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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2023-12-08
09:50
Aichi WINC AICHI Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties
Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] ED2023-48
pp.39-42
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2020-01-24
11:10
Tottori Tottori Univ. [Poster Presentation] Physical properties of anodized aluminum oxide for low temperature processed IGZO thin-film transistors.
Kono Shuya, Mori Marin, Koretomo Daichi, Furuta Mamoru (KUT) EID2019-16
(To be available after the conference date) [more] EID2019-16
pp.129-131
ED, LQE, CPM 2018-11-30
11:15
Aichi Nagoya Inst. tech. Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method
Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] ED2018-46 CPM2018-80 LQE2018-100
pp.65-70
US 2015-12-21
16:15
Tokyo Surugadai Campus, Nihon University Fundamental Study on Ultrasonic Welding of Small Machine Components -- Investigation of shape of Welding Bead --
Masahiko Jin, Takuya Iizuka (NIT) US2015-80
Ultrasonic welding method is a kind of metallurgical joining methods capable of joining metals in the solid state. Namel... [more] US2015-80
pp.33-36
SDM 2011-07-04
11:40
Aichi VBL, Nagoya Univ. Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure
Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] SDM2011-57
pp.41-46
US 2009-12-18
15:25
Kanagawa Suzukakedai Campus, Tokyo Institute of Technology Welding Characteristics and Structures of Various Metal Specimens Using Ultrasonic Complex Vibration Welding Systems -- Ultrasonic Welding of Aluminum, Copper, Nickel and Alumina Coated Aluminum Alloy --
Jiromaru Tsujino (Kanagawa Univ.), Eiichi Sugimoto (Asahi EMS) US2009-84
Ultrasonic complex vibration sources and welding equipments with elliptical to circular vibration locus were developed a... [more] US2009-84
pp.25-30
EMD 2009-03-06
13:05
Tokyo Kougakuin Univ. Analytical study for copper surface and aluminum oxide films -- Copper and alminium --
Tatsuya Abe, Osamu Atsumi, Isao Minowa (Tamagawa Univ.) EMD2008-134
An analytical study for the structure of oxide film on copper surface and aluminum surface have been performed by both m... [more] EMD2008-134
pp.1-4
SDM, ED 2008-07-09
12:05
Hokkaido Kaderu2・7 Properties of GaN MIS Capacitors Using Al2O3 as Gate Dielectric Deposited by Remote Plasma Atomic Layer Deposition
Hyeong-Seon Yun, Ka-Lam Kim, No-Won Kwak, Woo-Seok Lee, Sang-Hyun Jeong (Cheongju Univ.), Ju-Ok Seo (Itswell), Kwang-Ho Kim (Cheongju Univ.) ED2008-42 SDM2008-61
Al2O3 thin films were deposited on GaN 0001) by Remote Plasma Atomic Layer Deposition (RPALD) technique using Trimethyla... [more] ED2008-42 SDM2008-61
pp.15-19
OME 2006-09-25
13:30
Hyogo University of Hyogo Characteristics of organic light-emitting diodes with ITO and high conductive PEDOT:PSS as anode
Hideki Maki, Hirotake Kajii, Yutaka Ohmori (Osaka Univ.)
The fabrication and characteristics of organic light-emitting devices (OLEDs) with multi layered high conductive poly(et... [more] OME2006-83
pp.35-38
 Results 1 - 9 of 9  /   
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