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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2014-01-17 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric)  ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] | ED2013-124 MW2013-189 pp.79-84 |
| LQE, ED, CPM | 2011-11-17 15:15 |
Kyoto | Katsura Hall，Kyoto Univ. | Analysis of Recovery process in AlGaN/GaN HFET Current Collapse Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105 |
The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] | ED2011-82 CPM2011-131 LQE2011-105 pp.43-48 |
| CPM, SDM, ED | 2011-05-20 16:40 |
Aichi | Nagoya Univ. (VBL) | Current collapse in GaN-based HFETs
-- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate -- Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47 |
We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] | ED2011-34 CPM2011-41 SDM2011-47 pp.175-178 |
| CPM, LQE, ED | 2010-11-12 11:15 |
Osaka | Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] | ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
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| ED | 2010-06-17 14:25 |
Ishikawa | JAIST | Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) ED2010-36 |
(To be available after the conference date) [more] | ED2010-36 pp.17-20 |
| ED | 2010-06-17 14:50 |
Ishikawa | JAIST | Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37 |
Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] | ED2010-37 pp.21-24 |
| ED, LQE, CPM | 2009-11-20 11:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130 |
Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] | ED2009-151 CPM2009-125 LQE2009-130 pp.109-114 |
| ED | 2009-07-30 15:50 |
Osaka | Osaka Univ. Icho-Kaikan | Current Control of Open-Gate AlGaN/GaN HFET via Electrolyte Kenji Nozaki, Yoshiya Takahashi, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ.) ED2009-107 |
(To be available after the conference date) [more] | ED2009-107 pp.29-32 |
| ED | 2009-06-11 16:25 |
Tokyo | Improvement in Device Performance in MIS AlGaN/GaN HFETs by Designing Insulator/AlGaN/GaN Structures Narihiko Maeda, Masanobu Hiroki, Takatomo Enoki (NTT), Takashi Kobayashi (NTT AT) ED2009-42 |
To improve the device performance of GaN-based Metal-Insulator-Semiconductor (MIS) heterostructure field-effect transist... [more] | ED2009-42 pp.31-36 |
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| MW, ED | 2009-01-16 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] | ED2008-220 MW2008-185 pp.125-128 |
| MW | 2008-08-28 14:20 |
Osaka | Osaka-Univ. (Toyonaka) | K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] | MW2008-85 pp.37-40 |
| SDM, ED | 2008-07-09 11:40 |
Hokkaido | Kaderu２・７ | [Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] | ED2008-41 SDM2008-60 pp.9-14 |
| SDM, ED | 2008-07-11 09:25 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91 |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] | ED2008-72 SDM2008-91 pp.171-175 |
| SDM, ED | 2008-07-11 14:20 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122 |
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] | ED2008-103 SDM2008-122 pp.331-335 |
| CPM, ED, LQE | 2007-10-12 09:25 |
Fukui | Fukui Univ. | Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67 |
GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] | ED2007-166 CPM2007-92 LQE2007-67 pp.53-56 |
| ED | 2007-06-16 10:35 |
Toyama | Toyama Univ. | Surface passivation of AlGaN/GaN HFETs by RF magnetron sputtering using AlN target Nariaki Tanaka (JAIST), Yasunobu Sumida (POWDEC), Toshi-kazu Suzuki (JAIST) ED2007-43 |
We have investigated AlN surface passivation for AlGaN/GaN heterojunction field-effect transistors (HFETs). After the ... [more] | ED2007-43 pp.67-70 |
| ED, CPM, LQE | 2006-10-05 15:45 |
Kyoto | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] | ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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| ED, MW | 2006-01-19 13:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] | ED2005-203 MW2005-157 pp.23-27 |
| ED, MW | 2006-01-19 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] | ED2005-205 MW2005-159 pp.35-39 |
| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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