for future high power devices owing to its high breakdown field with ... [more] | ED2006-156 CPM2006-93 LQE2006-60 pp.23-27 |
|
| EMCJ | 2006-06-12 | Hokkaido | Hokkaido Univ. | Estimation of Gap Breakdown Field Due to Air Discharge through Hand-Held Metal Piece from Charged Human Yoshinori Taka, Osamu Fujiwara (NIT) |
With the high speed and low voltage operation of ICs, serious malfunction of high-tech information devices is known to b... [more] | |
| MW, ED | 2005-01-18 09:20 |
Tokyo | - Masahiro Hikita, Manabu Yanagihara, Kazushi Nakazawa, Hiroaki Ueno, Yutaka Hirose, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric), Takashi Egawa (Nagoya Inst. of Tech.) |
In order to apply an AlGaN/GaN HFET to high power switching applications, both high breakdown voltage and low on-state r... [more] | ED2004-212 MW2004-219 pp.1-5 |
|
[Return to Top Page]