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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.)  ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| LQE, ED, CPM | 2008-11-28 13:30 |
Aichi | Nagoya Institute of Technology | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC) ED2008-177 CPM2008-126 LQE2008-121 |
We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For th... [more] | ED2008-177 CPM2008-126 LQE2008-121 pp.125-130 |
| LQE, ED, CPM | 2008-11-28 16:10 |
Aichi | Nagoya Institute of Technology | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127 |
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] | ED2008-183 CPM2008-132 LQE2008-127 pp.155-159 |
| SDM, ED | 2008-07-11 09:25 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91 |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which ... [more] | ED2008-72 SDM2008-91 pp.171-175 |
| SDM, ED | 2008-07-11 14:50 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124 |
Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] | ED2008-105 SDM2008-124 pp.341-345 |
| ED | 2007-11-27 14:45 |
Miyagi | Tohoku Univ. Research Institute of Electrical Communication | Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) t... [more] | ED2007-190 pp.17-21 |
| ED | 2007-06-16 11:00 |
Toyama | Toyama Univ. | Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current Kazuki Nomoto, Taku Tajima (Hosei Univ.), Tomoyoshi Mishima (Hitachi Cable Ltd.), Masataka Satoh, Tohru Nakamura (Hosei Univ.) ED2007-44 |
We were demonstrated the realization of compatibility of extremely low gate leakage current and low source resistance wi... [more] | ED2007-44 pp.71-74 |
| ED, CPM, LQE | 2006-10-05 14:15 |
Kyoto | Study on crystal growth of AlGaN/GaN HEMT on SiC substrate Takahiko Iwasaki, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.) |
AlGaN/GaN HEMT is a promising candidate for next generation high-power and high-frequency devices. In our study to impro... [more] | ED2006-155 CPM2006-92 LQE2006-59 pp.19-22 |
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