Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2023-12-08 09:50 |
Aichi |
WINC AICHI |
Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] |
ED2023-48 pp.39-42 |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-24 11:10 |
Tottori |
Tottori Univ. |
[Poster Presentation]
Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors. Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) EID2019-16 |
(To be available after the conference date) [more] |
EID2019-16 pp.129-131 |
ED, LQE, CPM |
2018-11-30 11:15 |
Aichi |
Nagoya Inst. tech. |
Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100 |
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] |
ED2018-46 CPM2018-80 LQE2018-100 pp.65-70 |
US |
2015-12-21 16:15 |
Tokyo |
Surugadai Campus, Nihon University |
Fundamental Study on Ultrasonic Welding of Small Machine Components
-- Investigation of shape of Welding Bead -- Masahiko Jin, Takuya Iizuka (NIT) US2015-80 |
Ultrasonic welding method is a kind of metallurgical joining methods capable of joining metals in the solid state. Namel... [more] |
US2015-80 pp.33-36 |
SDM |
2011-07-04 11:40 |
Aichi |
VBL, Nagoya Univ. |
Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] |
SDM2011-57 pp.41-46 |
US |
2009-12-18 15:25 |
Kanagawa |
Suzukakedai Campus, Tokyo Institute of Technology |
Welding Characteristics and Structures of Various Metal Specimens Using Ultrasonic Complex Vibration Welding Systems
-- Ultrasonic Welding of Aluminum, Copper, Nickel and Alumina Coated Aluminum Alloy -- Jiromaru Tsujino (Kanagawa Univ.), Eiichi Sugimoto (Asahi EMS) US2009-84 |
Ultrasonic complex vibration sources and welding equipments with elliptical to circular vibration locus were developed a... [more] |
US2009-84 pp.25-30 |
EMD |
2009-03-06 13:05 |
Tokyo |
Kougakuin Univ. |
Analytical study for copper surface and aluminum oxide films
-- Copper and alminium -- Tatsuya Abe, Osamu Atsumi, Isao Minowa (Tamagawa Univ.) EMD2008-134 |
An analytical study for the structure of oxide film on copper surface and aluminum surface have been performed by both m... [more] |
EMD2008-134 pp.1-4 |
SDM, ED |
2008-07-09 12:05 |
Hokkaido |
Kaderu2・7 |
Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61 |
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] |
ED2008-42 SDM2008-61 pp.15-19 |
OME |
2006-09-25 13:30 |
Hyogo |
University of Hyogo |
Characteristics of organic light-emitting diodes with ITO and high conductive PEDOT:PSS as anode Hideki Maki, Hirotake Kajii, Yutaka Ohmori (Osaka Univ.) |
The fabrication and characteristics of organic light-emitting devices (OLEDs) with multi layered high conductive poly(et... [more] |
OME2006-83 pp.35-38 |